Philips bf1214 Datasheet

BF1214

Dual N-channel dual gate MOSFET

Rev. 01 — 30 October 2007 Product data sheet

1. Product profile

1.1 General description

The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads.

The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross modulation performance during AGC. Integrated
diodes between thegates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features

n Two low noise gain controlled amplifiers in a single package; both with a partly

integrated bias

n Superior cross modulation performance during AGC
n High forward transfer admittance
n High forward transfer admittance to input capacitance ratio
n Both amplifiers optimized for VHF applications, yet suitable for VHF and UHF

applications

1.3 Applications

n Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply

voltage

u digital and analog television tuners
u professional communication equipment

NXP Semiconductors

1.4 Quick reference data

Table 1. Quick reference data for amplifier A and B

Symbol Parameter Conditions Min Typ Max Unit

V

DS

I

D

P

tot

|y

fs

C

iss(G1)

C

rss

NF noise figure f = 400 MHz; Y

Xmod cross modulation input level for k = 1 % at

T

j

[1] Tsp is the temperature at the soldering point of the source lead.
[2] Calculated from S-parameters.
[3] Measured in Figure 24 test circuit.

Dual N-channel dual gate MOSFET

drain-source voltage DC - - 6 V
drain current DC - - 30 mA
total power dissipation Tsp≤ 107 °C

| forward transfer admittance f = 100 MHz; Tj=25°C;

I

=18mA

D

input capacitance at gate1 f = 100 MHz
reverse transfer capacitance f = 100 MHz

S=YS(opt)

f = 800 MHz; Y

40 dB AGC; f
f

=60MHz

unw

S=YS(opt)

= 50 MHz;

w

junction temperature - - 150 °C

[1]

- - 180 mW
27 32 37 mS

[2]

- 2.2 2.7 pF

[2]

-20-fF

- 0.9 1.5 dB

- 1.2 1.8 dB

[3]

102 105 - dBµV

BF1214

2. Pinning information

Table 2. Discrete pinning

Pin Description Simplified outline Symbol

1 drain (AMP A)
2 source
3 drain (AMP B)
4 gate1 (AMP B)
5 gate2
6 gate1 (AMP A)

3. Ordering information

Table 3. Ordering information

Type number Package

BF1214 - plastic surface-mounted package; 6 leads SOT363

56

4

132

AMP A

G1A

G2

G1B

AMP B

sym119

Name Description Version

DA

S

DB

BF1214_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 30 October 2007 2 of 18

NXP Semiconductors

4. Marking

Table 4. Marking

Type number Marking Description

BF1214 SB* * = p : made in Hong Kong

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per MOSFET

V

DS

I

D

I

G1

I

G2

P

tot

T

stg

T

j

[1] Tsp is the temperature at the soldering point of the source lead.

BF1214

Dual N-channel dual gate MOSFET

* = t : made in Malaysia
* = w : made in China

drain-source voltage DC - 6 V
drain current DC - 30 mA
gate1 current - ±10 mA
gate2 current - ±10 mA
total power dissipation Tsp≤ 107 °C
storage temperature −65 +150 °C
junction temperature - 150 °C

[1]

- 180 mW

250

P

tot

(mW)

200

150

100

50

0

0 20015050 100

Fig 1. Power derating curve

001aac193

Tsp (˚C)

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Product data sheet Rev. 01 — 30 October 2007 3 of 18

NXP Semiconductors

BF1214

Dual N-channel dual gate MOSFET

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-sp)

thermal resistance from junction to solder point 240 K/W

7. Static characteristics

Table 7. Static characteristics

Tj=25°C.

Symbol Parameter Conditions Min Typ Max Unit

Per MOSFET; unless otherwise specified

V

(BR)DSS

V

(BR)G1-SS

V

(BR)G2-SS

V

F(S-G1)

V

F(S-G2)

V

G1-S(th)

V

G2-S(th)

I

DS

I

G1-S

I

G2-S

drain-source breakdown voltage V

G1-S=VG2-S

amplifier A 6 - - V

amplifier B 6 - - V
gate1-source breakdown voltage V
gate2-source breakdown voltage V
forward source-gate1 voltage V
forward source-gate2 voltage V

G2-S=VDS
G1-S=VDS
G2-S=VDS
G1-S=VDS

gate1-source threshold voltage VDS=5V; V
gate2-source threshold voltage VDS=5V; V
drain-source current V

G2-S

=4V
amplifier A; V
amplifier B; V

gate1 cut-off current V

G2-S

=0V; V
amplifier A; V
amplifier B; V

gate2 cut-off current V

=4V; V

G2-S

V

G1-S(A)=VG1-S(B)

=0V; ID=10µA

=0V; I
=0V; I
=0V; I
=0V; I

G2-S
G1-S

DS(A)
DS(B)

DS(A)=VDS(B)

G1-S(A)
G1-S(B)

DS(A)=VDS(B)

=10mA 6 - 10 V

G1-S

=10mA 6 - 10 V

G2-S

= 10 mA 0.5 - 1.5 V

S-G1

= 10 mA 0.5 - 1.5 V

S-G2

=4V; ID= 100 µA 0.3 - 1.0 V
=5V; ID= 100 µA 0.4 - 1.0 V

[1]

=5V; R
=5V; R

=68kΩ 13 - 23 mA

G1(A)

=68kΩ 13 - 23 mA

G1(B)

=0V
=5V - - 50 nA
=5V - - 50 nA

=0V;

- - 20 nA

=0V

[1] RG1 connects gate1 to VGG = 5 V.

BF1214_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 30 October 2007 4 of 18

NXP Semiconductors

BF1214

Dual N-channel dual gate MOSFET

8. Dynamic characteristics

Table 8. Dynamic characteristics for amplifier A and B

Common source; T

Symbol Parameter Conditions Min Typ Max Unit

| forward transfer admittance f = 100 MHz; Tj=25°C273237mS

|y

fs

C

iss(G1)

C

iss(G2)

C

oss

C

rss

G

tr

input capacitance at gate1 f = 100 MHz
input capacitance at gate2 f = 100 MHz
output capacitance f = 100 MHz
reverse transfer capacitance f = 100 MHz
transducer power gain amplifier A; BS=B

NF noise figure f = 11 MHz; G

Xmod cross modulation input level for k = 1 %; f

=25°C; V

amb

=4V; VDS=5V; ID= 18 mA.

G2-S

f = 200 MHz; GS= 2 mS; GL= 0.5 mS 31 35 39 dB
f = 400 MHz; G
f = 800 MHz; G

amplifier B; B

S=BS(opt)

f = 200 MHz; GS= 2 mS; GL= 0.5 mS 31 35 39 dB
f = 400 MHz; G
f = 800 MHz; G

= 20 mS; BS= 0 S - 3.0 - dB

S

f = 400 MHz; Y
f = 800 MHz; Y

f

=60MHz

unw

S=YS(opt)
S=YS(opt)

at 0 dB AGC 90 - - dBµV
at 10 dB AGC - 94 - dBµV
at 20 dB AGC - 99 - dBµV
at 40 dB AGC 102 105 - dBµV

[1]

- 2.2 2.7 pF

[1]

- 3.5 - pF

[1]

- 0.8 - pF

[1]

-20-fF

; BL=B

S(opt)

= 2 mS; GL= 1 mS 27 31 35 dB

S

= 3.3 mS; GL=1mS 22 26 30 dB

S

; BL=B

= 2 mS; GL= 1 mS 29 33 37 dB

S

= 3.3 mS; GL=1mS 25 29 33 dB

S

L(opt)

L(opt)

[1]

[1]

- 0.9 1.5 dB

- 1.2 1.8 dB

= 50 MHz;

w

[2]

[1] Calculated from S-parameters.
[2] Measured in Figure 24 test circuit.

BF1214_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 30 October 2007 5 of 18

NXP Semiconductors

8.1 Graphs for amplifier A and B

BF1214

Dual N-channel dual gate MOSFET

40

I

D

(mA)

30

20

10

0

0 2.01.50.5 1.0

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V

G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S

= 4.0 V.
= 3.5 V.
= 3.0 V.
= 2.5 V.
= 2.0 V.
= 1.5 V.
= 1.0 V.

VDS=5V; Tj=25°C.

(1)
(2)
(3)

001aag993

V

G1-S

(4)

(5)

(6)

(7)

(V)

40

I

D

(mA)

30

20

10

0

0642

(1) V

G1-S

(2) V

G1-S

(3) V

G1-S

(4) V

G1-S

(5) V

G1-S

(6) V

G1-S

(7) V

G1-S

(8) V

G1-S

(9) V

G1-S

V

G2-S

= 1.8 V.
= 1.7 V.
= 1.6 V.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
= 1.1 V.
= 1.0 V.
=4V; Tj=25°C.

001aag994

(1)
(2)

(3)
(4)
(5)

(6)
(7)
(8)

(9)

VDS (V)

Fig 2. Transfer characteristics; typical values Fig 3. Output characteristics; typical values

BF1214_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 30 October 2007 6 of 18

NXP Semiconductors

BF1214

Dual N-channel dual gate MOSFET

120

I

G1

(µA)

80

40

0

0 2.01.50.5 1.0

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V

G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S

= 4.0 V.
= 3.5 V.
= 3.0 V.
= 2.5 V.
= 2.0 V.
= 1.5 V.
= 1.0 V.

001aag995

V

G1-S

(1)

(2)

(3)

(4)

(5)

(6)
(7)

(V)

VDS=5V; Tj=25°C.

Fig 4. Gate1 current as a function of gate1 voltage;

typical values

40
|

|y

fs

(mS)

30

20

10

(7)

0

0403010 20

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V

G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S

= 4.0 V.
= 3.5 V.
= 3.0 V.
= 2.5 V.
= 2.0 V.
= 1.5 V.
= 1.0 V.

(4)

(5)

(6)

001aag996

(1)

(2)

(3)

ID (mA)

VDS=5V; Tj=25°C.

Fig 5. Forward transfer admittance as a function of

drain current; typical values

24

I

D

(mA)

18

12

6

0

0604020

VDS=5V; V

=4V; Tj=25°C. VDS=5V; V

G2-S

001aag997

IG1 (µA)

Fig 6. Drain current as a function of gate1 current;

typical values

001aag998

VGG (V)

I

D

(mA)

20

15

10

5

0

054231

=4V; RG1=68kΩ; Tj=25°C.

G2-S

Fig 7. Drain current as a function of gate1 supply

voltage (V

); typical values

GG

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Product data sheet Rev. 01 — 30 October 2007 7 of 18

NXP Semiconductors

BF1214

Dual N-channel dual gate MOSFET

001aag999

(1)
(2)
(3)
(4)
(5)

(6)
(7)
(8)
(9)

VGG = VDS (V)

I

D

(mA)

25

20

15

10

5

0

054231

(1) RG1=47kΩ.
(2) RG1=56kΩ.
(3) RG1=68kΩ.
(4) RG1=82kΩ.
(5) RG1= 100 kΩ.
(6) RG1= 120 kΩ.
(7) RG1= 150 kΩ.
(8) RG1= 180 kΩ.
(9) RG1= 220 kΩ.

V

=4V; Tj=25°C.

G2-S

Fig 8. Drain current as a function of VDS and VGG;

typical values

001aah000

(1)
(2)
(3)
(4)
(5)

V

(V)

G2-S

I

D

(mA)

30

20

10

0

054231

(1) VGG= 5.0 V.
(2) VGG= 4.5 V.
(3) VGG= 4.0 V.
(4) VGG= 3.5 V.
(5) VGG= 3.0 V.

Tj=25°C; RG1=68kΩ (connected to VGG).

Fig 9. Drain current as a function of gate2 voltage;

typical values

BF1214_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 30 October 2007 8 of 18

NXP Semiconductors

8.2 Graphs for amplifier A

BF1214

Dual N-channel dual gate MOSFET

=18mA;

=25°C;

amb

001aah001

V

AGC

(V)

0

gain

reduction

(dB)

10

20

30

40

50

04312

V

=5V; VGG=5V; I

DS(A)

R

=68kΩ; fw= 50 MHz; T

G1(A)

D(nom)(A)

see Figure 24.

Fig 10. Amplifier A: typical gain reduction as a function

of the AGC voltage; typical values

30

110

V

unw

(dBµV)

100

90

80

0504020 3010

V

=5V; VGG=5V; V

DS(A)

R

=68kΩ; fw= 50 MHz; f

G1(A)

I

D(nom)(A)

= 18 mA; T

G2-S(nom)

=25°C; see Figure 24.

amb

001aah002

gain reduction (dB)

=4V;

= 60 MHz;

unw

Fig 11. Amplifier A: unwanted voltage for 1 %

cross modulation as a function of gain
reduction; typical values

001aah003

I

D

(mA)

20

10

0

V

=5V; VGG=5V; V

DS(A)

G2-S(nom)

0504020 3010

=4V; R

=68kΩ; fw= 50 MHz; I

G1(A)

gain reduction (dB)

D(nom)(A)

= 18 mA; T

amb

Fig 12. Amplifier A: typical drain current as a function of gain reduction; typical values

=25°C; see Figure 24.

BF1214_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 30 October 2007 9 of 18

NXP Semiconductors

BF1214

Dual N-channel dual gate MOSFET

2

10

bis, g

is

(mS)

10

b

is

1

g

2

10

=4V; V

is

DS(B)

−1

10

−2

10

10 10

V

=5V; V

I

D(A)

DS(A)

= 18 mA.

G2-S

001aah004

3

f (MHz)

=0V;

Fig 13. Amplifier A: input admittance as a function of

frequency; typical values

001aah006

−10

(deg)

3

ϕ

rs

|yrs|
(µS)

3

10

f (MHz)

=0V;

001aah005

−10

−10

−1

3

2

ϕ

fs

(deg)

2

10

|yfs|

(mS)

10

1

10 10

V

=5V; V

I

D(A)

DS(A)

= 18 mA.

G2-S

2

10

=4V; V

|yfs|

ϕ

fs

DS(B)

Fig 14. Amplifier A: forward transfer admittance and

phase as a function of frequency; typical values

001aah007

b

, g

os

(mS)

10

os

ϕ

2

10

=4V; V

|yrs|

rs

DS(B)

f (MHz)

=0V;

3

−10

−10

−1

2

2

10

10

1

10 10

V

=5V; V

I

D(A)

DS(A)

= 18 mA.

G2-S

Fig 15. Amplifier A: reverse transfer admittance and

phase as a function of frequency; typical values

1

−1

10

−2

10

10 10

V

=5V; V

I

D(A)

DS(A)

= 18 mA.

G2-S

2

10

=4V; V

b

g

os

os

DS(B)

f (MHz)

3

=0V;

Fig 16. Amplifier A: output admittance as a function of

frequency; typical values

BF1214_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 30 October 2007 10 of 18

NXP Semiconductors

BF1214

Dual N-channel dual gate MOSFET

8.2.1 Scattering parameters for amplifier A

Table 9. Scattering parameters for amplifier A

V

=5V; V

DS(A)

f (MHz) s

Magnitude
(ratio)

40 0.9877 −3.07 3.07 176.73 0.0006 88.01 0.9902 −1.00
100 0.9888 −7.81 3.07 171.67 0.0012 85.54 0.9918 −2.74
200 0.9852 −15.61 3.04 163.23 0.0022 80.05 0.9910 −5.50
300 0.9766 −23.41 3.00 154.91 0.0033 75.66 0.9896 −8.22
400 0.9643 −31.14 2.95 146.63 0.0042 71.57 0.9881 −10.93
500 0.9504 −38.62 2.89 138.57 0.0050 67.10 0.9859 −13.61
600 0.9339 −45.96 2.82 130.61 0.0056 63.38 0.9836 −16.28
700 0.9151 −53.13 2.74 122.79 0.0061 59.74 0.9813 −18.96
800 0.8960 −60.18 2.66 115.17 0.0064 56.44 0.9790 −21.60
900 0.8766 −67.00 2.57 107.66 0.0065 53.53 0.9769 −24.20
1000 0.8564 −73.58 2.49 100.35 0.0066 50.29 0.9753 −26.88

11

G2-S

=4V; I

= 18 mA; V

D(A)

Angle
(deg)

=0V;V

DS(B)

s

21

Magnitude
(ratio)

G1-S(B)

Angle
(deg)

=0V; T

s
Magnitude

(ratio)

=25°C; typical values.

amb

12

Angle
(deg)

s

22

Magnitude
(ratio)

Angle
(deg)

8.2.2 Noise data for amplifier A

Table 10. Noise data for amplifier A

V

=5V; V

DS(A)

f (MHz) NF

400 0.91 0.76 23.60 0.677
800 1.23 0.71 48.91 0.620

G2-S

=4V; I

= 18 mA; T

D(A)

(dB) Γ

min

=25°C; typical values.

amb

opt

(ratio) (deg)

rn (ratio)

BF1214_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 30 October 2007 11 of 18

NXP Semiconductors

8.3 Graphs for amplifier B

BF1214

Dual N-channel dual gate MOSFET

=18mA;

=25°C;

amb

001aah008

V

AGC

(V)

gain

reduction

(dB)

10

20

30

40

50

0

04312

V

=5V; VGG=5V; I

DS(B)

R

=68kΩ; fw= 50 MHz; T

G1(B)

D(nom)(B)

see Figure 24.

Fig 17. Amplifier B: typical gain reduction as a function

of the AGC voltage; typical values

30

110

V

unw

(dBmV)

100

90

80

0504020 3010

V

=5V; VGG=5V; V

DS(B)

R

=68kΩ; fw= 50 MHz; f

G1(B)

I

D(nom)(B)

= 18 mA; T

G2-S(nom)

=25°C; see Figure 24.

amb

001aah009

gain reduction (dB)

=4V;

= 60 MHz;

unw

Fig 18. Amplifier B: unwanted voltage for 1 %

cross modulation as a function of gain
reduction; typical values

001aah010

I

D

(mA)

20

10

0

V

= 5 V; VGG=5V; V

DS(B)

G2-S(nom)

0504020 3010

=4V; R

G1(B)

=68kΩ; I

D(nom)(B)

gain reduction (dB)

= 18 mA; fw= 50 MHz; T

amb

Fig 19. Amplifier B: typical drain current as a function of gain reduction; typical values

=25°C; see Figure 24.

BF1214_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 30 October 2007 12 of 18

NXP Semiconductors

BF1214

Dual N-channel dual gate MOSFET

2

10

bis, g

is

(mS)

10

b

is

1

g

2

10

=4V; V

is

DS(A)

−1

10

−2

10

10 10

V

=5V; V

I

D(B)

DS(B)

= 18 mA.

G2-S

001aah011

3

f (MHz)

=0V;

Fig 20. Amplifier B: input admittance as a function of

frequency; typical values

001aah013

−10

(deg)

3

ϕ

rs

|yrs|
(µS)

3

10

f (MHz)

=0V;

001aah012

−10

−10

−1

3

2

ϕ

fs

(deg)

2

10

2

10

=4V; V

|yfs|

ϕ

fs

DS(A)

|yfs|

(mS)

10

1

10 10

V

=5V; V

I

D(B)

DS(B)

= 18 mA.

G2-S

Fig 21. Amplifier B: forward transfer admittance and

phase as a function of frequency; typical values

001aah014

b

, g

os

(mS)

10

os

2

10

=4V; V

ϕ

|yrs|

rs

DS(A)

f (MHz)

=0V;

3

−10

−10

−1

2

2

10

10

1

10 10

V

=5V; V

I

D(B)

DS(B)

= 18 mA.

G2-S

Fig 22. Amplifier B: reverse transfer admittance and

phase as a function of frequency; typical values

2

10

=4V; V

b

g

os

os

DS(A)

f (MHz)

3

=0V;

1

−1

10

−2

10

10 10

V

=5V; V

I

D(B)

DS(B)

= 18 mA.

G2-S

Fig 23. Amplifier B: output admittance as a function of

frequency; typical values

BF1214_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 30 October 2007 13 of 18

NXP Semiconductors

BF1214

Dual N-channel dual gate MOSFET

8.3.1 Scattering parameters for amplifier B

Table 11. Scattering parameters for amplifier B

V

=5V; V

DS(B)

f (MHz) s

Magnitude
(ratio)

40 0.9836 −2.92 3.06 176.89 0.0005 89.71 0.9897 −0.98
100 0.9890 −7.68 3.06 171.63 0.0012 92.19 0.9920 −2.79
200 0.9869 −15.32 3.03 163.14 0.0023 88.94 0.9914 −5.62
300 0.9801 −23.00 2.99 154.74 0.0034 87.64 0.9902 −8.42
400 0.9704 −30.69 2.94 146.34 0.0045 86.52 0.9889 −11.21
500 0.9595 −38.13 2.88 138.13 0.0056 85.29 0.9869 −14.01
600 0.9458 −45.45 2.81 129.99 0.0066 84.60 0.9845 −16.81
700 0.9300 −52.67 2.73 121.93 0.0075 83.78 0.9818 −19.64
800 0.9132 −59.82 2.65 114.01 0.0085 82.86 0.9786 −22.44
900 0.8959 −66.74 2.56 106.18 0.0093 81.97 0.9750 −25.22
1000 0.8775 −73.43 2.47 98.51 0.0101 80.62 0.9717 −28.10

11

G2-S

=4V; I

= 18 mA; V

D(B)

Angle
(deg)

=0V;V

DS(A)

s

21

Magnitude
(ratio)

G1-S(A)

Angle
(deg)

=0V; T

s
Magnitude

(ratio)

=25°C; typical values.

amb

12

Angle
(deg)

s

22

Magnitude
(ratio)

Angle
(deg)

8.3.2 Noise data for amplifier B

Table 12. Noise data for amplifier B

V

=5V; V

DS(B)

f (MHz) NF

G2-S

=4V; I

= 18 mA; T

D(B)

(dB) Γ

min

=25°C; typical values.

amb

opt

rn (ratio)

(ratio) (deg)

400 0.91 0.76 22.58 0.690
800 1.24 0.71 47.34 0.620

9. Test information

V

AGC

R1
10 kΩ

C1

C3

4.7 nF

L1
≈ 2.2 µH

C4

4.7 nF

R

L

50 Ω

R

GEN

50 Ω

R2
50 Ω

C2

4.7 nF
R

4.7 nF

DUT

G1

V

V

I

GG

V

DS

001aad926

Fig 24. Cross modulation test setup (for one MOSFET)

BF1214_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 30 October 2007 14 of 18

NXP Semiconductors

BF1214

Dual N-channel dual gate MOSFET

10. Package outline

Plastic surface-mounted package; 6 leads SOT363

D

y

pin 1
index

132

e

1

e

E

H

E

AB

X

v M

A

456

Q

A

A

1

b

p

wBM

L

detail X

c

p

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

1.1

mm

0.8

OUTLINE

VERSION

SOT363 SC-88

max

0.1

b

cD

p

0.30

0.20

IEC JEDEC JEITA

0.25

0.10

2.2

1.8

E

1.35

1.3

1.15

REFERENCES

e

e

0.65

H

L

Qywv

p

E

1

2.2

0.45

2.0

0.15

0.25

0.15

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

04-11-08
06-03-16

Fig 25. Package outline SOT363

BF1214_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 30 October 2007 15 of 18

NXP Semiconductors

Dual N-channel dual gate MOSFET

BF1214

11. Abbreviations

Table 13. Abbreviations

Acronym Description

AGC Automatic Gain Control
DC Direct Current
MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor
UHF Ultra High Frequency
VHF Very High Frequency

12. Revision history

Table 14. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BF1214_1 20071030 Product data sheet - -

BF1214_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 30 October 2007 16 of 18

NXP Semiconductors

13. Legal information

13.1 Data sheet status

BF1214

Dual N-channel dual gate MOSFET

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this documentmay have changed since this document was publishedand maydiffer in case of multiple devices.The latest product status

information is available on the Internet at URL

[1][2]

Product status

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shallhave no liability for theconsequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product typenumber(s) and title.A short data sheetis intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not giveany representations or
warranties, expressed or implied, asto the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informationsupplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction of a NXP Semiconductors product can reasonably be expectedto
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134)may cause permanent
damage tothe device. Limitingvalues are stress ratings only and operationof
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

13.4 Trademarks

Notice: All referenced brands,product names,service names and trademarks
are the property of their respective owners.

14. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]

BF1214_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 30 October 2007 17 of 18

NXP Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4

8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5

8.1 Graphs for amplifier A and B . . . . . . . . . . . . . . 6

8.2 Graphs for amplifier A. . . . . . . . . . . . . . . . . . . . 9

8.2.1 Scattering parameters for amplifier A. . . . . . . 11

8.2.2 Noise data for amplifier A . . . . . . . . . . . . . . . . 11

8.3 Graphs for amplifier B. . . . . . . . . . . . . . . . . . . 12

8.3.1 Scattering parameters for amplifier B. . . . . . . 14

8.3.2 Noise data for amplifier B . . . . . . . . . . . . . . . . 14

9 Test information. . . . . . . . . . . . . . . . . . . . . . . . 14

10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15

11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17

14 Contact information. . . . . . . . . . . . . . . . . . . . . 17

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

BF1214

Dual N-channel dual gate MOSFET

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 30 October 2007

Document identifier: BF1214_1