Philips bf1207 Datasheet

BF1207

Dual N-channel dual gate MOSFET

Rev. 01 — 28 July 2005 Product data sheet

1. Product profile

1.1 General description

The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch.

The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC).Integrateddiodesbetweenthegatesandsourceprotectagainstexcessive
input voltage surges. The BF1207 has a SOT363 micro-miniature plastic package.

CAUTION

MSC895

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features

■ Two low noise gain controlled amplifiers in a single package. One with a fully

integrated bias and one with partly integrated bias

■ Internal switch to save external components

■ Superior cross-modulation performance during AGC

■ High forward transfer admittance

■ High forward transfer admittance to input capacitance ratio

1.3 Applications

■ Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High

Frequency (UHF) applications with 5 V supply voltage, such as digital and analog
television tuners and professional communication equipment

Philips Semiconductors

1.4 Quick reference data

Table 1: Quick reference data

Per MOSFET unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

DS

I

D

P

tot

 forward transfer admittance f = 1 MHz

y

fs

C

iss(G1)

C

rss

NF noise figure amplifier A; f = 400 MHz - 1.3 - dB

Xmod cross-modulation input level for k = 1 % at

T

j

[1] Tsp is the temperature at the soldering point of the source lead.

BF1207

Dual N-channel dual gate MOSFET

drain-source voltage DC - - 6 V
drain current DC - - 30 mA
total power dissipation Tsp≤ 107 °C

amplifier A; I
amplifier B; I

=18mA 25 30 40 mS

D

=14mA 26 31 41 mS

D

input capacitance at gate1 f = 100 MHz

amplifier A - 2.2 2.7 pF
amplifier B - 1.9 2.4 pF

reverse transfer capacitance f = 100 MHz - 20 - fF

amplifier B; f = 800 MHz - 1.4 - dB

40 dB AGC

amplifier A 100 105 - dBµV
amplifier B 100 103 - dBµV

junction temperature - - 150 °C

[1]

- - 180 mW

2. Pinning information

Table 2: Discrete pinning

Pin Description Simplified outline Symbol

1 drain (AMP A)
2 source
3 drain (AMP B)
4 gate1 (AMP B)
5 gate2
6 gate1 (AMP A)

132

56

4

G1B

G1A

AMP B

DB

G2

S
DA

AMP A

sym108

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Product data sheet Rev. 01 — 28 July 2005 2 of 22

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3. Ordering information

Table 3: Ordering information

Type number Package

BF1207 - plastic surface mounted package; 6 leads SOT363

4. Marking

Table 4: Marking

Type number Marking code

BF1207 M2*

[1] * = p: Made in Hong Kong.

* = t: Made in Malaysia.
* = W: Made in China.

BF1207

Dual N-channel dual gate MOSFET

Name Description Version

[1]

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per MOSFET

V

DS

I

D

I

G1

I

G2

P

tot

T

stg

T

j

[1] Tsp is the temperature at the soldering point of the source lead.

drain-source voltage DC - 6 V
drain current DC - 30 mA
gate1 current - ±10 mA
gate2 current - ±10 mA
total power dissipation Tsp≤ 107 °C
storage temperature −65 +150 °C
junction temperature - 150 °C

[1]

- 180 mW

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Product data sheet Rev. 01 — 28 July 2005 3 of 22

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BF1207

Dual N-channel dual gate MOSFET

Fig 1. Power derating curve

6. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-sp)

thermal resistance from junction
to soldering point

250

P

tot

(mW)

200

150

100

50

0

0 20015050 100

001aac741

Tsp (°C)

240 K/W

7. Static characteristics

Table 7: Static characteristics

Tj=25°C.

Symbol Parameter Conditions Min Typ Max Unit

Per MOSFET; unless otherwise specified

V

(BR)DSS

V

(BR)G1-SS

V

(BR)G2-SS

V

F(S-G1)

V

F(S-G2)

V

G1-S(th)

V

G2-S(th)

I

DSX

drain-source breakdown voltage V

G1-S=VG2-S

amplifier A 6 - - V

amplifier B 6 - - V
gate1-source breakdown voltage VGS=VDS=0V; I
gate2-source breakdown voltage VGS=VDS=0V; I
forward source-gate1 voltage V
forward source-gate2 voltage V

G2-S=VDS
G1-S=VDS

gate1-source threshold voltage VDS=5V; V
gate2-source threshold voltage VDS=5V; V
drain-source current V

=4V; VDS=5V; RG1=68kΩ

G2-S

amplifier A

amplifier B

=0V; ID=10µA

=10mA 6 - 10 V

G1-S

=10mA 6 - 10 V

G2-S

=0V; I
=0V; I

G2-S
G1-S

= 10 mA 0.5 - 1.5 V

S-G1

= 10 mA 0.5 - 1.5 V

S-G2

=4V; ID= 100 µA 0.3 - 1.0 V
=5V; ID= 100 µA 0.4 - 1.0 V

[1]

13 - 23 mA

[2]

9 - 19 mA

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Product data sheet Rev. 01 — 28 July 2005 4 of 22

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BF1207

Dual N-channel dual gate MOSFET

Table 7: Static characteristics

…continued

Tj=25°C.

Symbol Parameter Conditions Min Typ Max Unit

I

G1-S

I

G2-S

[1] RG1 connects gate1 (A) to VGG = 5 V (see Figure 3).
[2] RG1 connects gate1 (B) to VGG= 0 V (see Figure 3).

I

D

(mA)

gate1 cut-off current V

gate2 cut-off current V

20

16

12

8

(4)

4

0

054231

(6)

(5)

001aac742

(1)

(2)

(3)

VGG (V)

G2-S=VDS(A)

amplifier A; V

amplifier B; V

=4V; V

G2-S

=0V

=5V; V

G1-S(A)

=0V; I

G1-S(A)

G1-S=VDS(A)=VDS(B)

G1B

G2

G1A

DS(B)

D(B)

R

G1

= 0 V - - 50 nA

=0A - - 50 nA

= 0 V; - - 20 nA

DB

S

DA

V

GG

001aac881

(1) I
(2) I
(3) I
(4) I
(5) I
(6) I

Fig 2. Drain currents of MOSFET A and B as function

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; RG1=47kΩ.

D(A)

; RG1=68kΩ.

D(A)

; RG1= 100 kΩ.

D(A)

; RG1= 100 kΩ.

D(B)

; RG1=68kΩ.

D(B)

; RG1=47kΩ.

D(B)

V

DS(A)=VDS(B)

of V

GG

=5V; V

=4V; Tj=25°C.

G2-S

VGG = 5 V: amplifier A is on; amplifier B is off.
VGG = 0 V: amplifier A is off; amplifier B is on.

Fig 3. Functional diagram

Product data sheet Rev. 01 — 28 July 2005 5 of 22

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8. Dynamic characteristics

8.1 Dynamic characteristics for amplifier A

BF1207

Dual N-channel dual gate MOSFET

Table 8: Dynamic characteristics for amplifier A

Common source; T

=25°C; V

amb

=4V; VDS=5V; ID= 18 mA.

G2-S

[1]

Symbol Parameter Conditions Min Typ Max Unit

 forward transfer admittance Tj=25°C253040mS

y

fs

C

iss(G1)

C

iss(G2)

C

oss

C

rss

G

tr

input capacitance at gate1 f = 100 MHz - 2.2 2.7 pF
input capacitance at gate2 f = 1 MHz - 3.5 - pF
output capacitance f = 100 MHz - 0.9 - pF
reverse transfer capacitance f = 100 MHz - 20 - fF
power gain BS=B

S(opt)

; BL=B

L(opt)

f = 200 MHz; GS= 2 mS; GL= 0.5 mS 30 34 38 dB
f = 400 MHz; G
f = 800 MHz; G

NF noise figure f = 11 MHz; G

f = 400 MHz; Y
f = 800 MHz; Y

Xmod cross-modulation input level for k = 1 %; f

f

=60MHz

unw

= 2 mS; GL=1mS 26 30 34 dB

S

= 3.3 mS; GL= 1 mS 21 25 29 dB

S

= 20 mS; BS= 0 S - 3.0 - dB

S

S=YS(opt)
S=YS(opt)

= 50 MHz;

w

- 1.3 - dB

- 1.4 - dB

[2]

at 0 dB AGC 90 - - dBµV
at 10 dB AGC - 90 - dBµV
at 20 dB AGC - 99 - dBµV
at 40 dB AGC 100 105 - dBµV

[1] For the MOSFET not in use: V
[2] Measured in Figure 29 test circuit.

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Product data sheet Rev. 01 — 28 July 2005 6 of 22

G1-S(B)

= 0 V; V

DS(B)

=0V.

Philips Semiconductors

8.1.1 Graphs for amplifier A

BF1207

Dual N-channel dual gate MOSFET

35

I

D

(mA)

30

25

20

15

10

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V

5

0

0 2.01.60.8 1.20.4

=4V.

G2-S

= 3.5 V.

G2-S

=3V.

G2-S

= 2.5 V.

G2-S

=2V.

G2-S

= 1.5 V.

G2-S

=1V.

G2-S

V

=5V; Tj=25°C.

DS(A)

001aac882

(2)
(3)

V

G1-S

(1)

(4)

(5)

(6)

(7)

(V)

Fig 4. Amplifier A: transfer characteristics; typical

values

32

I

D

(mA)

24

16

8

0

0642

(1) V

G1-S(A)

(2) V

G1-S(A)

(3) V

G1-S(A)

(4) V

G1-S(A)

(5) V

G1-S(A)

(6) V

G1-S(A)

(7) V

G1-S(A)

(8) V

G1-S(A)

(9) V

G1-S(A)

V

DS(A)

= 1.9 V.
= 1.8 V.
= 1.7 V.
= 1.6 V.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
= 1.1 V.

=5V; V

=4V; Tj=25°C.

G2-S

001aaa883

(1)

(2)
(3)

(4)
(5)
(6)
(7)

(8)
(9)

VDS (V)

Fig 5. Amplifier A: output characteristics; typical

values

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Product data sheet Rev. 01 — 28 July 2005 7 of 22

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BF1207

Dual N-channel dual gate MOSFET

40

y

fs

(mS)

30

20

10

(7)

0

03224816

(1) V

G2-S

(2) V

G2-S

(3) V

G2-S

(4) V

G2-S

(5) V

G2-S

(6) V

G2-S

(7) V

G2-S

V

DS(A)

(6)

=4V.
= 3.5 V.
=3V.
= 2.5 V.
=2V.
= 1.5 V.
=1V.

=5V; Tj=25°C.

(5)

001aac884

(1)

(2)

(3)

(4)

ID (mA)

Fig 6. Amplifier A: forward transfer admittance as a

function of drain current; typical values

V

GG

001aac885

(1)

(2)

(3)
(4)
(5)

(6)
(7)

VDS (V)

=

25

I

D

(mA)

20

15

10

5

0

0642

(1) R

G1(A)

(2) R

G1(A)

(3) R

G1(A)

(4) R

G1(A)

(5) R

G1(A)

(6) R

G1(A)

(7) R

G1(A)

V

G2-S

=39kΩ.
=47kΩ.
=68kΩ.
=82kΩ.
= 100 kΩ.
= 120 kΩ.
= 150 kΩ.

=4V; Tj=25°C.

Fig 7. Amplifier A: drain current as a function of V

and VGG; typical values

DS

001aac886

V

supply

(V)

V

=4V, Tj=25°C, R

G2-S

20

I

D

(mA)

16

12

8

4

0

054231

=68kΩ (connected to ground); see Figure 3.

G1(B)

Fig 8. AmplifierA: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical values

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Product data sheet Rev. 01 — 28 July 2005 8 of 22

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BF1207

Dual N-channel dual gate MOSFET

120

V

unw

(dBµV)

110

100

90

80

0504020 3010

V

DS(A)=VDS(B)

f

= 60 MHz; T

unw

=5V; V

G1-S(B)

=25°C; see Figure 29.

amb

001aac887

gain reduction (dB)

=0V; fw= 50 MHz;

Fig 9. Amplifier A: unwanted voltage for 1 %

cross-modulation as a function of gain
reduction; typical values

32

I

D

(mA)

0

gain

reduction

(dB)

10

20

30

40

50

04312

V

DS(A)=VDS(B)

=5V; V

G1-S(B)

001aac888

V

(V)

AGC

= 0 V; f = 50 MHz;

see Figure 29.

Fig 10. Amplifier A: gain reduction as a function of

AGC voltage; typical values

001aac889

24

16

8

0

V

DS(A)=VDS(B)

=5V; V

= 0 V; f = 50 MHz; T

G1-S(B)

0504020 3010

=25°C; see Figure 29.

amb

gain reduction (dB)

Fig 11. Amplifier A: drain current as a function of gain reduction; typical values

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Product data sheet Rev. 01 — 28 July 2005 9 of 22

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BF1207

Dual N-channel dual gate MOSFET

2

10

bis, g

is

(mS)

10

b

is

1

g

is

−1

10

−2

10

10 10

V

=5V; V

I

D(A)

DS(A)

= 18 mA.

G2-S

2

10

=4V; V

DS(B)=VG1-S(B)

001aac890

3

f (MHz)

=0V;

Fig 12. Amplifier A: input admittance as a function of

frequency; typical values

001aac892

−10

(deg)

−10

3

ϕ

rs

2

|yrs|
(µS)

3

10

ϕ

2

10

rs

f (MHz)

001aac891

=0V;

3

−10

(deg)

−10

−1

2

ϕ

fs

2

10

|yfs|

(mS)

10

1

10 10

V

=5V; V

I

D(A)

DS(A)

= 18 mA.

G2-S

|yfs|

2

10

=4V; V

ϕ

fs

DS(B)=VG1-S(B)

Fig 13. Amplifier A: forward transfer admittance and

phase as a function of frequency; typical values

001aac893

b

, g

os

(mS)

10

os

b

1

os

|yrs|

=0V;

−10

−1

3

10

1

10 10

V

=5V; V

I

D(A)

DS(A)

= 18 mA.

G2-S

2

10

=4V; V

f (MHz)

DS(B)=VG1-S(B)

Fig 14. Amplifier A: reverse transfer admittance and

phase as a function of frequency: typical values

g

−1

10

−2

10

10 10

V
I

D(A)

DS(A)

=5V; V

= 18 mA.

G2-S

=4V; V

os

2

10

DS(B)=VG1-S(B)

f (MHz)

3

=0V;

Fig 15. Amplifier A: output admittance as a function of

frequency; typical values

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Product data sheet Rev. 01 — 28 July 2005 10 of 22

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8.1.2 Scattering parameters for amplifier A

Table 9: Scattering parameters for amplifier A

V

=5V; V

DS(A)

f
(MHz)

50 0.987 −4.169 2.87 175.5 0.0008 83.82 0.992 −1.42
100 0.983 −8.109 2.95 171.14 0.0015 82.08 0.992 −2.86
200 0.976 −15.97 2.93 162.44 0.0028 77.50 0.990 −5.66
300 0.966 −23.844 2.89 153.77 0.0041 73.45 0.989 −8.49
400 0.952 −31.575 2.84 145.23 0.0053 69.42 0.986 −11.28
500 0.935 −35.225 2.78 136.82 0.0063 65.72 0.984 −14.03
600 0.917 −46.678 2.72 128.50 0.0072 61.48 0.981 −16.80
700 0.898 −54.094 2.65 120.44 0.0079 58.05 0.977 −19.55
800 0.876 −61.205 2.57 112.33 0.0084 52.74 0.974 −22.32
900 0.852 −68.299 2.49 104.32 0.0089 48.61 0.970 −25.10
1000 0.826 −75.321 2.41 96.42 0.0091 43.86 0.967 −27.88

G2-S

s

11

Magnitude
(ratio)

=4V; I

Angle
(deg)

= 18 mA; V

D(A)

DS(B)

s

21

Magnitude
(ratio)

=0V;V

Angle
(deg)

BF1207

Dual N-channel dual gate MOSFET

=0V; T

G1-S(B)

s

12

Magnitude
(ratio)

= 25°C; typical values.

amb

s

22

Angle
(deg)

Magnitude
(ratio)

Angle
(deg)

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Product data sheet Rev. 01 — 28 July 2005 11 of 22

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8.2 Dynamic characteristics for amplifier B

BF1207

Dual N-channel dual gate MOSFET

Table 10: Dynamic characteristics for amplifier B

Common source; T

=25°C; V

amb

=4V; VDS=5V; ID= 14 mA.

G2-S

[1]

Symbol Parameter Conditions Min Typ Max Unit

 forward transfer admittance Tj=25°C263141mS

y

fs

C

iss(G1)

C

iss(G2)

C

oss

C

rss

G

tr

input capacitance at gate1 f = 100 MHz - 1.8 2.3 pF
input capacitance at gate2 f = 1 MHz - 3.5 - pF
output capacitance f = 100 MHz - 0.8 - pF
reverse transfer capacitance f = 100 MHz - 20 - fF
power gain BS=B

S(opt)

; BL=B

L(opt)

f = 200 MHz; GS= 2 mS; GL= 0.5 mS 30 34 38 dB
f = 400 MHz; G
f = 800 MHz; G

NF noise figure f = 11 MHz; G

f = 400 MHz; Y
f = 800 MHz; Y

Xmod cross-modulation input level for k=1%;f

= 2 mS; GL=1mS 27 31 35 dB

S

= 3.3 mS; GL= 1 mS 23 27 31 dB

S

= 20 mS; BS=0S - 5 - dB

S

S=YS(opt)
S=YS(opt)

= 50 MHz; f

w

=60MHz

unw

- 1.3 - dB

- 1.4 - dB

[2]

at 0 dB AGC 90 - - dBµV
at 10 dB AGC - 88 - dBµV
at 20 dB AGC - 94 - dBµV
at 40 dB AGC 100 103 - dBµV

[1] For the MOSFET not in use: V
[2] Measured in Figure 30 test circuit.

G1-S(A)

= 0 V; V

DS(A)

=0 V.

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Product data sheet Rev. 01 — 28 July 2005 12 of 22

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8.2.1 Graphs for amplifier B

BF1207

Dual N-channel dual gate MOSFET

(2)

001aac894

(1)

(3)

(4)

(5)

(6)

(7)

V

(V)

G1-S

30

I

D

(mA)

20

10

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V

0

021.60.8 1.20.4

=4V.

G2-S

= 3.5 V.

G2-S

=3V.

G2-S

= 2.5 V.

G2-S

=2V.

G2-S

= 1.5 V.

G2-S

=1V.

G2-S

V

DS(B)

=5V; V

=0V; Tj=25°C.

G1-S(A)

Fig 16. Amplifier B: transfer characteristics; typical

values

32

I

D

(mA)

24

16

8

0

0642

(1) V

G1-S(B)

(2) V

G1-S(B)

(3) V

G1-S(B)

(4) V

G1-S(B)

(5) V

G1-S(B)

(6) V

G1-S(B)

(7) V

G1-S(B)

V

G2-S

= 1.7 V.
= 1.6 V.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
= 1.1 V.

=4V; V

=0V; Tj=25°C.

G1-S(A)

001aac895

(1)
(2)

(3)
(4)

(5)
(6)
(7)

VDS (V)

Fig 17. Amplifier B: output characteristics; typical

values

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Product data sheet Rev. 01 — 28 July 2005 13 of 22

Philips Semiconductors

BF1207

Dual N-channel dual gate MOSFET

40

y

fs

(mS)

30

20

10

(6)

(7)

0

03224816

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V

V

G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(B)

=4V.
= 3.5 V.
=3V.
= 2.5 V.
=2V.
= 1.5 V.
=1V.

=5V; V

(5)

G1-S(A)

(4)

=0V; Tj=25°C.

001aac896

(1)

(2)

(3)

ID (mA)

Fig 18. Amplifier B: forward transfer admittance as a

function of drain current; typical values

001aac897

(1)
(2)
(3)
(4)
(5)

V

(V)

G2-S

I

D

(mA)

20

16

12

8

4

0

054231

(1) VDS=5V.
(2) VDS= 4.5 V.
(3) VDS=4V.
(4) VDS= 3.5 V.
(5) VDS=3V.

V

=0V; Tj=25°C.

G1-S(A)

Fig 19. Amplifier B: drain current as function of gate2

voltage; typical values

20

I

D(A)

(mA)

16

12

8

4

0

0642

V

DS(B)

=5V; V

=0V; Tj=25°C. V

G1-S(A)

001aac898

VDS (V)

Fig 20. Amplifier B: drain current as a function of drain

source voltage; typical values

16

I

D

(mA)

12

8

4

0

−40 0−20 −10−30

DS(B)

=5V; V

G2-S

=4V; V

G1-S(A)

001aac899

IG1 (µA)

=0V; Tj=25°C.

Fig 21. Amplifier B: drain current as a function of gate1

current; typical values

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 28 July 2005 14 of 22

Philips Semiconductors

BF1207

Dual N-channel dual gate MOSFET

120

V

unw

(dBµV)

110

100

90

80

V
R
f

unw

0604020

=5V; VGG=5V; V

DS(B)

= 150 kΩ (connected to VGG); fw= 50 MHz;

G1(B)

= 60 MHz; T

amb

DS(A)=VG1-S(A)

=25°C; see Figure 30.

001aac900

gain reduction (dB)

=0V;

Fig 22. Amplifier B: unwanted voltage for 1 %

cross-modulation as a function of gain
reduction; typical values

20

I

D

(mA)

16

0

gain

reduction

(dB)

10

20

30

40

50

04312

V

=5V; VGG=5V; V

DS(B)

R

= 150 kΩ (connected to VGG); f = 50 MHz;

G1(B)

T

=25°C; see Figure 30.

amb

DS(A)=VG1-S(A)

001aac901

V

(V)

AGC

=0V;

Fig 23. Amplifier B: typical gain reduction as a function

of AGC voltage; typical values

001aac902

12

8

4

0

V

=5V; VGG=5V; V

DS(B)

0604020

DS(A)=VG1-S(A)

=0V; R

= 150 kΩ (connected to VGG); f = 50 MHz; T

G1(B)

gain reduction (dB)

=25°C; see

amb

Figure 30.

Fig 24. Amplifier B: drain current as a function of gain reduction; typical values

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 28 July 2005 15 of 22

Philips Semiconductors

BF1207

Dual N-channel dual gate MOSFET

2

10

bis, g

is

(mS)

10

b

is

1

g

2

10

=4V; V

is

DS(A)=VG1-S(A)

−1

10

−2

10

10 10

V

=5V; V

I

D(B)

DS(B)

= 14 mA.

G2-S

001aac903

3

f (MHz)

=0V;

Fig 25. Amplifier B: input admittance as a function of

frequency; typical values

001aac905

−10

ϕ

(deg)

−10

3

rs

2

|yrs|
(µS)

3

10

2

10

ϕ

rs

f (MHz)

001aac904

=0V;

3

−10

(deg)

−10

−1

2

ϕ

fs

2

10

2

10

=4V; V

|yfs|

ϕ

fs

DS(A)=VG1-S(A)

|yfs|

(mS)

10

1

10 10

V

=5V; V

I

D(B)

DS(B)

= 14 mA.

G2-S

Fig 26. Amplifier B: forward transfer admittance and

phase as a function of frequency; typical values

001aac906

b

os

(mS)

10

, g

os

b

1

os

|yrs|

g

−1

10

1

10 10

V

=5V; V

I

D(B)

DS(B)

= 14 mA.

G2-S

2

10

=4V; V

f (MHz)

DS(A)=VG1-S(A)

=0V;

−10

−1

3

Fig 27. Amplifier B: reverse transfer admittance and

phase as a function of frequency; typical values

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

10

−2

10

10 10

V
I

D(B)

DS(B)

=5V; V

= 14 mA.

G2-S

=4V; V

Fig 28. Amplifier B: output admittance as a function of

frequency; typical values

os

2

10

DS(A)=VG1-S(A)

f (MHz)

3

=0V;

Product data sheet Rev. 01 — 28 July 2005 16 of 22

Philips Semiconductors

8.2.2 Scattering parameters for amplifier B

Table 11: Scattering parameters for amplifier B

V

=5V; V

DS(B)

f
(MHz)

50 0.993 −3.018 3.07 176.04 0.0004 95.97 0.991 −1.39
100 0.992 −6.186 3.07 172.05 0.0011 90.33 0.990 −2.79
200 0.987 −12.43 3.09 164.13 0.0024 85.03 0.988 −5.49
300 0.979 −18.60 3.02 156.28 0.0036 82.94 0.986 −8.21
400 0.969 −24.62 2.99 148.48 0.0046 81.97 0.983 −10.91
500 0.957 −30.72 2.95 140.69 0.0056 81.03 0.980 −13.63
600 0.943 −36.71 2.90 132.87 0.0065 79.77 0.977 −16.40
700 0.927 −42.77 2.86 125.21 0.0074 79.04 0.973 −19.13
800 0.907 −48.91 2.79 117.22 0.0082 79.42 0.969 −21.93
900 0.885 −54.77 2.736 109.29 0.0086 75.47 0.964 −24.85
1000 0.858 −61.01 2.675 101.18 0.0092 73.48 0.958 −27.75

G2-S

s

11

Magnitude
(ratio)

=4V; I

Angle
(deg)

= 14 mA; V

D(B)

s
Magnitude

(ratio)

BF1207

Dual N-channel dual gate MOSFET

=0V;V

DS(A)

21

Angle
(deg)

=0V; T

G1-S(A)

s

12

Magnitude
(ratio)

= 25°C; typical values.

amb

s

22

Angle
(deg)

Magnitude
(ratio)

Angle
(deg)

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 28 July 2005 17 of 22

Philips Semiconductors

9. Test information

BF1207

Dual N-channel dual gate MOSFET

V

AGC

10 kΩ

4.7 nF

4.7 nF

4.7 nF

50 Ω

R

G1

V

GG

5 V

R

50 Ω

GEN
50 Ω

V

i

Fig 29. Cross-modulation test set-up for amplifier A

V

4.7 nF

G1B

G2

BF1207

DB

S

G1A DA

AGC

10 kΩ

G1B

V

V

DS(B)

5V

DS(A)

5 V

DB

4.7 nF

L1

2.2 µH

4.7 nF

L2

2.2 µH

4.7 nF

V

DS(B)

5V

001aac907

4.7 nF

L1

2.2 µH

4.7 nF

R

L

50 Ω

R

GEN
50 Ω

V

4.7 nF

50 Ω

i

4.7 nF

50 Ω

G2

G1A DA

R

G1

V

GG

0 V

BF1207

S

L2

2.2 µH

4.7 nF

V

DS(A)

5 V

R
50 Ω

001aac908

L

Fig 30. Cross-modulation test set-up for amplifier B

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 28 July 2005 18 of 22

Philips Semiconductors

BF1207

Dual N-channel dual gate MOSFET

10. Package outline

Plastic surface mounted package; 6 leads SOT363

D

y

pin 1
index

132

e

1

e

E

H

E

AB

X

v M

A

456

Q

A

A

1

b

p

wBM

L

detail X

c

p

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

1.1

mm

0.8

OUTLINE

VERSION

SOT363 SC-88

max

0.1

b

cD

p

0.30

0.20

IEC JEDEC JEITA

0.25

0.10

2.2

1.8

E

1.35

1.3

1.15

REFERENCES

e

e

0.65

HEL

1

2.2

2.0

0.45

0.15

Qywv

p

0.25

0.15

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
04-11-08

Fig 31. Package outline SOT363

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 28 July 2005 19 of 22

Philips Semiconductors

Dual N-channel dual gate MOSFET

BF1207

11. Revision history

Table 12: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

BF1207_1 20050728 Product data sheet - 9397 750 14955 -

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 28 July 2005 20 of 22

Philips Semiconductors

12. Data sheet status

BF1207

Dual N-channel dual gate MOSFET

Level Data sheet status

I Objective data Development This data sheet contains data from the objective specification for product development. Philips

II Preliminary data Qualification Thisdata sheet contains data from the preliminary specification. Supplementary data will be published

III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

13. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

[2] [3]

Definition

Semiconductors reserves the right to change the specification in any manner without notice.

at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply.Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, andmakes no representations or warranties thatthese products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.

15. Trademarks

14. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors

Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.

16. Contact information

For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 28 July 2005 21 of 22

Philips Semiconductors

17. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4

8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6

8.1 Dynamic characteristics for amplifier A. . . . . . . 6

8.1.1 Graphs for amplifier A. . . . . . . . . . . . . . . . . . . . 7

8.1.2 Scattering parameters for amplifier A. . . . . . . 11

8.2 Dynamic characteristics for amplifier B. . . . . . 12

8.2.1 Graphs for amplifier B. . . . . . . . . . . . . . . . . . . 13

8.2.2 Scattering parameters for amplifier B. . . . . . . 17

9 Test information. . . . . . . . . . . . . . . . . . . . . . . . 18

10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 19

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 20

12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 21

13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

14 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

16 Contact information . . . . . . . . . . . . . . . . . . . . 21

BF1207

Dual N-channel dual gate MOSFET

© Koninklijke Philips Electronics N.V. 2005

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 28 July 2005

Document number: 9397 750 14955