Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
M3D102
BF820W
NPN high-voltage transistor
Product data sheet
Supersedes data of 1997 Sep 03
2003 Sep 09
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NXP Semiconductors Product data sheet
NPN high-voltage transistor BF820W
FEATURES
• Low current (max. 50 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SO T323 plastic package.
MARKING
T YPE NUMBER MARKING CODE
(1)
BF820W 1V*
Notes
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
QUICK REFERENCE DATA
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
3
2
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
C
f
CBO
CEO
CM
tot
FE
re
T
collector-base voltage open emitter − 300 V
collector-emitter voltage open base − 300 V
peak collector current − 100 mA
total power dissipation T
≤ 25 °C − 200 mW
amb
DC current gain IC = 25 mA; VCE = 20 V 50 −
feedback capacitance IC = ic = 0; VCB = 30 V; f = 1 MHz − 1.6 pF
transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 60 − MHz
2003 Sep 09 2
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NXP Semiconductors Product data sheet
NPN high-voltage transistor BF820W
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter − 300 V
collector-emitter voltage open base − 300 V
emitter-base voltage open collector − 5 V
collector current (DC) − 50 mA
peak collector current − 100 mA
peak base current − 50 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 625 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current IE = 0; VCB = 200 V − 10 nA
IE = 0; VCB = 200 V; Tj = 150 °C − 10 µA
I
EBO
h
V
C
f
T
FE
CEsat
re
emitter cut-off current IC = 0; VEB = 5 V − 50 nA
DC current gain IC = 25 mA; VCE = 20 V 50 −
collector-emitter saturation voltage IC = 30 mA; IB = 5 mA; note 1 − 600 mV
feedback capacitance IC = ic = 0; VCB = 30 V; f = 1 MHz − 1.6 pF
transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 60 − MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2003 Sep 09 3
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NXP Semiconductors Product data sheet
3
NPN high-voltage transistor BF820W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT32
D
y
3
A
12
e
b
1
p
e
w M
B
E
H
E
A
1
detail X
AB
Q
c
L
p
X
v M
A
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max
0.1
1
b
cD
p
0.4
0.25
0.10
2.2
1.8
0.3
IEC JEDEC EIAJ
E
1.35
1.15
REFERENCES
1.3
e1H
e
0.65
2.2
2.0
L
Qwv
p
E
0.45
0.15
0.23
0.13
0.20.2
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
UNIT
A
1.1
mm
0.8
OUTLINE
VERSION
SOT323 SC-70
2003 Sep 09 4
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NXP Semiconductors Product data sheet
NPN high-voltage transistor BF820W
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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does not give any representations or warranties,
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
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accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
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may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2003 Sep 09 5
60134) may cause permanent damage to
Page 6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were
made to the content, except for the legal definitions and disclaimers.
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d t o b e a ccur ate a nd re li a ble and may be chan ged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industri al or intellectual property right s.
Printed in The Netherlands 613514/04/pp6 Date of release: 2003 Sep 09 Document order number: 9397 750 11651
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