Page 1
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D186
BF199
NPN medium frequency transistor
Product data sheet
Supersedes data of 1997 Jul 07
2004 Nov 08
Page 2
NXP Semiconductors Product data sheet
NPN medium frequency transistor BF199
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 25 V).
PINNING
PIN DESCRIPTION
1 base
2 emitter
APPLICATIONS
3 collector
• Output stage of a vision IF amplifier.
DESCRIPTION
NPN medium frequency transistor in a TO-92; SOT54
plastic package.
handbook, halfpage
1
2
3
MAM258
3
1
2
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
P
h
f
CBO
CEO
CM
tot
FE
T
collector-base voltage open emitter − − 40 V
collector-emitter voltage open base − − 25 V
peak collector current − − 25 mA
total power dissipation T
≤ 25 °C − − 500 mW
amb
DC current gain VCE = 10 V; IC = 7 mA 38 − −
transition frequency VCE = 10 V; IC = 5 mA; f = 100 MHz − 550 − MHz
ORDERING INFORMATION
PACKAGE
T YPE NUMBER
NAME DESCRIPTION VERSION
BF199 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54
2004 Nov 08 2
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NXP Semiconductors Product data sheet
NPN medium frequency transistor BF199
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 25 V
emitter-base voltage open collector − 4 V
collector current (DC) − 25 mA
peak collector current − 25 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
V
C
f
T
FE
BE
re
collector-base cut-off curren t VCB = 40 V; IE = 0 A − − 100 nA
emitter-base cut-off current VEB = 4 V; IC = 0 A − − 100 nA
DC current gain VCE = 10 V; IC = 7 mA 38 − −
base-emitter voltage VCE = 10 V; IC = 7 mA − 775 925 mV
feedback capacitance VCB = 10 V; IC = 0 A; f = 1 MHz − − 0.5 pF
transition frequency VCE = 10 V; IC = 5 mA; f = 100 MHz − 550 − MHz
2004 Nov 08 3
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NXP Semiconductors Product data sheet
4
NPN medium frequency transistor BF199
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads SOT5
c
E
d
A L
1
D
2
3
b
1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
5.2
mm
5.0
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54 TO-92 SC-43A
b
0.48
0.40
b
c
D
d
1
0.66
0.45
0.38
4.8
4.4
0.55
IEC JEDEC JEITA
E
1.7
4.2
1.4
3.6
REFERENCES
2.54
e
e
1
1.27
L
14.5
12.7
L
1
(1)
L
1
max.
2.5
EUROPEAN
PROJECTION
b
e
1
e
ISSUE DATE
04-06-28
04-11-16
2004 Nov 08 4
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NXP Semiconductors Product data sheet
NPN medium frequency transistor BF199
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his doc ument contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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General ⎯ Information in this document is believed to be
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(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
2004 Nov 08 5
60134) may cause permanent damage to
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Page 6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industri al or intellectual property rights.
Printed in The Netherlands R75/03/pp6 Date of release: 2004 Nov 08 Document order number: 9397 750 13577
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