Philips bf556a_bf556b_bf556c Datasheet

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Page 1

BF556A; BF556B; BF556C

N-channel silicon junction ﬁeld-effect transistors

Rev. 03 — 5 August 2004 Product data sheet

1. Product proﬁle

1.1 General description

N-channel symmetrical silicon junction ﬁeld-effect transistors in a SOT23 package.

CAUTION

MSC895

1.2 Features

■ Low leakage level (typ. 500 fA)

■ High gain

■ Low cut-off voltage.

This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling.

1.3 Applications

■ Impedance converters in e.g. electret microphones and infrared detectors

■ VHF ampliﬁers in oscillators and mixers.

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

GSoff

DSS

tot

 forward transfer

y

drain-source voltage (DC)

gate-source cut-off voltage

drain current VGS=0V; VDS=15V

total power dissipation

admittance

ID= 200 µA; V

=15V

BF556A 3 - 7 mA BF556B 6 - 13 mA BF556C 11 - 18 mA

≤ 25 °C - - 250 mW

amb

VGS=0V; VDS=15V 4.5 - - mS

--±30 V

−0.5 - −7.5 V

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Philips Semiconductors

2. Pinning information

Table 2: Pinning

Pin Description Simpliﬁed outline Symbol

1 source (s) 2 drain (d) 3 gate (g)

3. Ordering information

Table 3: Ordering information

Type number Package

BF556A - plastic surface mounted package; 3 leads SOT23 BF556B BF556C

BF556A; BF556B; BF556C

N-channel silicon junction ﬁeld-effect transistors

SOT23

Name Description Version

d sg

sym054

4. Marking

Table 4: Marking

Type number Marking code

BF556A 24* BF556B 25* BF556C 26*

[1] * = p: made in Hong Kong.

* = t: made in Malaysia. * = W: made in China.

[1]

Product data sheet Rev. 03 — 5 August 2004 2 of 13

Page 3

Philips Semiconductors

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

GSO

GDO

tot

stg

[1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain

lead 10 mm2.

BF556A; BF556B; BF556C

N-channel silicon junction ﬁeld-effect transistors

drain-source voltage (DC) - ±30 V gate-source voltage open drain - −30 V gate-drain voltage (DC) open source - −30 V forward gate current (DC) - 10 mA total power dissipation T

amb

≤ 25 °C storage temperature −65 +150 °C junction temperature - 150 °C

[1]

- 250 mW

Fig 1. Power derating curve.

6. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-a)

thermal resistance from junction to ambient

300

tot

(mW)

200

100

0 15010050

mrc166

(°C)

amb

[1]

500 K/W

[1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain

lead 10 mm2.

Product data sheet Rev. 03 — 5 August 2004 3 of 13

Page 4

Philips Semiconductors

BF556A; BF556B; BF556C

N-channel silicon junction ﬁeld-effect transistors

7. Static characteristics

Table 7: Static characteristics

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

(BR)GSS

GSoff

DSS

GSS

y

gate-source breakdown voltage IG= −1 µA; VDS=0V −30--V gate-source cut-off voltage ID= 200 µA; VDS=15V −0.5 - −7.5 V drain current VGS=0V; VDS=15V

BF556A 3 - 7 mA BF556B 6 - 13 mA BF556C 11 - 18 mA

gate-source leakage current VGS= −20 V; VDS=0V - −0.5 −5000 pA

 forward transfer admittance VGS=0V; VDS=15V 4.5 - - mS

 common source output

admittance

VGS=0V; VDS=15V - 40 - µS

Product data sheet Rev. 03 — 5 August 2004 4 of 13

Page 5

Philips Semiconductors

BF556A; BF556B; BF556C

N-channel silicon junction ﬁeld-effect transistors

8. Dynamic characteristics

Table 8: Dynamic characteristics

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

iss

rss

input capacitance VDS=15V; f=1MHz

= −10 V - 1.7 - pF

=0V - 3 - pF

reverse transfer capacitance VDS=15V; f=1MHz

= −10 V - 0.8 - pF

= 0 V - 0.9 - pF

common source input conductance

VDS=10V; ID=1mA

f = 100 MHz - 15 - µS f = 450 MHz - 300 - µS

common source transfer conductance

VDS=10V; ID=1mA

f = 100 MHz - 2 - mS f = 450 MHz - 1.8 - mS

common source reverse conductance

VDS=10V; ID=1mA - −6- µS

f = 100 MHz - −6- µS f = 450 MHz - −40 - µS

common source output conductance

VDS=10V; ID=1mA

f = 100 MHz - 30 - µS f = 450 MHz - 60 - µS

equivalent input noise voltage VDS=10V; ID= 1 mA;

f = 100 Hz

- 40 - nV/√Hz

GSoff

mrc154

(V)

(mS)

08624

Fig 3. Forward transfer admittance as a function of

gate-source cut-off voltage; typical values.

DSS

(mA)

08624

VDS=15V. VDS=15V; ID=1µA.

Fig 2. Drain current as a function of gate-source

cut-off voltage; typical values.

Product data sheet Rev. 03 — 5 August 2004 5 of 13

GSoff

mrc156

(V)

Page 6

Philips Semiconductors

BF556A; BF556B; BF556C

N-channel silicon junction ﬁeld-effect transistors

GSoff

mrc153

(V)

100

(µS)

0 −8−6−2 −4

VDS=15V. VDS= 100 mV; VGS=0V.

Fig 4. Common-source output conductance as a

function of gate-source cut-off voltage; typical values.

mrc145

(1)

(2)

(mA)

GSoff

mrc155

(V)

300

DSon

(Ω)

200

100

08624

Fig 5. Drain-source on-state resistance as a function

of gate-source cut-off voltage; typical values.

mrc146

(1)

(2)

(3)

(4)

(mA)

(5)

(6)

VDS (V)

0161248

BF556A

(1) VGS = 0 V. (2) VGS = −0.5 V. (3) VGS = −1.0 V.

(3)

VDS (V)

0161248

BF556B

(1) VGS = 0 V. (2) VGS = −0.5 V. (3) VGS = −1.0 V. (4) VGS = −1.5 V. (5) VGS = −2.0 V. (6) VGS = −2.5 V.

Fig 6. Typical output characteristics. Fig 7. Typical output characteristics.

Product data sheet Rev. 03 — 5 August 2004 6 of 13

Page 7

Philips Semiconductors

BF556A; BF556B; BF556C

N-channel silicon junction ﬁeld-effect transistors

(mA)

0161248

BF556C

(1) VGS = 0 V. (2) VGS = −1.0 V. (3) VGS = −2.0 V.

mrc147

(1)

(2)

(3)

(4)

(5)

(6)

VDS (V)

(mA)

−60−2−4

VDS=15V. (1) BF556C. (2) BF556B. (3) BF556A.

(4) VGS = −3.0 V. (5) VGS = −4.0 V. (6) VGS = −5.0 V.

Fig 8. Typical output characteristics. Fig 9. Typical input characteristics.

mrc148

(1)

(2)

(3)

VGS (V)

(µA)

−1

−2

−3

−80−2−6 −4

(1) (3)

(2)

mrc149

VGS (V)

VDS=15V. (1) BF556C. (2) BF556B. (3) BF556A.

Fig 10. Drain current as a function of gate-source

voltage; typical values.

−10 I

(pA)

−10

−1

(4)

−1

−2

020168124

mrc151

(1)

(2)

(3)

VDG (V)

ID= 10 mA only for BF556B and BF556C. (1) ID = 10 mA. (2) ID = 1 mA. (3) ID = 0.1 mA. (4) I

GSS

Fig 11. Gate current as a function of drain-gate

voltage; typical values.

Product data sheet Rev. 03 — 5 August 2004 7 of 13

Page 8

Philips Semiconductors

BF556A; BF556B; BF556C

N-channel silicon junction ﬁeld-effect transistors

GSS

(pA)

−1

−50 150100050

mrc150

Tj (°C)

VDS=0V; VGS= −20 V. VDS=15V.

Fig 12. Gate current as a function of junction

temperature; typical values.

mrc140

iss

(pF)

rss

(pF)

0.8

0.6

0.4

0.2

−10 0−2−6 −4−8

mrc134

VGS (V)

Fig 13. Reverse transfer capacitance; typical values.

mrc142

is, bis

(mS)

(1)

−1

−10 0−2−6 −4−8 VGS (V)

−2

10 10

VDS=15V. VDS=10V; ID= 1 mA; T

amb

(2)

f (MHz)

=25°C. (1) bis. (2) gis.

Fig 14. Input capacitance; typical values. Fig 15. Common-source input admittance; typical

values.

Product data sheet Rev. 03 — 5 August 2004 8 of 13

Page 9

Philips Semiconductors

BF556A; BF556B; BF556C

N-channel silicon junction ﬁeld-effect transistors

,−b

(mS)

−1

10 10

VDS= 10 V; ID= 1 mA; T

(1)

(2)

=25°C.

amb

f (MHz)

mrc141

(1) gfs. (2) −bfs.

Fig 16. Common-source transfer admittance; typical

values.

mrc143

−10

(mS)

−1

−10

−2

−10

−3

−10

10 10

VDS=10V; ID= 1 mA; T

amb

(1)

(2)

f (MHz)

=25°C.

mrc144

(1) brs. (2) grs.

Fig 17. Common-source reverse admittance; typical

values.

mrc278

os, gos

(mS)

amb

(1)

(2)

f (MHz)

=25°C.

−1

−2

10 10

VDS= 10 V; ID= 1 mA; T (1) bos. (2) gos.

Fig 18. Common-source output admittance;typical

values.

(V)

10 10

f (Hz)

VDS=10V; ID= 1 mA.

Fig 19. Equivalent noise voltage as a function of

frequency.

Product data sheet Rev. 03 — 5 August 2004 9 of 13

Page 10

Philips Semiconductors

BF556A; BF556B; BF556C

N-channel silicon junction ﬁeld-effect transistors

9. Package outline

Plastic surface mounted package; 3 leads SOT23

w M

detail X

v M

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

OUTLINE

VERSION

SOT23 TO-236AB

1.1

0.9

max.

0.1

0.48

0.15

0.38

0.09

IEC JEDEC EIAJ

3.0

2.8

1.4

1.2

REFERENCES

1.9

0.45

0.15

Qwv

0.55

0.2

0.45

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28 99-09-13

2.5

0.95

2.1

Fig 20. Package outline.

Product data sheet Rev. 03 — 5 August 2004 10 of 13

Page 11

Philips Semiconductors

BF556A; BF556B; BF556C

N-channel silicon junction ﬁeld-effect transistors

10. Revision history

Table 9: Revision history

Document ID Release

date

BF556A_BF556B_BF556C_3 20040805 Product data sheet - 9397 750 13393 BF556A-B-C_2 Modiﬁcations:

• The format of this data sheet has been redesigned to comply with the new

presentation and information standard of Philips Semiconductors

• Table 4: marking code changed.

BF556A-B-C_2 19960729 Product data sheet - - -

Data sheet status Change notice Order number Supersedes

Product data sheet Rev. 03 — 5 August 2004 11 of 13

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Philips Semiconductors

11. Data sheet status

BF556A; BF556B; BF556C

N-channel silicon junction ﬁeld-effect transistors

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheetcontains data from the preliminary speciﬁcation.Supplementary data willbe published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date.PhilipsSemiconductors reserves theright to change the speciﬁcationwithoutnotice, in order to improve the design and supply the best possible product.

right to make changes at any time in order to improvethe design, manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, andmakes no representationsor warranties thatthese products are free from patent,copyright, or mask work rightinfringement, unlessotherwise speciﬁed.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: [email protected]

Product data sheet Rev. 03 — 5 August 2004 12 of 13

Page 13

Philips Semiconductors

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4

8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 12

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information . . . . . . . . . . . . . . . . . . . . 12

BF556A; BF556B; BF556C

N-channel silicon junction ﬁeld-effect transistors

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 5 August 2004

Document order number: 9397 750 13393