Philips bf1215 Datasheet

BF1215

Dual N-channel dual gate MOSFET

Rev. 01 — 6 May 2010 Product data sheet

1. Product profile

1.1 General description

The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source
lead, shared gate2 lead and an integrated switch.

The source and substrate are interconnected. Internal bias circuits enable DC stabilization
and a very good cross modulation performance during AGC. Integrated diodes between
the gates and source protect against excessive input voltage surges. The transistor is
availiable as a SOT363 micro-miniature plastic package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features and benefits

 Two low noise gain controlled amplifiers in a single package; one with full internal bias

and one with partial internal bias

 Superior cross modulation performance during AGC
 High forward transfer admittance to input capacitance ratio
 Suitable for VHF and UHF applications: both amplifiers are optimized for VHF

applications.

 Internal switch reduces external components

1.3 Applications

 Gain controlled low noise amplifiers for VHF and UHF applications with a 5 V supply

 Digital and analog television tuners
 Professional communication equipment

NXP Semiconductors

1.4 Quick reference data

Table 1. Quick reference data for amplifier A and B

Symbol Parameter Conditions Min Typ Max Unit

V

DS

I

D

P

tot

|y

fs

C

iss(G1)

C

rss

NF noise figure f = 400 MHz; Y

Xmod cross modulation input level for k = 1 % at

T

j

[1] Tsp is the temperature at the soldering point of the source lead.
[2] Calculated from S-parameters.
[3] Measured in Figure 32

Dual N-channel dual gate MOSFET

drain-source voltage DC - - 6 V
drain current DC - - 30 mA
total power dissipation Tsp≤ 107 °C

| forward transfer admittance f = 100 MHz; Tj=25°C;

ID=19mA
input capacitance at gate1 f = 100 MHz
reverse transfer capacitance f = 100 MHz

S=YS(opt)

f=800MHz; Y

40 dB AGC; f

=60MHz

f

unw

S=YS(opt)

=50MHz;

w

junction temperature - - 150 °C

and Figure 33 test circuits.

[1]

--180mW
23 27 38 mS

[2]

-2.5- pF

[2]

-27- fF

-1.5- dB

-1.9- dB

[3]

105 107 - dBμV

BF1215

2. Pinning information

Table 2. Discrete pinning

Pin Description Simplified outline Graphic symbol

1 gate1 (amplifier A)
2gate2
3 gate1 (amplifier B)
4 drain (amplifier B)
5source
6 drain (amplifier A)

3. Ordering information

Table 3. Ordering information

Type number Package

BF1215 - plastic surface-mounted package; 6 leads SOT363

4

56

132

AMP a
G1
(A)

G2 S

G1
(B)

AMP b

sym033

Name Description Version

D

(A)

D

(B)

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Product data sheet Rev. 01 — 6 May 2010 2 of 22

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4. Marking

Table 4. Marking

Type number Marking Description

BF1215 M4p made in Hong Kong

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per MOSFET

V

DS

I

D

I

G1

I

G2

P

tot

T

stg

T

j

[1] Tsp is the temperature at the soldering point of the source lead.

BF1215

Dual N-channel dual gate MOSFET

M4t made in Malaysia
M4w made in China

drain-source voltage DC - 6 V
drain current DC - 30 mA
gate1 current - ±10 mA
gate2 current - ±10 mA
total power dissipation Tsp≤ 107 °C
storage temperature −65 +150 °C
junction temperature - 150 °C

[1]

-180mW

250

P

tot

(mW)

200

150

100

50

0

Fig 1. Power derating curve

0 20015050 100

001aac193

Tsp (˚C)

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Product data sheet Rev. 01 — 6 May 2010 3 of 22

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3

6. Thermal characteristics

BF1215

Dual N-channel dual gate MOSFET

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-sp)

thermal resistance from junction to solder point 240 K/W

7. Static characteristics

Table 7. Static characteristics

Tj=25°C.

Symbol Parameter Conditions Min Typ Max Unit

Per MOSFET; unless otherwise specified

V

(BR)DSS

V

(BR)G1-SS

V

(BR)G2-SS

V

F(S-G1)

V

F(S-G2)

V

G1-S(th)

V

G2-S(th)

I

DS

I

G1-S

I

G2-S

drain-source breakdown voltage V

gate1-source breakdown voltage V
gate2-source breakdown voltage V
forward source-gate1 voltage V
forward source-gate2 voltage V
gate1-source threshold voltage VDS=5V; V
gate2-source threshold voltage VDS=5V; V
drain-source current V

gate1 cut-off current V

gate2 cut-off current V

G1-S=VG2-S

=0V; ID=10μA
amplifier A 6 - - V
amplifier B 6 - - V

G2-S=VDS
G1-S=VDS
G2-S=VDS
G1-S=VDS

G2-S

=0V; I
=0V; I
=0V; I
=0V; I

G2-S
G1-S

=4V; V
amplifier A: V
amplifier B

=0V; V

G2-S

amplifier A: V
amplifier B: V

=4V; V

G2-S

V

G1-S(A)=VG1-S(B)

DS(B)

DS(A)

DS(A)=VDS(B)

G1-S(A)
G1-S(B)

DS(A)=VDS(B)

=10mA 6 - 10 V

G1-S

=10mA 6 - 10 V

G2-S

= 10 mA 0.5 - 1.5 V

S-G1

= 10 mA 0.5 - 1.5 V

S-G2

=4V; ID= 100 μA 0.3 - 1.0 V
=5V; ID= 100 μA 0.4 - 1.0 V

=5V; RG1= 39 kΩ

=5V

[1]

- - 19.5 mA

[2]

--23mA

=0V
=5V - - 50 nA
=5V - - 50 nA

=0V;

- - 20 nA

=0V

[1] RG1 connects gate1 amplifier B to VGG = 0 V, see Figure 2.
[2] R

connects gate1 amplifier B to VGG = 5 V, see Figure 2.

G1

VGG= 5 V: amplifier A is off; amplifier B is on.

= 0 V: amplifier A is on; amplifier B is off.

V

GG

G1 (A)

G2

G1 (B)

D (A)

S

D (B)

R

G1

V

GG

001aaa55

Fig 2. Functional diagram

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Product data sheet Rev. 01 — 6 May 2010 4 of 22

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8. Dynamic characteristics

BF1215

Dual N-channel dual gate MOSFET

=25°C; V

amb

=4V; VDS=5V; ID=19mA.

G2-S

Table 8. Dynamic characteristics for amplifier A and B

Common source; T

Symbol Parameter Conditions Min Typ Max Unit

| forward transfer admittance f = 100 MHz; Tj=25°C232738mS

|y

fs

C

iss(G1)

C

iss(G2)

C

oss

C

rss

G

tr

input capacitance at gate1 f = 100 MHz
input capacitance at gate2 f = 100 MHz
output capacitance f = 100 MHz
reverse transfer capacitance f = 100 MHz
transducer power gain amplifier A: BS=B

S(opt)

; BL=B

L(opt)

[1]

-2.5-pF

[1]

-2.5-pF

[1]

-0.8-pF

[1]

-27-fF

[1]

f = 200 MHz; GS=2mS; GL= 0.5 mS 30 34 38 dB
f = 400 MHz; G
f = 800 MHz; G

amplifier B: B

=2mS; GL= 1 mS 26 30 34 dB

S

= 3.3 mS; GL= 1 mS 22 26 30 dB

S

S=BS(opt)

; BL=B

L(opt)

[1]

f = 200 MHz; GS=2mS; GL= 0.5 mS 30 34 38 dB
f = 400 MHz; G
f = 800 MHz; G

NF noise figure f = 11 MHz; G

f = 400 MHz; Y
f = 800 MHz; Y

Xmod cross modulation input level for k = 1 %; f

f

=60MHz

unw

=2mS; GL= 1 mS 26 31 34 dB

S

= 3.3 mS; GL= 1 mS 22 26 30 dB

S

=20mS; BS=0 S - - 6 dB

S

S=YS(opt)
S=YS(opt)

=50MHz;

w

-1.5-dB

-1.9-dB

[2]

at 0 dB AGC 95 104 - dBμV
at 10 dB AGC - 100 - dBμV
at 20 dB AGC - 104 - dBμV
at 40 dB AGC 105 107 - dBμV

[1] Calculated from S-parameters.
[2] Measured in Figure 32

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 5 of 22

and Figure 33 test circuits.

NXP Semiconductors

001aal549

001aal550

8.1 Graphics for amplifier A

BF1215

Dual N-channel dual gate MOSFET

I

D

(mA)

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V

30

20

10

0

0 2.52.01.0 1.50.5

G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S

V

DS(A)

=4V.
=3.5V.
=3V.
=2.5V.
=2V.
=1.5V.
=1V.

=5V; V

G1-S(B)=VDS(B)

(1)
(2)
(3)
(4)

V

G1-S

=0V; Tj=25°C.

Fig 3. Amplifier A transfer characteristics;

typical values

(5)

(6)

(7)

(V)

30

I

D

(mA)

20

10

0

0642

(1) V

G1-S(A)

(2) V

G1-S(A)

(3) V

G1-S(A)

(4) V

G1-S(A)

(5) V

G1-S(A)

(6) V

G1-S(A)

(7) V

G1-S(A)

(8) V

G1-S(A)

(9) V

G1-S(A)

V

G2-S

=1.9V.
=1.8V.
=1.7V.
=1.6V.
=1.5V.
=1.4V.
=1.3V.
=1.2V.
=1.1V.

=4V; V

G1-S(B)=VDS(B)

VDS (V)

=0V; Tj=25°C.

Fig 4. Amplifier A output characteristics;

typical values

(1)

(2)

(3)

(4)

(5)

(6)

(7)
(8)

(9)

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 6 of 22

NXP Semiconductors

001aal551

001aal552

BF1215

Dual N-channel dual gate MOSFET

30

(1)

|y

fs

(mS)

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V

|

20

10

0

0252010 155

G2-S
G2-S
G2-S
G2-S
G2-S
G2-S

V

DS(A)

=4V.
=3.5V.
=3V.
=2.5V.
=2V.
=1.5V.

=5V; V

G1-S(B)=VDS(B)

(2)

(3)

(4)

(5)

(6)

ID (mA)

=0V; Tj=25°C.

Fig 5. Amplifier A forward transfer admittance as a

function of drain current; typical values

16

I

D(A)

(mA)

12

8

4

0

0604020

=5V; V

V

DS(A)

T

=25°C.

j

= internal gate1 current = current on pin

I

D(B)

drain (

amplifier B) if MOSFET (B) is switched off.

G2-S

=4V; V

DS(B)

I

(μA)

D(B)

=5V; V

G1-S(B)

=0V;

Fig 6. Amplifier A drain current as a function of

internal gate1 current; typical values

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 7 of 22

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001aal553

001aal554

BF1215

Dual N-channel dual gate MOSFET

20

I

D

(mA)

15

10

5

0

054231

V

DS(A)=VDS(B)=Vsup

R

=39kΩ (connected to ground); see Figure 2.

G1

; V

G2-S

V

(V)

sup

=4V; Tj=25°C;

Fig 7. Amplifier A drain current as a function of the

supply voltage to amplifiers A and B;
typical values

40

I

D

(mA)

30

20

10

0

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V

054231

=4V.

DS(B)

=3.5V.

DS(B)

=3V.

DS(B)

=2.5V.

DS(B)

=2V.

DS(B)

=1.5V.

DS(B)

=5V; V

V

DS(A)

T

=25°C.

j

(6)

G1-S(B)

(1)

(2)

(3)

(4)

(5)

V

(V)

G2-S

= 0 V; gate1 (amplifier A) is open;

Fig 8. Amplifier A drain current as a function of gate2

voltage; typical values

120

Xmod

(dBμV)

110

100

90

80

0504020 3010

V

DS(A)=VDS(B)

f

unw

=60MHz; T

=5V; V

G1-S(B)

=25°C; see Figure 32.

amb

001aal555

gain reduction (dB)

=0V; fw=50MHz;

Fig 9. Amplifier A unwanted voltage for 1 %

cross modulation as a function of g ain

0

gain

reduction

(dB)

10

20

30

40

50

04312

V

DS(A)=VDS(B)

T

=25°C; see Figure 32.

j

=5V; V

G1-S(B)

Fig 10. Amplifier A gain reduction as a function of

AGC voltage; typical values

001aal556

V

(V)

AGC

=0V; f=50MHz;

reduction; typical values

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 8 of 22

NXP Semiconductors

001aal557

001aal558

BF1215

Dual N-channel dual gate MOSFET

40

I

D

(mA)

30

20

10

0

0504020 3010

V

DS(A)=VDS(B)

T

=25°C; see Figure 32.

j

=5V; V

G1-S(B)

gain reduction (dB)

=0V; f=50MHz;

Fig 11. Amplifier A drain current as a function of gain

reduction; typical values

001aal559

−10

(deg)

2

ϕ

fs

|yfs|

(mS)

2

10

|yfs|

2

10

gis, b

is

(mS)

10

b

is

1

g

2

10

=4V; V

is

f (MHz)

DS(B)=VG1-S(B)

3

=0V;

−1

10

−2

10

10 10

=5V; V

V

DS(A)

I

=19mA; Tj=25°C.

D(A)

G2-S

Fig 12. Amplifier A input admittance as a function of

frequency; typical values

001aal560

−10

(deg)

−10

3

ϕ

rs

2

|yrs|

(mS)

3

10

ϕ

2

10

rs

10

ϕ

fs

1

10 10

V

=5V; V

DS(A)

I

=19mA; Tj=25°C.

D(A)

G2-S

2

10

=4V; V

f (MHz)

DS(B)=VG1-S(B)

−10

−1

3

=0V;

Fig 13. Amplifier A forward transfer admittance and

phase as a function of frequency;
typical values

|yrs|

10

1

10 10

=5V; V

V

DS(A)

I

=19mA; Tj=25°C.

D(A)

G2-S

2

10

=4V; V

f (MHz)

DS(B)=VG1-S(B)

−10

−1

3

=0V;

Fig 14. Amplifier A reverse transfer admittance and

phase as a function of frequency;
typical values

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 9 of 22

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001aal561

b

, g

os

(mS)

BF1215

Dual N-channel dual gate MOSFET

10

os

V

DS(A)

=5V; V

1

−1

10

−2

10

10 10

=4V; V

G2-S

DS(B)=VG1-S(B)

b

os

g

os

2

10

=0V; I

f (MHz)

=19mA; Tj=25°C.

D(A)

3

Fig 15. Amplifier A output admittance as a function of frequency; typical values

8.2 Scattering parameters for amplifier A

Table 9. Scattering parameters for amplifier A

=5V; V

V

DS(A)

f (MHz) s

G2-S

11

Magnitude
(ratio)

50 0.992 −4.61 2.80 175.87 0.00078 95.65 0.993 −1.38
100 0.991 −8.79 2.80 172.12 0.00145 83.73 0.994 −2.76
200 0.986 −17.57 2.77 164.25 0.00292 78.53 0.992 −5.50
300 0.977 −26.11 2.74 156.52 0.00415 73.60 0.991 −8.21
400 0.966 −34.46 2.69 148.98 0.00528 69.27 0.989 −10.91
500 0.952 −42.75 2.64 141.49 0.00620 64.79 0.986 −13.58
600 0.936 −50.92 2.58 134.13 0.00691 60.71 0.984 −16.22
700 0.920 −58.79 2.50 127.01 0.00733 57.37 0.982 −18.86
800 0.902 −66.40 2.43 120.04 0.00758 54.40 0.979 −21.47
900 0.881 −73.87 2.36 113.24 0.00763 52.13 0.978 −24.00
1000 0.861 −81.10 2.28 106.69 0.00749 50.46 0.976 −26.55

=4V; I

=19mA; V

D(A)

Angle
(degree)

=0V;V

DS(B)

s

21

Magnitude
(ratio)

G1-S(B)

Angle
(degree)

=0V; T

= 25 °C; typical values.

amb

s

12

Magnitude
(ratio)

Angle
(degree)

s

22

Magnitude
(ratio)

Angle
(degree)

8.3 Noise data for amplifier A

T able 10. Noise data for amplifier A

V

DS(A)

=5V; V

G2-S

=4V; I

=19mA; V

D(A)

DS(B)

=0V; V

G1-S(B)

=0V; T

=25 °C; typical values;

amb

unless otherwise specified.

f (MHz) NF

(dB) Γ

min

opt

rn (ratio)

(ratio) (degree)

400 0.9 0.810 27.95 0.884
800 1.4 0.697 56.50 0.717

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 10 of 22

NXP Semiconductors

001aal562

001aal563

8.4 Graphics for amplifier B

BF1215

Dual N-channel dual gate MOSFET

I

D

(mA)

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V

30

20

10

0

0 2.52.01.0 1.50.5

G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S

V

DS(B)

=4V.
=3.5V.
=3V.
=2.5V.
=2V.
=1.5V.
=1V.

=5V; V

DS(A)=VG1-S(A)

(1)
(2)
(3)
(4)

V

G1-S

=0V; Tj=25°C.

Fig 16. Amplifier B transfer characteristics;

typical values

(5)

(6)

(7)

(V)

30

I

D

(mA)

20

10

0

0642

(1) V

G1-S(B)

(2) V

G1-S(B)

(3) V

G1-S(B)

(4) V

G1-S(B)

(5) V

G1-S(B)

(6) V

G1-S(B)

(7) V

G1-S(B)

(8) V

G1-S(B)

(9) V

G1-S(B)

V

G2-S

=1.9V.
=1.8V.
=1.7V.
=1.6V.
=1.5V.
=1.4V.
=1.3V.
=1.2V.
=1.1V.

=4V; V

DS(A)=VG1-S(A)

VDS (V)

=0V; Tj=25°C.

Fig 17. Amplifier B output characteristics;

typical values

(1)

(2)

(3)

(4)

(5)

(6)

(7)
(8)

(9)

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 11 of 22

NXP Semiconductors

001aal564

001aal565

BF1215

Dual N-channel dual gate MOSFET

100

I

G1

(μA)

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V

75

50

25

0

0 2.52.01.0 1.50.5

G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S

V

DS(B)

=4V.
=3.5V.
=3V.
=2.5V.
=2V.
=1.5V.
=1V.

=5V; V

DS(A)=VG1-S(A)

(1)

(2)

(3)

(4)

(5)

(6)

V

(V)

G1-S

=0V; Tj=25°C.

Fig 18. Amplifier B gate1 current as a function of

gate1 voltage; typical values

30

(1)

|y

fs

(mS)

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V

|

20

10

0

0252010 155

G2-S
G2-S
G2-S
G2-S
G2-S
G2-S

V

DS(B)

=4V.
=3.5V.
=3V.
=2.5V.
=2V.
=1.5V.

=5V; V

DS(A)=VG1-S(A)

(2)

(3)

(4)

(5)

(6)

ID (mA)

=0V; Tj=25°C.

Fig 19. Amplifier B forward transfer admittance as a

function of drain current; typical values

16

I

D

(mA)

12

8

4

0

0604020

V

DS(B)

T

j

=5V; V

=25°C.

G2-S

=4V; V

DS(A)=VG1-S(A)

001aal566

IG1 (μA)

=0V;

Fig 20. Amplifier B drain current as a function of gate1

current; typical values

001aal567

VGG (V)

=0V;

I

D

(mA)

20

15

10

5

0

054231

=5V; V

V

DS(B)

T

=25°C; RG1=39kΩ (connected to VGG); see

j

Figure 2

.

G2-S

=4V; V

DS(A)=VG1-S(A)

Fig 21. Amplifier B drain current as a function of gate1

supply voltage; typical values

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 12 of 22

NXP Semiconductors

001aal568

001aal569

BF1215

Dual N-channel dual gate MOSFET

I

D

(mA)

40

30

20

10

0

054231

(1)

(2)

(3)

(4)

(5)

VGG = VDS (V)

(1) RG1=12kΩ.
(2) R
(3) R
(4) R
(5) R

=27kΩ.

G1

=39kΩ.

G1

=67kΩ.

G1

=80kΩ.

G1

=4V; V

V

G2-S

connected to V

DS(A)=VG1-S(A)

; see Figure 2.

GG

=0V; Tj=25°C; RG1is

Fig 22. Amplifier B drain current as a function of gate1

supply voltage and drain supply voltage;
typical values

40

I

D

(mA)

30

20

10

0

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V

(6)

054231

=4.0V.

GG

=3.5V.

GG

=3.0V.

GG

=2.5V.

GG

=2.0V.

GG

=1.5V.

GG

=5V; V

V

DS(B)

R

=39kΩ (connected to VGG); see Figure 2.

G1

DS(A)=VG1-S(A)

(1)

(2)

(3)

(4)

(5)

V

(V)

G2-S

=0V; Tj=25°C;

Fig 23. Amplifier B drain current as a function of gate2

voltage; typical values

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 13 of 22

NXP Semiconductors

BF1215

Dual N-channel dual gate MOSFET

001aal570

V

G1-S

(1)

(2)

(3)

(4)

(5)

(V)

I

G1

(μA)

100

75

50

25

0

054231

(1) VGG=5.0V.
(2) V
(3) V
(4) V
(5) V

=4.5V.

GG

=4.0V.

GG

=3.5V.

GG

=3.0V.

GG

=5V; V

V

DS(B)

R

=39kΩ (connected to VGG); see Figure 2.

G1

DS(A)=VG1-S(A)

=0V; Tj=25°C;

Fig 24. Amplifier B gate1 current as a function of

gate2 voltage; typical values

120

Xmod

(dBμV)

110

100

90

80

0504020 3010

V

=5V; VGG=5V; V

DS(B)

R

=39kΩ (connected to VGG); fw=50MHz;

G1

f

=60MHz; T

unw

amb

DS(A)=VG1-S(A)

=25°C; see Figure 33.

001aal571

gain reduction (dB)

=0V;

Fig 25. Amplifier B unwanted voltage for 1 %

cross modulation as a function of gain
reduction; typical values

001aal572

V

AGC

(V)

=0V;

gain

reduction

(dB)

10

20

30

40

50

0

04312

V

=5V; VGG=5V; V

DS(B)

R

=39kΩ (connected to VGG); f = 50 MHz;

G1

T

=25°C; see Figure 33.

amb

DS(A)=VG1-S(A)

Fig 26. Amplifier B gain reduction as a function of

AGC voltage; typical values

001aal573

gain reduction (dB)

=0V;

I

D

(mA)

40

30

20

10

0

0504020 3010

V

=5V; VGG=5V; V

DS(B)

R

=39kΩ (connected to VGG); f = 50 MHz;

G1

T

=25°C; see Figure 33.

amb

DS(A)=VG1-S(A)

Fig 27. Amplifier B drain current as a function of gain

reduction; typical values

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 14 of 22

NXP Semiconductors

001aal574

001aal575

BF1215

Dual N-channel dual gate MOSFET

2

10

gis, b

is

(mS)

10

b

is

1

g

2

10

=4V; V

is

f (MHz)

DS(A)=VG1-S(A)

3

= 0 V;

−1

10

−2

10

10 10

V

=5V; V

DS(B)

I

=19mA; Tj=25°C.

D(B)

G2-S

Fig 28. Input admittance as a function of frequency;

typical values

001aal576

−10

(deg)

3

ϕ

rs

|yrs|

(mS)

3

10

2

10

|yfs|

(mS)

10

1

10 10

=5V; V

V

DS(B)

I

=19mA; Tj=25°C.

D(B)

G2-S

|yfs|

ϕ

2

10

=4V; V

fs

f (MHz)

DS(A)=VG1-S(A)

−10

−10

−1

3

= 0 V;

2

ϕ

fs

(deg)

Fig 29. Forward transfer admittance and phase as a

function of frequency; typical values

001aal577

b

, g

os

(mS)

10

os

ϕ

|yrs|

2

10

=4V; V

rs

f (MHz)

DS(A)=VG1-S(A)

−10

−10

−1

3

= 0 V;

2

2

10

10

1

10 10

V

=5V; V

DS(B)

I

=19mA; Tj=25°C.

D(B)

G2-S

Fig 30. Reverse transfer admittance and phase as a

function of frequency; typical values

1

−1

10

−2

10

10 10

=5V; V

V

DS(B)

I

=19mA; Tj=25°C.

D(B)

G2-S

b

g

2

10

=4V; V

os

os

f (MHz)

DS(A)=VG1-S(A)

3

= 0 V;

Fig 31. Output admittance as a function of frequency;

typical values

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 15 of 22

NXP Semiconductors

BF1215

Dual N-channel dual gate MOSFET

8.5 Scattering parameters for amplifier B

Table 11. Scattering parameters for amplifier B

V

=5V; V

DS(B)

f (MHz) s

G2-S

11

Magnitude
(ratio)

50 0.987 −4.68 2.77 175.73 0.00074 100.59 0.992 −1.47
100 0.983 −8.74 2.75 171.97 0.00147 85.47 0.992 −3.03
200 0.979 −17.33 2.73 164.04 0.00291 83.85 0.991 −6.07
300 0.970 −25.74 2.70 156.20 0.00422 82.04 0.989 −9.06
400 0.961 −33.99 2.66 148.55 0.00547 80.56 0.987 −12.03
500 0.948 −42.21 2.60 140.92 0.00654 79.15 0.986 −14.99
600 0.932 −50.29 2.54 133.41 0.00744 78.33 0.983 −17.97
700 0.917 −58.13 2.47 126.14 0.00822 78.46 0.981 −20.93
800 0.900 −65.75 2.40 119.00 0.00890 78.92 0.978 −23.84
900 0.981 −73.19 2.33 112.02 0.00947 80.11 0.977 −26.71
1000 0.962 −80.36 2.25 105.26 0.00997 81.84 0.975 −29.63

=4V; I

=15mA; V

D(B)

Angle
(degree)

=0V;V

DS(A)

s

21

Magnitude
(ratio)

G1-S(A)

Angle
(degree)

=0V; T

= 25 °C; typical values.

amb

s

12

Magnitude
(ratio)

Angle
(degree)

s

22

Magnitude
(ratio)

Angle
(degree)

8.6 Noise data for amplifier B

T able 12. Noise data for amplifier B

=5V; V

V

DS(B)

unless otherwise specified.

f (MHz) NF

400 1.1 0.755 27.61 0.860
800 1.6 0.659 56.19 0.712

G2-S

=4V; I

min

=19mA; V

D(B)

(dB) Γ

DS(A)

opt

=0V; V

G1-S(A)

=0V; T

(ratio) (deg)

=25°C; typical values;

amb

rn (Ω)

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 16 of 22

NXP Semiconductors

8

9

9. Test information

BF1215

Dual N-channel dual gate MOSFET

V

V

AGC

DS(A)

5 V

4.7 nF

4.7 nF 4.7 nF

50 Ω

4.7 nF

4.7 nF

50 Ω

V

0 V

GG

R
50 Ω

GEN

V

i

Fig 32. Cross-modulation test set-up for amplifie r A.

V

AGC

10 kΩ

4.7 nF

G1 (A)

4.7 nF

50 Ω

4.7 nF

G1 (B)

10 kΩ

G1 (A)

G1 (B)

R

G1

G2

G2

BF1215

BF1215

D (A)

S

D (B)

D (A)

S

D (B)

V

DS(A)

5 V

V

DS(B)

L1

2.2 μH

5 V

4.7 nF

4.7 nF

L1

2.2 μH

L2

2.2 μH

4.7 nF

R
50 Ω

001aal57

L

R
50 Ω

GEN

V

i

50 Ω

V

5 V

GG

L2

V

DS(B)

5 V

2.2 μH

4.7 nF

R

G1

R
50 Ω

001aal57

L

Fig 33. Cross-modulation test set-up for amplifie r B.

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 17 of 22

NXP Semiconductors

3

BF1215

Dual N-channel dual gate MOSFET

10. Package outline

Plastic surface-mounted package; 6 leads SOT36

D

y

pin 1
index

132

e

1

e

E

AB

X

H

E

456

Q

A

A

1

b

p

wBM

detail X

L

p

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

1.1

mm

0.8

OUTLINE
VERSION

SOT363 SC-88

max

0.1

b

cD

p

0.30

0.20

IEC JEDEC JEITA

0.25

0.10

2.2

1.8

E

1.35

1.3

1.15

REFERENCES

e

e

0.65

HEL

1

2.2

0.45

2.0

0.15

Qywv

p

0.25

0.15

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

04-11-08
06-03-16

Fig 34. Package outline SOT363

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 18 of 22

NXP Semiconductors

BF1215

Dual N-channel dual gate MOSFET

11. Abbreviations

Table 13. Abbreviations

Acronym Description

AGC Automatic Gain Control
DC Direct Current
MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor
UHF Ultra High Frequency
VHF Very High Frequency

12. Revision history

Table 14. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BF1215_1 20100506 Product data sheet - -

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 19 of 22

NXP Semiconductors

BF1215

Dual N-channel dual gate MOSFET

13. Legal information

13.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objecti ve specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied u pon to co nt ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.

13.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonabl y be expected
to result in personal injury, death or severe property or environment al
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.

NXP Semiconductors does not accept any liability related to any default ,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third part y
customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell product s that is ope n for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

, unless otherwise

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 20 of 22

NXP Semiconductors

BF1215

Dual N-channel dual gate MOSFET

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It i s neither qua lif ied nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equ ipment or applications.

In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, da mages or failed produ ct cl aims resulting from custome r design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.

13.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks
are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

BF1215_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 01 — 6 May 2010 21 of 22

NXP Semiconductors

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4

8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5

8.1 Graphics for amplifier A . . . . . . . . . . . . . . . . . . 6

8.2 Scattering parameters for amplifier A. . . . . . . 10

8.3 Noise data for amplifier A . . . . . . . . . . . . . . . . 10

8.4 Graphics for amplifier B . . . . . . . . . . . . . . . . . 11

8.5 Scattering parameters for amplifier B. . . . . . . 16

8.6 Noise data for amplifier B . . . . . . . . . . . . . . . . 16

9 Test information. . . . . . . . . . . . . . . . . . . . . . . . 17

10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 18

11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 19

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 19

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 20

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 20

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21

14 Contact information. . . . . . . . . . . . . . . . . . . . . 21

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

BF1215

Dual N-channel dual gate MOSFET

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2010. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 6 May 2010

Document identifier: BF1215_1