Philips bf420_bf422 Datasheet

Page 1
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D186
BF420; BF422
NPN high-voltage transistors
Product data sheet Supersedes data of 1996 Dec 09
2004 Nov 10
Page 2
NXP Semiconductors Product data sheet
NPN high-voltage transistors BF420; BF422

FEATURES

• Low feedback capacitance.

PINNING

PIN DESCRIPTION
1 base

APPLICATIONS

• Class-B video output stages in colour television and
2 collector 3 emitter
professional monitor equipment.

DESCRIPTION

NPN transistors in a TO-92 plastic package. PNP complements: BF421 and BF423.
handbook, halfpage
1
2
3
1
MAM259
Fig.1 Simplified outline (TO-92) and symbol.

ORDERING INFORMATION

PACKAGE
T YPE NUMBER
NAME DESCRIPTION VERSION
BF420 SC-43A plastic single-ended leaded (throug h hole) package; 3 leads SOT54 BF422
2
3

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF420 − 300 V BF422 − 250 V
V
CEO
collector-emitter voltage open base
BF420 − 300 V
BF422 − 250 V I P h C f
CM
tot
FE
re
T
peak collector current − 100 mA total power dissipation T
≤ 25 °C − 830 mW
amb
DC current gain VCE = 20 V; IC = 25 mA 50 − feedback capacitance VCE = 30 V; IC = ic = 0 A; f = 1 MHz − 1.6 pF transition frequency VCE = 10 V; IC = 10 mA; f = 100 MHz 60 − MHz
2004 Nov 10 2
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NXP Semiconductors Product data sheet
NPN high-voltage transistors BF420; BF422

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V I I I P T T T
CBO
CEO
EBO C CM BM
tot
stg
j
amb
collector-base voltage open emitter
BF420 − 300 V BF422 − 250 V
collector-emitter voltage open base
BF420 − 300 V
BF422 − 250 V emitter-base voltage open collector − 5 V collector current (DC) − 50 mA peak collector current − 100 mA peak base current − 50 mA total power dissipation T
≤ 25 °C; note 1 − 830 mW
amb
storage temperature −65 +150 °C junction temperature − 150 °C ambient temperature −65 +150 °C
Note
1. Transistor mounted on a printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 150 K/W
Note
1. Transistor mounted on a printed-circuit board.

CHARACTERISTICS

T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off curren t VCB = 200 V; IE = 0 A − 10 nA
VCB = 200 V; IE = 0 A; Tj = 150 °C − 10 µA
I
EBO
h V C f
T
FE
CEsat
re
emitter-base cut-off current VEB = 5 V; IC = 0 A − 50 nA DC current gain VCE = 20 V; IC = 25 mA 50 − collector-emitter saturation voltage IC = 30 mA; IB = 5 mA − 0.6 V feedback capacitance VCE = 30 V; IC = ic = 0 A; f = 1 MHz − 1.6 pF transition frequency VCE = 10 V; IC = 10 mA; f = 100 MHz 60 − MHz
2004 Nov 10 3
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NXP Semiconductors Product data sheet
4
NPN high-voltage transistors BF420; BF422

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads SOT5
c
E
d
A L
1
D
2
3
b
1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
5.2
mm
5.0
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE VERSION
SOT54 TO-92 SC-43A
b
0.48
0.40
b
c
D
d
1
0.66
0.45
0.38
4.8
4.4
0.55
IEC JEDEC JEITA
E
1.7
4.2
1.4
3.6
REFERENCES
2.54
e
e
1
1.27
L
14.5
12.7
L
1
(1)
L
1
max.
2.5
EUROPEAN
PROJECTION
b
e
1
e
ISSUE DATE
04-06-28 04-11-16
2004 Nov 10 4
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NXP Semiconductors Product data sheet
NPN high-voltage transistors BF420; BF422

DATA SHEET STATUS

DOCUMENT
STATUS
Objective data sheet Development This doc ument contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or comple ting a design.
2. The product status of device(s) desc ribed in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
DISCLAIMERS General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
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(1)
PRODUCT STATUS
(2)
DEFINITION
development.
the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
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No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveya nce or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
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Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modificati on .
Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC
2004 Nov 10 5
60134) may cause permanent damage to
Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Page 6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industri al or intellectual property rights.
Printed in The Netherlands R75/03/pp6 Date of release: 2004 Nov 10 Document order number: 9397 750 13582
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