Philips bf545a_bf545b_bf545c Datasheet

Download

Page 1

BF545A; BF545B; BF545C

N-channel silicon junction ﬁeld-effect transistors

Rev. 03 — 5 August 2004 Product data sheet

1. Product proﬁle

1.1 General description

N-channel symmetrical silicon junction ﬁeld-effect transistors in a SOT23 package.

CAUTION

MSC895

1.2 Features

■ Low leakage level (typ. 500 fA)

■ High gain

■ Low cut-off voltage (max. 2.2 V for BF545A).

This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling.

1.3 Applications

■ Impedance converters in e.g. electret microphones and infra-red detectors

■ VHF ampliﬁers in oscillators and mixers.

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V V

DSS

P y

DS GSoff

tot

drain-source voltage - - ±30 V gate-source cut-off

voltage drain current VGS=0V; VDS=15V

total power dissipation T

 forward transfer

admittance

ID=1µA; VDS=15V −0.4 - −7.8 V

BF545A 2 - 6.5 mA BF545B 6 - 15 mA BF545C 12 - 25 mA

≤ 25 °C - - 250 mW

amb

VGS=0V; VDS= 15 V 3 - 6.5 mS

Page 2

Philips Semiconductors

2. Pinning information

Table 2: Pinning

Pin Description Simpliﬁed outline Symbol

1 source (s) 2 drain (d) 3 gate (g)

3. Ordering information

Table 3: Ordering information

Type number Package

BF545A - plastic surface mounted package; 3 leads SOT23 BF545B BF545C

BF545A; BF545B; BF545C

N-channel silicon junction ﬁeld-effect transistors

SOT23

Name Description Version

d sg

sym054

4. Marking

Table 4: Marking

Type number Marking code

BF545A 20* BF545B 21* BF545C 22*

[1] * = p: made in Hong Kong.

* = t: made in Malaysia. * = W: made in China.

[1]

Product data sheet Rev. 03 — 5 August 2004 2 of 15

Page 3

Philips Semiconductors

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

GSO

GDO

tot

stg

[1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain

lead 10 mm2.

BF545A; BF545B; BF545C

N-channel silicon junction ﬁeld-effect transistors

drain-source voltage (DC) - ±30 V gate-source voltage open drain - −30 V gate-drain voltage (DC) open source - −30 V forward gate current (DC) - 10 mA total power dissipation T

amb

≤ 25 °C storage temperature −65 +150 °C junction temperature - 150 °C

[1]

- 250 mW

Fig 1. Power derating curve.

6. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-a)

thermal resistance from junction to ambient

400

tot

(mW)

300

200

100

0 20015050 100

amb

mbb688

(°C)

[1]

500 K/W

[1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain

lead 10 mm2.

Product data sheet Rev. 03 — 5 August 2004 3 of 15

Page 4

Philips Semiconductors

BF545A; BF545B; BF545C

N-channel silicon junction ﬁeld-effect transistors

7. Static characteristics

Table 7: Static characteristics

Tj = 25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

(BR)GSS

GSoff

DSS

GSS

 forward transfer admittance VGS=0V; VDS= 15 V 3 - 6.5 mS

y

gate-source breakdown voltage IG= −1 µA; VDS=0V −30--V gate-source cut-off voltage ID= 200 µA; VDS=15V

BF545A −0.4 - −2.2 V BF545B −1.6 - −3.8 V BF545C −3.2 - −7.8 V

=1µA; VDS=15V −0.4 - −7.5 V

drain current VGS=0V; VDS=15V

BF545A 2 - 6.5 mA BF545B 6 - 15 mA BF545C 12 - 25 mA

gate-source leakage current VGS= −20 V; VDS=0V - −0.5 −1000 pA

 common source output

= −20 V; VDS=0V;

= 125 °C

VGS=0V; VDS=15V - 40 - µS

--−100 nA

admittance

Product data sheet Rev. 03 — 5 August 2004 4 of 15

Page 5

Philips Semiconductors

BF545A; BF545B; BF545C

N-channel silicon junction ﬁeld-effect transistors

8. Dynamic characteristics

Table 8: Dynamic characteristics

= 25°C unless otherwise speciﬁed.

amb

Symbol Parameter Conditions Min Typ Max Unit

iss

rss

input capacitance VDS=15V; f=1MHz

= −10 V - 1.7 - pF

=0V - 3 - pF

reverse transfer capacitance VDS=15V; f=1MHz

= −10 V - 0.8 - pF

= 0 V - 0.9 - pF

common source input conductance

VDS=10V; ID=1mA

f = 100 MHz - 15 - µS f = 450 MHz - 300 - µS

common source transfer conductance

VDS=10V; ID=1mA

f = 100 MHz - 2 - mS f = 450 MHz - 1.8 - mS

common source reverse conductance

VDS=10V; ID=1mA

f = 100 MHz - −6- µS f = 450 MHz - −40 - µS

common source output conductance

VDS=10V; ID=1mA

f = 100 MHz - 30 - µS f = 450 MHz - 60 - µS

GSoff

mbb467

(V)

(mS)

5.5

4.5

0 −8−6−2 −4

Fig 3. Forward transfer admittance as a function of

gate-source cut-off voltage; typical values.

DSS

(mA)

0 −8−6−2 −4

VDS = 15 V; Tj = 25 °C. VDS = 15 V; VGS = 0 V; Tj = 25 °C.

Fig 2. Drain current as a function of gate-source

cut-off voltage; typical values.

Product data sheet Rev. 03 — 5 August 2004 5 of 15

GSoff

mbb466

(V)

Page 6

Philips Semiconductors

BF545A; BF545B; BF545C

N-channel silicon junction ﬁeld-effect transistors

GSoff

mbb465

(V)

(µS)

0 −8−6−2 −4

VDS = 15 V; VGS = 0 V; Tj = 25 °C. VDS = 100 mV; VGS = 0 V; Tj = 25 °C.

Fig 4. Common-source output admittance as a

function of gate-source cut-off voltage; typical values.

mbb462

(1)

(mA)

GSoff

mbb464

(V)

300

DSon

(Ω)

200

100

0 −8−6−2 −4

Fig 5. Drain-source on-resistance as a function of

gate-source cut-off voltage; typical values.

mbb463

(mA)

0161248

BF545A

Tj = 25 °C.

(2)

(3)

VDS (V)

−30−1−2

BF545A

VDS = 15 V; Tj = 25 °C. (1) VGS = 0 V. (2) VGS = −0.5 V. (3) VGS = −1.0 V.

Fig 6. Typical output characteristics. Fig 7. Typical input characteristics.

VGS (V)

Product data sheet Rev. 03 — 5 August 2004 6 of 15

Page 7

Philips Semiconductors

BF545A; BF545B; BF545C

N-channel silicon junction ﬁeld-effect transistors

(mA)

0161248

BF545B

Tj = 25 °C.

mbb460

(1)

(2)

(3)

(4)

(5)

(6)

VDS (V)

(mA)

−60−2−4

BF545B

VDS = 15 V; Tj = 25 °C. (1) VGS = 0 V. (2) VGS = −0.5 V. (3) VGS = −1.0 V. (4) VGS = −1.5 V. (5) VGS = −2.0 V. (6) VGS = −2.5 V.

Fig 8. Typical output characteristics. Fig 9. Typical input characteristics.

mbb459

VGS (V)

Product data sheet Rev. 03 — 5 August 2004 7 of 15

Page 8

Philips Semiconductors

BF545A; BF545B; BF545C

N-channel silicon junction ﬁeld-effect transistors

(mA)

0161248

BF545C

Tj = 25 °C.

mbb457

(1)

(2)

(3)

(4)

(5) (6)

VDS (V)

(mA)

−80−2−6 −4

BF545C

VDS = 15 V; Tj = 25 °C. (1) VGS = 0 V. (2) VGS = −1.0 V. (3) VGS = −2.0 V. (4) VGS = −3.0 V. (5) VGS = −4.0 V. (6) VGS = −5.0 V.

Fig 10. Typical output characteristics. Fig 11. Typical input characteristics.

mbb456

VGS (V)

Product data sheet Rev. 03 — 5 August 2004 8 of 15

Page 9

Philips Semiconductors

BF545A; BF545B; BF545C

N-channel silicon junction ﬁeld-effect transistors

(µA)

−1

−2

−3

−30−1−2

mbb461

VGS (V)

BF545A

VDS = 15 V; Tj = 25 °C.

Fig 12. Drain current as a function of gate-source

voltage; typical values.

mbb455

(µA)

−1

−2

−3

−60−2−4

mbb458

VGS (V)

BF545B

VDS = 15 V; Tj = 25 °C.

Fig 13. Drain current as a function of gate-source

voltage; typical values.

−10 I

(pA)

−10

mbb454

(1)

−1

−2

−3

−80−2−6 −4

BF545C

VDS = 15 V; Tj = 25 °C.

VGS (V)

−10

−1

(4)

−1

−2

020168124

(2)

(3)

VDG (V)

ID= 10 mA only for BF545B and BF545C; Tj=25°C.

(1) ID = 10 mA. (2) ID = 1 mA. (3) ID = 0.1 mA. (4) I

Fig 14. Drain current as a function of gate-source

Fig 15. Gate current as a function of drain-gate

voltage; typical values.

GSS

voltage; typical values.

Product data sheet Rev. 03 — 5 August 2004 9 of 15

Page 10

Philips Semiconductors

BF545A; BF545B; BF545C

N-channel silicon junction ﬁeld-effect transistors

−10

GSS

(pA)

−10

−1

−50 150100050

mbb453

Tj (°C)

VDS = 0 V; VGS = −20 V. VDS = 15 V; Tj = 25 °C.

Fig 16. Gate current as a function of junction

temperature; typical values.

mbb451

C (pF)

iss

rss

(pF)

0.8

0.6

0.4

0.2

−10 0−2−6 −4−8

mbb452

VGS (V)

Fig 17. Reverse transfer capacitance as a function of

gate-source voltage; typical values.

mbb468

(mS)

(1)

−1

−10 0−2−6 −4−8 VGS (V)

−2

10 10

VDS = 15 V; Tj = 25 °C. VDS = 10 V; ID = 1 mA; T

= 25 °C.

amb

(2)

f (MHz)

(1) bis. (2) gis.

Fig 18. Typical input capacitance. Fig 19. Common-source input admittance; typical

values.

Product data sheet Rev. 03 — 5 August 2004 10 of 15

Page 11

Philips Semiconductors

BF545A; BF545B; BF545C

N-channel silicon junction ﬁeld-effect transistors

(mS)

(1)

(2)

= 25 °C.

amb

−1

10 10

VDS = 10 V; ID = 1 mA; T

mbb469

f (MHz)

(1) gfs. (2) −bfs.

Fig 20. Common-source forward transfer admittance;

typical values.

(mS)

−1

−2

−3

10 10

VDS = 10 V; ID = 1 mA; T

= 25 °C.

amb

(1)

(2)

mbb470

f (MHz)

(1) −brs. (2) −grs.

Fig 21. Common-source reverse transfer admittance;

typical values.

mbb471

(mS)

−1

−2

VDS = 10 V; ID = 1 mA; T

= 25 °C.

amb

10 10

(1) bos. (2) gos.

Fig 22. Common-source output admittance; typical values.

(1)

(2)

f (MHz)

Product data sheet Rev. 03 — 5 August 2004 11 of 15

Page 12

Philips Semiconductors

BF545A; BF545B; BF545C

N-channel silicon junction ﬁeld-effect transistors

9. Package outline

Plastic surface mounted package; 3 leads SOT23

w M

detail X

v M

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

1.1

0.9

OUTLINE

VERSION

SOT23 TO-236AB

max.

0.1

0.48

0.15

0.09

3.0

2.8

0.38

IEC JEDEC EIAJ

1.4

1.9

1.2

REFERENCES

0.95

Qwv

2.5

2.1

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28 99-09-13

Fig 23. Package outline.

Product data sheet Rev. 03 — 5 August 2004 12 of 15

Page 13

Philips Semiconductors

BF545A; BF545B; BF545C

N-channel silicon junction ﬁeld-effect transistors

10. Revision history

Table 9: Revision history

Document ID Release date Data sheet status Change notice Order number Supersedes

BF545A_BF545B_ BF545C_3

Modiﬁcations:

BF545A-B-C_2 19960729 Product speciﬁcation - - -

20040805 Product data sheet - 9397 750 13391 BF545A-B-C_2

• The format of this data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors

• Marking code changed, see Table 4.

Product data sheet Rev. 03 — 5 August 2004 13 of 15

Page 14

Philips Semiconductors

11. Data sheet status

BF545A; BF545B; BF545C

N-channel silicon junction ﬁeld-effect transistors

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheet contains data fromthe preliminary speciﬁcation. Supplementary data will bepublished

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date.PhilipsSemiconductors reserves theright to change the speciﬁcationwithoutnotice, in order to improve the design and supply the best possible product.

right to make changes at any time in order to improvethe design, manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, andmakes no representationsor warranties thatthese products are free from patent,copyright, or mask work rightinfringement, unlessotherwise speciﬁed.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: [email protected]

Product data sheet Rev. 03 — 5 August 2004 14 of 15

Page 15

Philips Semiconductors

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4

8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 14

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14 Contact information . . . . . . . . . . . . . . . . . . . . 14

BF545A; BF545B; BF545C

N-channel silicon junction ﬁeld-effect transistors

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Document order number: 9397 750 13391

Published in The Netherlands

Date of release: 5 August 2004