Page 1
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D087
BF720; BF722
NPN high-voltage transistors
Product data sheet
Supersedes data of 1996 Dec 05
1999 Apr 21
Page 2
NXP Semiconductors Product data sheet
NPN high-voltage transistors BF720; BF722
FEATURES
• Low feedback capacitance.
APPLICATIONS
handbook, halfpage
4
2, 4
• Class-B video output stages of colour television
receivers
1
• General purpose high voltage circuits.
3
DESCRIPTION
NPN transistors in a SOT223 plastic packag e.
complement: BF723.
PNP
123
Top view
MAM287
PINNING
PIN DESCRIPTION
1 base
Fig.1 Simplified outline (SOT223) and symbol.
2, 4 collector
3 emitter
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF720 − 300 V
BF722 − 250 V
V
CEO
collector-emitter voltage open base
BF720 − 300 V
BF722 − 250 V
V
I
I
I
P
T
T
T
EBO
C
CM
BM
tot
stg
j
amb
emitter-base voltage open collector − 5 V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.2 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on printed-circuit board, sin gle sided copper, tinplated, mounting pad for collector
2
cm
.For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
1
Handbook”.
1999 Apr 21 2
Page 3
NXP Semiconductors Product data sheet
NPN high-voltage transistors BF720; BF722
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on printed-circuit board, sin gle sided copper, tinplated, mounting pad for collector 1 cm
For
Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
thermal resistance from junction to ambient note 1 106 K/W
thermal resistance from junction to soldering point note 1 25 K/W
2
other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE = 0; VCB = 200 V − 10 nA
IE = 0; VCB = 200 V; Tj = 150 °C − 10 µA
emitter cut-off current IC = 0; VEB = 5 V − 50 nA
DC current gain IC = 25 mA; VCE = 20 V 50 −
collector-emitter saturation voltage IC = 30 mA; IB = 5 mA − 0.6 V
feedback capacitance IC = ic = 0; VCE = 30 V; f = 1 MHz − 1.6 pF
transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 60 − MHz
.
1999 Apr 21 3
Page 4
NXP Semiconductors Product data sheet
P
3
NPN high-voltage transistors BF720; BF722
PACKAGE OUTLINE
lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22
D
c
y
b
1
E
AB
X
H
E
v
M
A
4
Q
A
A
1
132
e
1
e
b
p
w
M
B
detail X
L
p
0 2 4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A1b
A
0.10
1.8
mm
OUTLINE
VERSION
SOT223 SC-73
1.5
0.01
p
0.80
0.60
IEC JEDEC EIAJ
b
3.1
2.9
1
cD
0.32
6.7
0.22
6.3
e
E
3.7
4.6
3.3
REFERENCES
e1HEL
7.3
2.3
6.7
1.1
0.7
p
Qywv
0.95
0.85
0.1 0.10.2
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
1999 Apr 21 4
Page 5
NXP Semiconductors Product data sheet
NPN high-voltage transistors BF720; BF722
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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General ⎯ Information in this document is believed to be
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does not give any representations or warranties,
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reserves the right to make changes to information
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information supplied prior to the publication hereof.
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
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Export control ⎯ This document as well as the item(s)
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
1999 Apr 21 5
60134) may cause permanent damage to
Page 6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed
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under patent- or other industri al or intellectual property rights.
Printed in The Netherlands 115002/00/03/pp6 Date of release: 1999 Apr 21 Document order number: 9397 750 05699
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