DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D087
BF720; BF722
NPN high-voltage transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 05
Philips Semiconductors Product specification
NPN high-voltage transistors BF720; BF722
FEATURES
• Low feedback capacitance.
APPLICATIONS
• Class-B video output stages of colour television
receivers.
• General purpose high voltage circuits.
handbook, halfpage
4
2, 4
DESCRIPTION
NPN transistors in a SOT223 plastic package.
PNP complements: BF721 and BF723.
123
Top view
1
3
MAM287
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
Fig.1 Simplified outline (SOT223) and symbol.
4 collector
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF720 − 300 V
BF722 − 250 V
V
CEO
collector-emitter voltage open base
BF720 − 300 V
BF722 − 250 V
I
P
h
C
f
CM
tot
FE
re
T
peak collector current − 100 mA
total power dissipation T
≤ 25 °C − 1.2 W
amb
DC current gain IC= 25 mA; VCE=20V 50 −
feedback capacitance IC=ic= 0; VCE= 30 V; f = 1 MHz − 1.6 pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 60 − MHz
1996 Dec 05 2