Philips bf1206f Datasheet

BF1206F

Dual N-channel dual gate MOSFET

Rev. 01 — 30 January 2006 Product data sheet

1. Product profile

1.1 General description

The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared
source and gate2 leads.

The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC).Integrateddiodesbetweenthegatesandsourceprotectagainstexcessive
input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic
package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features

■ Two low noise gain controlled amplifiers in a single package

■ Superior cross-modulation performance during AGC

■ High forward transfer admittance

■ High forward transfer admittance to input capacitance ratio

■ Suited for 3 volt applications

1.3 Applications

■ Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High

Frequency (UHF) applications with 3 V supply voltage, such as digital and analog
television tuners

Philips Semiconductors

1.4 Quick reference data

Table 1: Quick reference data

Per MOSFET unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

DS

I

D

| forward transfer admittance ID=4mA

|y

fs

C

iss(G1)

NF noise figure I

Xmod cross modulation input level for k = 1 % at

BF1206F

Dual N-channel dual gate MOSFET

drain-source voltage (DC) - - 6 V
drain current (DC) - - 30 mA

amplifier A 17 22 32 mS
amplifier B 17 22 32 mS

input capacitance at gate1 ID= 4 mA; f = 100 MHz

amplifier A - 2.4 2.9 pF
amplifier B - 1.7 2.2 pF

= 4 mA

D

amplifier A; f = 400 MHz - 1.0 1.6 dB
amplifier B; f = 800 MHz - 1.0 1.6 dB

40 dB AGC

amplifier A 92 97 - dBµV
amplifier B 93 98 - dBµV

2. Pinning information

Table 2: Discrete pinning

Pin Description Simplified outline Symbol

1 gate1 (AMP A)
2 source
3 gate1 (AMP B)
4 drain (AMP B)
5 drain (AMP A)
6 gate2

3. Ordering information

Table 3: Ordering information

Type number Package

BF1206F - plastic surface mounted package; 6 leads SOT666

456

123

G1A

G1B

AMP A

G2

S

AMP B

DA

DB

sym111

Name Description Version

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 2 of 20

Philips Semiconductors

4. Marking

Table 4: Marking

Type number Marking code

BF1206F 2N

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per MOSFET

V

DS

I

D

I

G1

I

G2

P

tot

T

stg

T

j

[1] Tsp is the temperature at the solder point of the source lead.

BF1206F

Dual N-channel dual gate MOSFET

drain-source voltage (DC) - 6 V
drain current (DC) - 30 mA
gate1 current - ±10 mA
gate2 current - ±10 mA
total power dissipation Tsp≤ 107 °C
storage temperature −65 +150 °C
junction temperature - 150 °C

[1]

- 180 mW

Fig 1. Power derating curve

6. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-sp)

thermal resistance from junction
to solder point

250

P

tot

(mW)

200

150

100

50

0

0 20015050 100

001aac193

Tsp (˚C)

240 K/W

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 3 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

7. Static characteristics

Table 7: Static characteristics

Tj=25°C.

Symbol Parameter Conditions Min Typ Max Unit

Per MOSFET; unless otherwise specified

V

(BR)DSS

V

(BR)G1-SS

V

(BR)G2-SS

V

F(S-G1)

V

F(S-G2)

V

G1-S(th)

V

G2-S(th)

I

DSX

I

G1-S

I

G2-S

drain-source breakdown voltage V

G1-S=VG2-S

amplifier A 6 - - V

amplifier B 6 - - V
gate1-source breakdown voltage VGS=VDS=0V; I
gate2-source breakdown voltage VGS=VDS=0V; I
forward source-gate1 voltage V
forward source-gate2 voltage V

G2-S=VDS
G1-S=VDS

gate1-source threshold voltage VDS=5V; V
gate2-source threshold voltage VDS=5V; V
drain cut-off current V

= 2.5 V; VDS= 2.8 V

G2-S

amplifier A; RG1= 270 kΩ 3 - 6.5 mA

amplifier B; R
gate1 cut-off current V

G1-S

=5V; V
amplifier A - - 50 nA
amplifier B - - 50 nA

gate2 cut-off current V

G2-S

=5V; V

=0V; ID=10µA

=10mA 6 - 10 V

G1-S

=10mA 6 - 10 V

G2-S

=0V; I
=0V; I

G2-S
G1-S

G1

G2-S=VDS

G1-S=VDS

= 10 mA 0.5 - 1.5 V

S-G1

= 10 mA 0.5 - 1.5 V

S-G2

=4V; ID= 100 µA 0.3 - 1.0 V
=5V; ID= 100 µA 0.35 - 1.0 V

[1]

= 220 kΩ 3 - 6.5 mA

=0V

=0V; - - 20 nA

[1] RG1 connects gate 1 to VGG= 2.8 V.

8. Dynamic characteristics

8.1 Dynamic characteristics for amplifier A

Table 8: Dynamic characteristics for amplifier A

Common source; T

Symbol Parameter Conditions Min Typ Max Unit

| forward transfer admittance Tj=25°C172232mS

|y

fs

C

iss(G1)

C

iss(G2)

C

oss

C

rss

G

tr

input capacitance at gate1 f = 100 MHz
input capacitance at gate2 f = 100 MHz
output capacitance f = 100 MHz
reverse transfer capacitance f = 100 MHz
transducer power gain BS=B

NF noise figure f = 11 MHz; G

=25°C; V

amb

= 2.5 V; VDS= 2.8 V; ID= 4 mA.

G2-S

; BL=B

S(opt)

f = 200 MHz; GS= 2 mS; GL= 0.5 mS - 31 - dB
f = 400 MHz; G
f = 800 MHz; G

= 20 mS; BS= 0 - 3.5 - dB

S

f = 400 MHz; Y
f = 800 MHz; Y

S
S

[1]

- 2.4 2.9 pF

[1]

- 3.2 - pF

[1]

- 1.1 - pF

[1]

-1530fF

L(opt)

= 2 mS; GL=1mS - 28 - dB

S

= 3.3 mS; GL= 1 mS - 23 - dB

S

= Y

S(opt)

= Y

S(opt)

[1]

- 1.0 1.6 dB

- 1.1 1.7 dB

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 4 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

Table 8: Dynamic characteristics for amplifier A

Common source; T

=25°C; V

amb

= 2.5 V; VDS= 2.8 V; ID= 4 mA.

G2-S

…continued

Symbol Parameter Conditions Min Typ Max Unit

Xmod cross modulation input level for k = 1 %; fw= 50 MHz;

f

=60MHz

unw

[2]

at 0 dB AGC 88 - - dBµV
at 10 dB AGC - 85 - dBµV
at 40 dB AGC 92 97 - dBµV

[1] Calculated from measured S-parameters.
[2] Measured in Figure 32 test circuit.

8.1.1 Graphs for amplifier A

001aad897

(2)

(3)

(4)

I

D

(mA)

15

10

(1) (2)

001aad896

(3)

I

D

(mA)

16

12

8

(1)

(1) V
(2) V
(3) V
(4) V

5

0

0 2.01.60.8 1.20.4

= 2.5 V.

G2-S

= 2.0 V.

G2-S

= 1.5 V.

G2-S

= 1.0 V.

G2-S

V

= 2.8 V; Tj=25°C.

DS(A)

V

(4)

G1−S

(V)

Fig 2. Amplifier A: transfer characteristics; typical

values

(5)

4

0

04312

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V

= 1.4 V.

G1-S(A)

= 1.3 V.

G1-S(A)

= 1.2 V.

G1-S(A)

= 1.0 V.

G1-S(A)

= 0.9 V.

G1-S(A)

= 0.85 V.

G1-S(A)

= 0.8 V.

G1-S(A)

V

= 2.5 V; Tj=25°C.

G2-S

(6)
(7)

VDS (V)

Fig 3. Amplifier A: output characteristics; typical

values

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 5 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

100

I

G1

(µA)

80

60

40

20

(1) V
(2) V
(3) V
(4) V

0

0 2.52.01.0 1.50.5

= 2.5 V.

G2-S

= 2.0 V.

G2-S

= 1.5 V.

G2-S

= 1.0 V.

G2-S

V

= 2.8 V; Tj=25°C.

DS(A)

001aad898

(1)

(2)

(3)

(4)

V

(V)

G1−S

Fig 4. Amplifier A: gate1 current as a function of

gate1 voltage; typical values

40

Y



fs

(mS)

30

20

10

0

0161248

(1) V
(2) V
(3) V
(4) V

= 2.5 V.

G2-S

= 2.0 V.

G2-S

= 1.5 V.

G2-S

= 1.0 V.

G2-S

V

= 2.8 V; Tj=25°C.

DS(A)

001aad899

(1)
(2)

(3)(4)

ID (mA)

Fig 5. Amplifier A: forward transfer admittance as a

function of drain current; typical values

16

I

D

(mA)

12

8

4

0

0302010

V

DS(A)

= 2.8 V; V

G2-S

= 2.5 V, T

001aad900

IG1 (µA)

=25°C. V

amb

Fig 6. AmplifierA: drain current as a function of gate1

current; typical values

6

I

D

(mA)

4

2

0

0321

DS(A)

= 2.8 V; VG2= 2.5 V; R

G1(A)

001aad901

VGG (V)

= 270 kΩ; see

Figure 32.

Fig 7. AmplifierA: drain current as a function of gate1

supply voltage (=V

); typical values

GG

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 6 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

10

I

D

(mA)

8

6

4

2

0

04312

001aad902

(1)

(2)

(3)
(4)
(5)

(6)
(7)

(8)
(9)

VGG = VDS (V)

(1) RG1= 100 kΩ.
(2) RG1= 120 kΩ.
(3) RG1= 150 kΩ.
(4) RG1= 180 kΩ.
(5) RG1= 220 kΩ.
(6) RG1= 270 kΩ.
(7) RG1= 330 kΩ.
(8) RG1= 390 kΩ.
(9) RG1= 470 kΩ.

V

= 2.5 V; Tj=25°C; see Figure 32.

G2-S

Fig 8. Amplifier A: drain current as a function of V

and VGG; typical values

6

I

D

(mA)

4

2

0

04312

(1)

(2)

(3)

(4)

(5)

V

G2−S

(1) VGG= 1.0 V
(2) VGG= 1.5 V
(3) VGG= 2.0 V
(4) VGG= 2.5 V
(5) VGG= 3.0 V

Tj=25°C; R

= 270 kΩ (connected to VGG);

G1(A)

see Figure 32.

Fig 9. AmplifierA: drain current as a function of gate2

DS

voltage; typical values

001aad903

(V)

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 7 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

001aad904

V

(V)

AGC

= 4 mA;

gain

reduction

(dB)

0

10

20

30

40

50

0321

V

= 2.8 V; VGG= 2.8 V; I

DS(A)

T

=25°C.

amb

D(nom)

Fig 10. Amplifier A: typical gain reduction as a function

of the AGC voltage; typical values

5

I

D

(mA)

4

110

V

unw

(dBµV)

100

90

80

0604020

V
fw= 50 MHz; f
T

= 2.8 V; VGG= 2.8 V; V

DS(A)

unw

amb

=25°C.

= 60 MHz; I

G2(nom)

D(nom)

001aad905

gain reduction (dB)

= 2.5 V;

= 4 mA;

Fig 11. Amplifier A: unwanted voltage for 1 %

cross-modulation as a function of gain
reduction; typical values

001aad906

3

2

1

0

V

= 2.8 V; VGG= 2.8 V; V

DS(A)

0604020

= 2.5 V; R

G2(nom)

= 270 kΩ; f = 50 MHz; T

G1(A)

gain reduction (dB)

amb

=25°C.

Fig 12. Amplifier A: typical drain current as a function of gain reduction; typical values

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 8 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

f (MHz)

DS(B)

001aad907

3

=0V;

2

10

bis, g

is

(mS)

10

b

is

1

g

−1

10

−2

10

10 10

V

= 2.8 V; V

I

D(A)

DS(A)

= 4 mA.

G2-S

is

2

10

= 2.5 V; V

Fig 13. Amplifier A: input admittance and phase as a

function of frequency; typical values

10

Yrs

(µS)

2

ϕ

rs

Yrs

10

001aad909

10

10

2

ϕ

rs

(deg)

f (MHz )

DS(B)

001aad908

=0V;

−10

−10

−1

3

2

ϕ

fs

(deg)

2

10

Yfs

(mS)

10

1

10 10

V

= 2.8 V; V

I

D(A)

DS(A)

= 4 mA.

G2-S

Yfs

ϕ

fs

2

10

= 2.5 V; V

Fig 14. Amplifier A: forward transfer admittance and

phase as a function of frequency; typical values

001aad910

b

os

(mS)

10

, g

os

b

1

os

−1

10

g

os

1

10 10

V

= 2.8 V; V

DS(A)

I

= 4 mA.

D(A)

G2-S

2

10

= 2.5 V; V

f (MHz )

DS(B)

=0V;

1

3

Fig 15. Amplifier A: reverse transfer admittance and

phase as a function of frequency: typical values

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

−2

10

10 10

V

= 2.8 V; V

DS(A)

I

= 4 mA.

D(A)

G2-S

2

10

= 2.5 V; V

f (MHz)

DS(B)

=0V;

3

Fig 16. Amplifier A: output admittance and phase as a

function of frequency; typical values

Product data sheet Rev. 01 — 30 January 2006 9 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

8.1.2 Scattering parameters for amplifier A

Table 9: Scattering parameters for amplifier A

V

= 2.8 V; V

DS(A)

f (MHz) s

11

Magnitude
(ratio)

50 0.9923 −4.11 2.18 174.68 0.00038 102.27 0.995 −1.83
100 0.9930 −8.29 2.18 169.51 0.00080 85.65 0.996 −3.75
200 0.9877 −16.41 2.16 159.20 0.00161 80.93 0.995 −7.49
300 0.9802 −24.48 2.12 149.04 0.00233 76.76 0.994 −11.22
400 0.9705 −32.34 2.07 138.99 0.00303 73.21 0.992 −14.96
500 0.9596 −39.91 2.01 129.15 0.00354 69.83 0.989 −18.68
600 0.9483 −47.34 1.94 119.45 0.00394 67.19 0.987 −22.39
700 0.9361 −54.59 1.87 109.95 0.00426 65.26 0.984 −26.11
800 0.9239 −61.64 1.79 100.69 0.00453 63.89 0.981 −29.82
900 0.9129 −68.28 1.72 91.66 0.00457 64.06 0.979 −33.57
1000 0.9018 −74.57 1.64 82.86 0.00456 65.60 0.976 −37.31

G2-S

= 2.5 V; I

D(A)

Angle
(deg)

= 4 mA; V

s

21

Magnitude
(ratio)

DS(B)

=0V;V

G1-S(B)

Angle
(deg)

=0V; T

s

12

Magnitude
(ratio)

= 25°C; typical values.

amb

Angle
(deg)

s

22

Magnitude
(ratio)

Angle
(deg)

8.2 Noise data for amplifier A

Table 10: Noise data for amplifier A

V

= 2.8 V; V

DS(A)

f (MHz) NF

G2-S

= 2.5 V; I

min

= 4 mA.

D(A)

(dB) Γ

opt

rn (ratio)

ratio (deg)

400 1.0 0.78 26 0.84
800 1.1 0.87 53 0.87

8.3 Dynamic characteristics for amplifier B

Table 11: Dynamic characteristics for amplifier B

Common source; T

Symbol Parameter Conditions Min Typ Max Unit

| forward transfer admittance Tj=25°C - 22 - mS

|y

fs

C

iss(G1)

C

iss(G2)

C

oss

C

rss

G

tr

input capacitance at gate1 f = 100 MHz
input capacitance at gate2 f = 100 MHz
output capacitance f = 100 MHz
reverse transfer capacitance f = 100 MHz
transducer power gain BS=B

NF noise figure f = 11 MHz; G

=25°C; V

amb

= 2.5 V; VDS= 2.8 V; ID= 4 mA.

G2-S

; BL=B

S(opt)

f = 200 MHz; GS= 2 mS; GL= 0.5 mS - 32 - dB
f = 400 MHz; G
f = 800 MHz; G

f = 400 MHz; Y
f = 800 MHz; Y

S
S

= 20 mS; BS= 0 - 4.5 - dB

S

= Y

S

= Y

S

[1]

- 1.7 2.2 pF

[1]

- 4.0 - pF

[1]

- 0.85 - pF

[1]

-3045fF

L(opt)

[1]

= 2 mS; GL=1mS - 29 - dB
= 3.3 mS; GL= 1 mS - 25 - dB

S(opt)
S(opt)

- 0.9 1.5 dB

- 1.0 1.6 dB

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 10 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

Table 11: Dynamic characteristics for amplifier B

Common source; T

=25°C; V

amb

= 2.5 V; VDS= 2.8 V; ID= 4 mA.

G2-S

…continued

Symbol Parameter Conditions Min Typ Max Unit

Xmod cross modulation input level for k=1%;fw= 50 MHz; f

=60MHz

unw

[2]

at 0 dB AGC 89 - - dBµV
at 10 dB AGC - 85 - dBµV
at 40 dB AGC 93 98 - dBµV

[1] Calculated from measured S-parameters.
[2] Measured in Figure 32 test circuit.

8.3.1 Graphs for amplifier B

001aad912

(2)

(3)

(4)

(5)
(6)
(7)

I

D

(mA)

15

10

5

(1) (2)

001aad911

(3)

(4)

I

D

(mA)

16

12

8

4

(1)

0

(1) V
(2) V
(3) V
(4) V

0 2.01.60.8 1.20.4

= 2.5 V.

G2-S

= 2.0 V.

G2-S

= 1.5 V.

G2-S

= 1.0 V.

G2-S

V

= 2.8 V; Tj=25°C.

DS(B)

V

G1−S

(V)

Fig 17. Amplifier B: transfer characteristics; typical

values

0

04312

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V

= 1.3 V.

G1-S(B)

= 1.2 V.

G1-S(B)

= 1.1 V.

G1-S(B)

= 1.0 V.

G1-S(B)

= 0.9 V.

G1-S(B)

= 0.85 V.

G1-S(B)

= 0.8 V.

G1-S(B)

V

= 2.5 V; Tj=25°C.

G2-S

VDS (V)

Fig 18. Amplifier B: output characteristics; typical

values

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 11 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

100

I

G1

(µA)

80

60

40

20

(1) V
(2) V
(3) V
(4) V

0

0 2.52.01.0 1.50.5

= 2.5 V.

G2-S

= 2.0 V.

G2-S

= 1.5 V.

G2-S

= 1.0 V.

G2-S

V

= 2.8 V; Tj=25°C.

DS(B)

001aad913

(1)

(2)

(3)

(4)

V

(V)

G1−S

Fig 19. Amplifier B: gate1 current as a function of

gate1 voltage; typical values

40

Y



fs

(mS)

30

20

10

0

(1) V
(2) V
(3) V
(4) V

(4)

0161248

= 2.5 V.

G2-S

= 2.0 V.

G2-S

= 1.5 V.

G2-S

= 1.0 V.

G2-S

V

= 2.8 V; Tj=25°C.

DS(B)

001aad914

(1)

(2)

(3)

ID (mA)

Fig 20. Amplifier B: forward transfer admittance as a

function of drain current; typical values

16

I

D

(mA)

12

8

4

0

0302010

V

DS(B)

= 2.8 V; V

G2-S

= 2.5 V, T

001aad915

IG1 (µA)

=25°C. V

amb

Fig 21. Amplifier B: drain current as a function of gate1

current; typical values

G1(B)

001aad916

VGG (V)

= 220 kΩ;

6

I

D

(mA)

4

2

0

0321

DS(B)

= 2.8 V; V

G2-S

= 2.5 V; R

see Figure 32.

Fig 22. Amplifier B: drain voltage as a function of gate1

supply voltage (=V

); typical values

GG

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 12 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

10

I

D

(mA)

8

6

4

2

0

04312

001aad917

(1)

(2)

(3)
(4)

(5)
(6)

(7)
(8)

VGG = VDS (V)

(1) RG1= 120 kΩ.
(2) RG1= 150 kΩ.
(3) RG1= 180 kΩ.
(4) RG1= 220 kΩ.
(5) RG1= 270 kΩ.
(6) RG1= 330 kΩ.
(7) RG1= 390 kΩ.
(8) RG1= 470 kΩ.

V

G2-S

= 2.5 V; R

connected to VGG;

G1(B)

see Figure 32.

Fig 23. Amplifier B: drain current as a function of V

and VGG; typical values

6

I

D

(mA)

4

2

0

04312

(1)

(2)

(3)

(4)

(5)

V

G2−S

(1) VGG= 3.0 V.
(2) VGG= 2.5 V.
(3) VGG= 2.0 V.
(4) VGG= 1.5 V.
(1) VGG= 1.0 V.

R

= 220 kΩ; Tj=25°C; see Figure 32.

G1(B)

Fig 24. Amplifier B: drain current as a function of gate2

DS

voltage; typical values

001aad918

(V)

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 13 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

V

D(nom)

001aad919

(V)

AGC

= 4 mA;

gain

reduction

(dB)

10

20

30

40

50

0

0321

V

= 2.8 V; V

DS(A)

T

=25°C.

amb

G2(nom)

= 2.5 V; I

Fig 25. Amplifier B: typical gain reduction as a function

of the AGC voltage; typical values

5

I

D

(mA)

4

110

V

unw

(dBµV)

100

90

80

0604020

V
fw= 50 MHz; f

= 2.8 V; VG2= 2.5 V; I

DS(B)

unw

= 60 MHz; T

D(nom)

001aad920

gain reduction (dB)

= 4 mA;

=25°C.

amb

Fig 26. Amplifier B: unwanted voltage for 1 %

cross-modulation as a function of gain
reduction; typical values

001aad921

3

2

1

0

V

= VGG = 2.8 V; V

DS(B)

G2(nom)

0604020

= 2.5 V; R

= 220 kW; f = 50 MHz; T

G1(B)

gain reduction (dB)

= 25 °C.

amb

Fig 27. Amplifier B: typical drain current as a function of gain reduction; typical values

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 14 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

f (Mhz)

DS(A)

001aad922

3

=0V;

2

10

bis, g

is

(mS)

10

b

is

1

−1

10

−2

10

10 10

V

= 2.8 V; V

I

D(B)

DS(B)

= 4 mA.

G2-S

g

is

2

10

= 2.5 V; V

Fig 28. Amplifier B: input admittance and phase as a

function of frequency; typical values

Y

(µS)

1



rs

001aad924

10

3

ϕ

rs

(deg)

f (MHz )

DS(A)

001aad923

=0V;

−10

−10

−1

3

2

ϕ

fs

(deg)

2

10

Yfs

(mS)

10

1

10 10

V

= 2.8 V; V

I

D(B)

DS(B)

= 4 mA.

G2-S

Yfs

ϕ

fs

2

10

= 2.5 V; V

Fig 29. Amplifier B: forward transfer admittance and

phase as a function of frequency; typical values

001aad925

b

os

(mS)

10

, g

os

−1

10

−2

10

−3

10

X

10

V

= 2.8 V; V

I

D(B)

DS(B)

= 4 mA.

G2-S

ϕ

rs

Yrs

2

10

= 2.5 V; V

f (MHz)

DS(A)

=0V;

2

10

10

1

3

10

Fig 30. Amplifier B: reverse transfer admittance and

phase as a function of frequency: typical values

b

1

−1

10

−2

10

10 10

V

= 2.8 V; V

I

D(B)

DS(B)

= 4 mA.

G2-S

os

g

os

2

10

= 2.5 V; V

f (MHz)

DS(A)

3

=0V;

Fig 31. Amplifier B: output admittance and phase as a

function of frequency; typical values

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 15 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

8.3.2 Scattering parameters for amplifier B

Table 12: Scattering parameters for amplifier B

V

= 2.8 V; V

DS(B)

f (MHz) s

11

Magnitude
(ratio)

50 0.9939 −3.12 2.27 176.11 0.00089 94.68 0.993 −1.62
100 0.9936 −6.29 2.26 172.41 0.00170 84.37 0.993 −3.23
200 0.9896 −12.47 2.25 164.98 0.00336 81.29 0.992 −6.44
300 0.9845 −18.59 2.23 157.64 0.00503 77.17 0.990 −9.65
400 0.9779 −24.66 2.20 150.35 0.00642 73.23 0.988 −12.85
500 0.9703 −30.55 2.16 143.16 0.00769 69.72 0.986 −16.00
600 0.9620 −36.37 2.13 136.02 0.00873 66.28 0.983 −19.18
700 0.9529 −42.10 2.08 129.01 0.00967 63.19 0.980 −22.37
800 0.9439 −47.79 2.04 122.01 0.01024 60.51 0.977 −25.50
900 0.9353 −53.24 1.99 115.30 0.01058 58.52 0.975 −28.66
1000 0.9266 −58.46 1.94 108.64 0.01074 57.24 0.973 −31.85

G2-S

= 2.5 V; I

D(B)

Angle
(deg)

= 4 mA; V

s

21

Magnitude
(ratio)

DS(A)

=0V;V

G1-S(A)

Angle
(deg)

=0V; T

s

12

Magnitude
(ratio)

= 25°C; typical values.

amb

Angle
(deg)

s

22

Magnitude
(ratio)

Angle
(deg)

8.3.3 Noise data for amplifier B

Table 13: Noise data for amplifier B

V

= 2.8 V; V

DS(B)

f (MHz) NF

G2-S

= 2.5 V; I

min

= 4 mA.

D(B)

(dB) Γ

opt

rn (ratio)

ratio (deg)

400 0.9 0.8 19 0.9
800 1.0 0.83 46 0.96

9. Test information

V

AGC

R1
10 kΩ

C1

C3

4.7 nF

L1
≈ 2.2 µH

C4

4.7 nF

R

L

50 Ω

R

GEN

50 Ω

R2
50 Ω

C2

4.7 nF
R

4.7 nF

DUT

G1

V

V

I

GG

V

DS

001aad926

Fig 32. Cross-modulation test setup (for one MOSFET)

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 16 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

10. Package outline

Plastic surface mounted package; 6 leads SOT666

D

S

YS

A

E

H

E

X

456

pin 1 index

123

e

b

1

p

e

w M

A

A

c

L

p

detail X

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT b

mm

OUTLINE

VERSION

SOT666

A

0.6

0.5

0.27

0.17

cD

p

0.18

1.7

0.08

1.5

IEC JEDEC JEITA

1.3

1.1

e

E

1.0

REFERENCES

0.5

e

H

L

w

1

1.7

1.5

p

E

0.3

0.1y0.1

0.1

EUROPEAN

PROJECTION

ISSUE DATE

01-08-27
04-11-08

Fig 33. Package outline SOT666

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 17 of 20

Philips Semiconductors

Dual N-channel dual gate MOSFET

BF1206F

11. Revision history

Table 14: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

BF1206F_1 20060130 product data sheet - BF1206F_1 -

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 18 of 20

Philips Semiconductors

12. Data sheet status

BF1206F

Dual N-channel dual gate MOSFET

Level Data sheet status

I Objective data Development This data sheet contains data from the objective specification for product development. Philips

II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published

III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

13. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

[2] [3]

Definition

Semiconductors reserves the right to change the specification in any manner without notice.

at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makesnorepresentations or warrantiesthat theseproducts are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.

15. Trademarks

14. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors

Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.

16. Contact information

For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 01 — 30 January 2006 19 of 20

Philips Semiconductors

17. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4

8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4

8.1 Dynamic characteristics for amplifier A. . . . . . . 4

8.1.1 Graphs for amplifier A. . . . . . . . . . . . . . . . . . . . 5

8.1.2 Scattering parameters for amplifier A. . . . . . . 10

8.2 Noise data for amplifier A . . . . . . . . . . . . . . . . 10

8.3 Dynamic characteristics for amplifier B. . . . . . 10

8.3.1 Graphs for amplifier B. . . . . . . . . . . . . . . . . . . 11

8.3.2 Scattering parameters for amplifier B. . . . . . . 16

8.3.3 Noise data for amplifier B . . . . . . . . . . . . . . . . 16

9 Test information. . . . . . . . . . . . . . . . . . . . . . . . 16

10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18

12 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 19

13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

14 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

16 Contact information . . . . . . . . . . . . . . . . . . . . 19

BF1206F

Dual N-channel dual gate MOSFET

© Koninklijke Philips Electronics N.V. 2006

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 30 January 2006

BF1206F_1