Philips bf510_bf511_bf512_bf513 Datasheet

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DATA SH EET

DISCRETE SEMICONDUCTORS

BF510 to 513

N-channel silicon field-effect transistors

Product specification December 1997

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NXP Semiconductors Product specification

Fig.1 Simplified outline and symbol.

handbook, halfpage

d s

Top view

MAM385

N-channel silicon field-effect transistors BF510 to 513

DESCRIPTION

Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features ar e the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513).

PINNING - SOT23

1=gate 2 = drain 3 = source

MARKING CODE

BF510 = S6p BF511 = S7p BF512 = S8p BF513 = S9p

QUICK REFERENCE DATA

Drain-source voltage V Drain current (DC or average) I

max. 20 V

max. 30 mA

Total power dissipation

up to T

=40 CP

amb

max. 250 mW

tot

BF510 511 512 513

Drain current  0.7 2.5 6 10 mA

=10 V; VGS= 0 I

 3.0 7.0 12 18 mA

DSS

Transfer admittance (common source)

=10 V; VGS=0; f = 1 kHz yfs  2.5467mS

Feedback capacitance

= 10 V; VGS=0 C

= 10 V; ID=5 mA C

typ. 0.3 0.3 pF

typ. 0.3 0.3 pF

Noise figure at optimum source admittance

=1 mS; BS= 3 mS; f = 100 MHz

=10 V; VGS=0 F typ. 1.5 1.5 dB

=10 V; ID=5 mA F typ. 1.5 1.5 dB

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NXP Semiconductors Product specification

N-channel silicon field-effect transistors BF510 to 513

RATINGS

Limiting values in accordance with the Absolute Maximum Sys t em (IEC 134)

Drain-source voltage V Drain-gate voltage (open source) V Drain current (DC or average) I Gate current  I Total power dissipation up to T

=40 C (note 1) P

amb

Storage temperature range T Junction temperature T

THERMAL RESISTANCE

DS DGO

G tot stg j

max. 20 V max. 20 V max. 30 mA max. 10 mA max. 250 mW 65 to  150 C max. 150 C

From junction to ambient (note 1) R

Note

1. Mounted on a ceramic substrate of 8 mm  10 mm  0.7 mm.

STATIC CHARACTERISTICS

= 25 C

amb

BF510 511 512 513

Gate cut-off current

= 0.2 V; VDS=0 I

V

GSS

 10 10 10 10 nA

Gate-drain breakdown voltage

=0; ID=10 A V

(BR)GDO

 20 20 20 20 V

Drain current

=10 V; VGS=0 I

DSS



0.7

3.0

Gate-source cut-off voltage

=10A; VDS=10 V V

(P)GS

typ. 0.8 1.5 2.2 3 V

th j-a

2.5

7.0

= 430 K/W

1018mA

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NXP Semiconductors Product specification

Fig.2 VGS= 0 for BF510 and BF511;

= 5 mA for BF512 and BF513;

f = 1 MHz; T

amb

= 25 C.

handbook, halfpage

typ

1.5

0.5

(pF)

VDS (V)

4 8 12 16

MDA275

Fig.3 VDS= 10 V; f = 1 kHz; T

amb

=25 C; typical

values.

handbook, halfpage

(mS)

ID (mA)

10 15

MDA276

BF511

BF510

BF512

BF513

N-channel silicon field-effect transistors BF510 to 513

DYNAMIC CHARACTERISTICS

Measuring conditions (common source): V

=10 V; VGS= 0; T

=10 V; ID= 5 mA; T

=25 C for BF510 and BF511

amb

=25 C for BF5 12 and BF513

amb

y-parameters (common source) BF510 511 512 513 Input capacitance at f = 1 MHz C Input conductance at f = 100 MHz g

Feedback capacitance at f = 1 MHz C

Transfer admittance at f = 1 kHz  y

= 0 instead of ID=5 mA  yfs    6.0 7.0 mS

Transfer admittance at f = 100 MHz  y Output capacitance at f = 1 MHz C Output conductance at f = 1 MHz g Output conductance at f = 100 MHz g

os os os

 5555pF typ. 100906050S typ. 0.4 0.4 0.4 0.4 pF

 0.5 0.5 0.5 0.5 pF

  2.5 4.0 4.0 3.5 mS

 typ. 3.5 5.5 5.0 5.0 mS

 3333pF  60 80 100 120 S typ. 35 55 70 90 S

Noise figure at optimum source admittance

=1 mS; BS=3 mS;

f = 100 MHz F ty p. 1.5 1.5 1.5 1.5 dB

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Fig.4 Power derating curve.

handbook, halfpage

amb

(°C)

tot

(mW)

300

200

100

40 200

80 120 160

MDA245

N-channel silicon field-effect transistors BF510 to 513

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NXP Semiconductors Product specification

UNIT

max.

Qwv

REFERENCES

OUTLINE VERSION

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04 06-03-16

IEC JEDEC JEITA

0.1

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

0.95

1.9

2.5

2.1

0.55

0.45

0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

w M

v M

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT23

N-channel silicon field-effect transistors BF510 to 513

PACKAGE OUTLINE

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NXP Semiconductors Product specification

N-channel silicon field-effect transistors BF510 to 513

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective s pecification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Prod uc tio n This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) desc ribed in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

DEFINITIONS Product specification  The information and data

provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

DISCLAIMERS Limited warranty and liability  Information in this

document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

(1)

PRODUCT STATUS

(2)

DEFINITION

development.

Right to make changes  NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication he reof.

Suitability for use  NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications wher e failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inc l usion and/or use is at the customer’s own risk.

Applications  Applications that ar e described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the ris ks associated with their applications and products.

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NXP Semiconductors Product specification

N-channel silicon field-effect transistors BF510 to 513

NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applicat ions and products using NXP Semiconductors products in or de r to avoid a default of the applications and the prod ucts or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.

Limiting values  Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Rec ommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale  NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In cas e an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

Export control  This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Quick reference data  The Quick reference data is an extract of the product data given in t he Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products  Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with auto motive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from cus tom er d esign and use o f the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

No offer to sell or license  Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights .

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NXP Semiconductors

provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.

Contact information

For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected]

The information presented in this document does not form part of any quotation or contra ct, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R77/02/pp9 Date of release: December 1997