Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D087
BF720; BF722
NPN high-voltage transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 05
Page 2
Philips Semiconductors Product specification
NPN high-voltage transistors BF720; BF722
FEATURES
• Low feedback capacitance.
APPLICATIONS
• Class-B video output stages of colour television
receivers.
• General purpose high voltage circuits.
handbook, halfpage
4
2, 4
DESCRIPTION
NPN transistors in a SOT223 plastic package.
PNP complements: BF721 and BF723.
123
Top view
1
3
MAM287
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
Fig.1 Simplified outline (SOT223) and symbol.
4 collector
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF720 − 300 V
BF722 − 250 V
V
CEO
collector-emitter voltage open base
BF720 − 300 V
BF722 − 250 V
I
P
h
C
f
CM
tot
FE
re
T
peak collector current − 100 mA
total power dissipation T
≤ 25 °C − 1.2 W
amb
DC current gain IC= 25 mA; VCE=20V 50 −
feedback capacitance IC=ic= 0; VCE= 30 V; f = 1 MHz − 1.6 pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 60 − MHz
1996 Dec 05 2
Page 3
Philips Semiconductors Product specification
NPN high-voltage transistors BF720; BF722
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BF720 − 300 V
BF722 − 250 V
collector-emitter voltage open base
BF720 − 300 V
BF722 − 250 V
emitter-base voltage open collector − 5V
collector current (DC) − 50 mA
peak collector current − 100 mA
peak base current − 50 mA
total power dissipation T
≤ 25 °C; note 1 − 1.2 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
"Thermal considerations for SOT223 in the General part of handbook SC04".
2
.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-s
thermal resistance from junction to ambient note 1 106 K/W
thermal resistance from junction to soldering point note 1 25 K/W
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
"Thermal considerations for SOT223 in the General part of handbook SC04".
2
.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
V
C
f
T
FE
CEsat
re
collector cut-off current IE= 0; VCB= 200 V − 10 nA
= 0; VCB= 200 V; Tj= 150 °C − 10 µA
I
E
emitter cut-off current IC= 0; VEB=5V − 50 nA
DC current gain IC= 25 mA; VCE=20V 50 −
collector-emitter saturation voltage IC= 30 mA; IB=5mA − 0.6 V
feedback capacitance IC=ic= 0; VCE=30V; f=1MHz − 1.6 pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 60 − MHz
1996 Dec 05 3
Page 4
Philips Semiconductors Product specification
NPN high-voltage transistors BF720; BF722
PACKAGE OUTLINE
Package description SOT223
D
c
y
b
1
4
132
e
1
b
p
e
w M
B
E
H
E
A
1
detail X
AB
L
X
v M
A
Q
A
p
0 2 4 mm
scale
DIMENSIONS (mm are the original dimensions)
mm
OUTLINE
VERSION
SOT223
1.8
1.5
A
0.10
0.01
p
0.80
0.60
IEC JEDEC EIAJ
b
3.1
2.9
1
cD
0.32
6.7
0.22
6.3
e
E
3.7
4.6
3.3
REFERENCES
e1HELpQywv
2.3
UNIT A1b
1996 Dec 05 4
7.3
6.7
1.1
0.7
0.95
0.85
0.1 0.10.2
EUROPEAN
PROJECTION
ISSUE DATE
96-11-11
Page 5
Philips Semiconductors Product specification
NPN high-voltage transistors BF720; BF722
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Dec 05 5
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