Philips bf1205c Datasheet

BF1205C

Dual N-channel dual gate MOS-FET

Rev. 02 — 15 August 2006 Product data sheet

1. Product profile

1.1 General description

The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source
and gate 2 leads and an integrated switch. The integrated switchisoperated by the gate 1
bias of amplifier b.

The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features

n Twolow noise gain controlled amplifiers in a single package; one with afullyintegrated

bias and one with a partly integrated bias

n Internal switch to save external components
n Superior cross-modulation performance during AGC
n High forward transfer admittance
n High forward transfer admittance to input capacitance ratio.

1.3 Applications

n Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply

voltage

u digital and analog television tuners
u professional communication equipment.

Philips Semiconductors

1.4 Quick reference data

Table 1. Quick reference data

Per MOS-FET unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

DS

I

D

P

tot

 forward transfer admittance f = 1 MHz

y

fs

C

ig1-ss

C

rss

NF noise figure amplifier a; f = 400 MHz - 1.3 1.9 dB

X

mod

T

j

[1] Tsp is the temperature at the soldering point of the source lead.

BF1205C

Dual N-channel dual gate MOS-FET

drain-source voltage - - 6 V
drain current (DC) - - 30 mA
total power dissipation Tsp≤ 107 °C

amplifier a; I
amplifier b; I

=19mA 26 31 41 mS

D

=13mA 28 33 43 mS

D

input capacitance at gate 1 f = 1 MHz

amplifier a - 2.2 2.7 pF
amplifier b - 2.0 2.5 pF

reverse transfer capacitance f = 1 MHz - 20 - fF

amplifier b; f = 800 MHz - 1.4 2.1 dB

cross-modulation input level for k = 1 % at

40 dB AGC

amplifier a 100 105 - dBµV
amplifier b 100 103 - dBµV

junction temperature - - 150 °C

[1]

- - 180 mW

2. Pinning information

Table 2. Discrete pinning

Pin Description Simplified outline Symbol

1 gate 1 (a)
2 gate 2
3 gate 1 (b)
4 drain (b)
5 source
6 drain (a)

6 5 4

1 2 3

001aaa706

(a)

(b)

AMP a

g1

g2

g1

AMP b

sym033

d

(a)

s

d

(b)

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 02 — 15 August 2006 2 of 22

Philips Semiconductors

3. Ordering information

Table 3. Ordering information

Type number Package

BF1205C - plastic surface mounted package; 6 leads SOT363

4. Marking

Table 4. Marking

Type number Marking code

BF1205C M6*

[1] * = p or -: made in Hong Kong.

* = t: made in Malaysia.
* = W: made in China.

5. Limiting values

BF1205C

Dual N-channel dual gate MOS-FET

Name Description Version

[1]

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per MOS-FET

V

DS

I

D

I

G1

I

G2

P

tot

T

stg

T

j

[1] Tsp is the temperature at the soldering point of the source lead.

drain-source voltage - 6 V
drain current (DC) - 30 mA
gate 1 current - ±10 mA
gate 2 current - ±10 mA
total power dissipation Tsp≤ 107 °C
storage temperature −65 +150 °C
junction temperature - 150 °C

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-s)

thermal resistance from junction
to soldering point

[1]

- 180 mW

240 K/W

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Product data sheet Rev. 02 — 15 August 2006 3 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

250

P

tot

(mW)

200

150

100

50

0

0 20015050 100

001aac193

Tsp (˚C)

Fig 1. Power derating curve.

7. Static characteristics

Table 7. Static characteristics

Tj=25°C.

Symbol Parameter Conditions Min Typ Max Unit

Per MOS-FET; unless otherwise specified

V

(BR)DSS

V

(BR)G1-SS

V

(BR)G2-SS

V

(F)S-G1

V

(F)S-G2

V

G1-S(th)

V

G2-S(th)

I

DSX

I

G1-S

I

G2-S

drain-source breakdown voltage V

G1-S=VG2-S

amplifier a 6 - - V

amplifier b 6 - - V
gate 1-source breakdown voltage VGS=VDS=0V; I
gate 2-source breakdown voltage VGS=VDS=0V; I
forward source-gate 1 voltage V
forward source-gate 2 voltage V

G2-S=VDS
G1-S=VDS

gate 1-source threshold voltage VDS=5V; V
gate 2-source threshold voltage VDS=5V; V
drain-source current V

G2-S

=4V; V
amplifier a; V
amplifier b

gate 1 cut-off current V

G2-S=VDS(a)

amplifier a; V
amplifier b; V

gate 2 cut-off current V

=4V;

G2-S

V

G1-S(a)=VDS(a)=VDS(b)

V

G1-S(b)

=0V; ID=10µA

=0V; I
=0V; I

G2-S
G1-S

DS(b)

DS(a)

=0V

G1-S(a)
G1-S(b)

=0V;

=10mA 6 - 10 V

G1-S

=10mA 6 - 10 V

G2-S

= 10 mA 0.5 - 1.5 V

S-G1

= 10 mA 0.5 - 1.5 V

S-G2

=4V; ID= 100 µA 0.3 - 1.0 V
=5V; ID= 100 µA 0.4 - 1.0 V

=5V; RG1= 150 kΩ

=5V

=5V; I
=5V; V

= 0 A - - 50 nA

D(b)

= 0 V - - 50 nA

DS(b)

[1]

14 - 24 mA

[2]

9 - 17 mA

- - 20 nA

=0V;

[1] RG1 connects gate 1 (b) to VGG = 0 V (see Figure 3).
[2] RG1 connects gate 1 (b) to VGG= 5 V (see Figure 3).

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 02 — 15 August 2006 4 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

001aaa552

(1)

(2)

(3)

VGG (V)

I

D

(mA)

(1) I
(2) I
(3) I
(4) I
(5) I
(6) I

20

16

12

8

4

0

054231

; RG1= 120 kΩ.

D(b)

; RG1= 150 kΩ.

D(b)

; RG1= 180 kΩ.

D(b)

; RG1= 180 kΩ.

D(a)

; RG1= 150 kΩ.

D(a)

; RG1= 120 kΩ.

D(a)

(4)

(6)

(5)

Fig 2. Drain currents of MOS-FET a and b as function

of V

.

GG

g1 (a)

g2

g1 (b)

R

G1

V

VGG = 5 V: amplifier a is off; amplifier b is on
VGG = 0 V: amplifier a is on; amplifier b is off.

Fig 3. Functional diagram.

GG

d (a)

s

d (b)

001aaa553

8. Dynamic characteristics

8.1 Dynamic characteristics for amplifier a

S(opt)

[1]

; BL=B

L(opt)

= 2 mS; GL= 1 mS 26 30 34 dB

S

= 3.3 mS; GL=1mS 21 25 29 dB

S

= 20 mS; BS= 0 S - 3.0 - dB

S

S=YS(opt)
S=YS(opt)

- 1.3 1.9 dB

- 1.4 2.1 dB

Table 8. Dynamic characteristics for amplifier a

Common source; T

=25°C; V

amb

=4V; VDS=5V; ID= 19 mA.

G2-S

Symbol Parameter Conditions Min Typ Max Unit

 forward transfer admittance Tj=25°C263141mS

y

fs

C
C
C
C
G

ig1-ss
ig2-ss
oss
rss

tr

input capacitance at gate 1 f = 1 MHz - 2.2 2.7 pF
input capacitance at gate 2 f = 1 MHz - 3.0 - pF
output capacitance f = 1 MHz - 0.9 - pF
reverse transfer capacitance f = 1 MHz - 20 - fF
power gain BS=B

f = 200 MHz; GS= 2 mS; GL= 0.5 mS 31 35 39 dB
f = 400 MHz; G
f = 800 MHz; G

NF noise figure f = 11 MHz; G

f = 400 MHz; Y
f = 800 MHz; Y

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 02 — 15 August 2006 5 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

[1]

Table 8. Dynamic characteristics for amplifier a

Common source; T

=25°C; V

amb

=4V; VDS=5V; ID= 19 mA.

G2-S

Symbol Parameter Conditions Min Typ Max Unit

X

mod

cross-modulation input level for k = 1 %; fw= 50 MHz; f

at 0 dB AGC 90 - - dBµV
at 10 dB AGC - 90 - dBµV
at 20 dB AGC - 99 - dBµV
at 40 dB AGC 100 105 - dBµV

…continued

=60MHz

unw

[2]

[1] For the MOS-FET not in use: V

G1-S(b)

= 0 V; V

DS(b)

=0V.

[2] Measured in Figure 33 test circuit.

8.1.1 Graphs for amplifier a

(2)
(3)

001aaa554

(1)

(4)

(5)

(6)

(7)

V

(V)

G1-S

32

I

D

(mA)

24

16

8

0

0642

(1) V

G1-S(a)

(2) V

G1-S(a)

(3) V

G1-S(a)

(4) V

G1-S(a)

(5) V

G1-S(a)

(6) V

G1-S(a)

(7) V

G1-S(a)

(8) V

G1-S(a)

(9) V

G1-S(a)

V

G2-S

= 1.8 V.
= 1.7 V.
= 1.6 V.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
= 1.1 V.
=1V.

=4V; V

G1-S(b)=VDS(b)

=0V; Tj=25°C.

30

I

D

(mA)

20

10

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V

0

021.60.8 1.20.4

=4V.

G2-S

= 3.5 V.

G2-S

=3V.

G2-S

= 2.5 V.

G2-S

=2V.

G2-S

= 1.5 V.

G2-S

=1V.

G2-S

V

DS(a)

=5V; V

G1-S(b)=VDS(b)

=0V; Tj=25°C.

Fig 4. Transfer characteristics; typical values. Fig 5. Output characteristics; typical values.

001aaa555

VDS (V)

(1)

(2)

(3)

(4)

(5)
(6)
(7)

(8)
(9)

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Product data sheet Rev. 02 — 15 August 2006 6 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

40

y

fs

(mS)

30

20

10

(6)

0

03224816

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V

V

G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(a)

=4V.
= 3.5 V.
=3V.
= 2.5 V.
=2V.
= 1.5 V.

=5V; V

G1-S(b)=VDS(b)

(5)

=0V; Tj=25°C.

001aaa556

(1)

(2)

(3)

(4)

ID (mA)

Fig 6. Forward transfer admittance as a function of

drain current; typical values.

20

(a)

I

D

(mA)

16

12

8

4

0

0604020

V

DS(a)

V

G1-S(b)

=5V; V

G2-S

=4V; V

=0V; Tj=25°C.

DS(b)

001aaa557

ID (b) (µA)

=5V;

Fig 7. Drain current as a function of internal G1

current (current in pin drain (b) if MOS-FET (b)
is switched off); typical values.

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 02 — 15 August 2006 7 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

20

I

D

(mA)

16

12

8

4

0

054231

V

DS(a)=VDS(b)=Vsupply

R

= 150 kΩ (connected to ground); see

G1(b)

, V

G2-S

001aaa558

V

(V)

supply

=4V, Tj=25°C,

Figure 3.

Fig 8. Drain current of amplifier a as a function of

supply voltage of a and b amplifier; typical
values.

32

I

D

(mA)

24

16

8

0

0642

(1) V

DS(b)

(2) V

DS(b)

(3) V

DS(b)

(4) V

DS(b)

(5) V

DS(b)

(6) V

DS(b)

V

DS(a)

=5V.
= 4.5 V.
=4V.
= 3.5 V.
=3V.
= 2.5 V.
=5V; V

= 0 V; gate 1 (a) = open;

G1-S(b)

001aaa559

V

G2-S

(1)
(2)

(3)
(4)
(5)

(6)

(V)

Tj=25°C.

Fig 9. Drain current as a function of gate 2 and drain

supply voltage; typical values.

120

V

unw

(dBµV)

110

100

90

80

0504020 3010

V

DS(a)=VDS(b)

f

= 60 MHz; T

unw

=5V; V

=25°C; see Figure 33.

amb

gain reduction (dB)

=0V; fw= 50 MHz;

G1-S(b)

Fig 10. Unwanted voltage for 1 % cross-modulation as

a function of gain reduction; typical values.

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

001aaa560

0

gain

reduction

(dB)

10

20

30

40

50

04312

V

DS(a)=VDS(b)

=5V;V

= 0 V; f = 50 MHz; see

G1-S(b)

Figure 33.

Fig 11. Gain reduction as a function of AGC voltage;

typical values.

001aaa561

V

(V)

AGC

Product data sheet Rev. 02 — 15 August 2006 8 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

32

I

D

(mA)

24

16

8

0

0604020

V

DS(a)=VDS(b)

T

amb

=5V; V

G1-S(b)

=25°C; see Figure 33.

= 0 V; f = 50 MHz;

001aaa562

gain reduction (dB)

Fig 12. Drain current as a function of gain reduction;

typical values.

2

10

001aaa565

2

10

2

10

bis, g

is

(mS)

10

b

is

1

g

−1

10

−2

10

10 10

V

=5V; V

I

D(a)

DS(a)

=19mA.

G2-S(a)

is

2

10

=4V; V

DS(b)=VG1-S(b)

001aaa564

3

f (MHz)

=0V;

Fig 13. Input admittance as a function of frequency;

typical values.

3

10

001aaa566

3

10

y

fs

(mS)

10

1

10 10

V

=5V; V

I

D(a)

DS(a)

=19mA.

G2-S(a)

y

fs

−ϕ

2

10

=4V; V

fs

f (MHz)

DS(b)=VG1-S(b)

−ϕ

(deg)

10

1

3

=0V;

Fig 14. Forward transfer admittance and phase as a

function of frequency; typical values.

y

rs

fs

(mS)

−ϕ

y

rs

2

10

=4V; V

rs

f (MHz)

DS(b)=VG1-S(b)

2

10

10

1

10 10

V

=5V; V

I

D(a)

DS(a)

=19mA.

G2-S(a)

10

10

1

3

=0V;

−ϕ

(deg)

2

rs

Fig 15. Reverse transfer admittance and phase as a

function of frequency: typical values.

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 02 — 15 August 2006 9 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

10

bos, g

os

V

DS(a)

=5V; V

G2-S(a)

=4V; V

(mS)

1

−1

10

−2

10

10 10

DS(b)=VG1-S(b)

=0V; I

D(a)

10

=19mA.

b

os

g

os

2

f (MHz)

Fig 16. Output admittance as a function of frequency; typical values.

8.1.2 Scattering parameters for amplifier a

Table 9. Scattering parameters for amplifier a

V

=5V; V

DS(a)

f
(MHz)

S

11

Magnitude
ratio

50 0.992 −3.91 3.07 175.56 0.0007 83.61 0.992 −1.47
100 0.990 −7.76 3.06 171.18 0.0017 83.19 0.992 −2.93
200 0.982 −15.42 3.04 162.42 0.0026 78.19 0.990 −5.84
300 0.971 −22.99 3.01 153.79 0.0037 73.75 0.988 −8.71
400 0.956 −30.52 2.96 145.22 0.0047 69.82 0.985 −11.59
500 0.938 −37.83 2.90 136.78 0.0055 66.12 0.982 −14.48
600 0.917 −45.14 2.83 128.46 0.0061 62.11 0.979 −17.31
700 0.893 −52.31 2.76 120.20 0.0065 58.86 0.975 −20.14
800 0.867 −59.47 2.69 111.98 0.0068 58.28 0.972 −22.98
900 0.838 −66.23 2.60 103.90 0.0067 50.64 0.968 −25.85
1000 0.807 −73.10 2.52 95.875 0.0065 47.28 0.966 −28.74

G2-S

=4V; I

Angle
(deg)

= 19 mA; V

D(a)

S

21

Magnitude
ratio

DS(b)

=0V; V

Angle
(deg)

001aaa567

G-1S(b)

S
Magnitude

ratio

12

3

=0V; T

amb

Angle
(deg)

=25°C.

S

22

Magnitude
ratio

Angle
(deg)

8.1.3 Noise data for amplifier a

Table 10. Noise data for amplifier a

V

=5V; V

DS(a)

f
(MHz)

400 1.3 0.718 16.06 0.683
800 1.4 0.677 37.59 0.681

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 02 — 15 August 2006 10 of 22

G2-S

=4V; I

F

min

(dB)

= 19 mA; V

D(a)

Γ

DS(b)

opt

=0V; V

G-1S(b)

=0V; T

ratio (deg)

amb

=25°C.

r

n

(Ω)

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

8.2 Dynamic characteristics for amplifier b

Table 11. Dynamic characteristics for amplifier b

Common source; T

Symbol Parameter Conditions Min Typ Max Unit

 forward transfer admittance Tj=25°C 2833 43mS

y

fs

C
C
C
C
G

ig1-ss
ig2-ss
oss
rss

tr

input capacitance at gate 1 f = 1 MHz - 2.0 2.5 pF
input capacitance at gate 2 f = 1 MHz - 3.4 - pF
output capacitance f = 1 MHz - 0.85 - pF
reverse transfer capacitance f = 1 MHz - 20 - fF
power gain BS=B

NF noise figure f = 11 MHz; G

X

mod

cross-modulation input level for k=1%;fw= 50 MHz; f

=25°C; V

amb

=4V; VDS=5V; ID= 13 mA.

G2-S

; BL=B

S(opt)

f = 200 MHz; GS= 2 mS; GL= 0.5 mS 31 35 39 dB
f = 400 MHz; G
f = 800 MHz; G

S

f = 400 MHz; Y
f = 800 MHz; Y

at 0 dB AGC 90 - - dBµV
at 10 dB AGC - 88 - dBµV

at 20 dB AGC - 94 - dBµV
at 40 dB AGC 100 103 - dBµV

L(opt)

= 2 mS; GL= 1 mS 28 32 36 dB

S

= 3.3 mS; GL=1mS 2428 32dB

S

[1]

= 20 mS; BS=0S - 5 - dB

S=YS(opt)
S=YS(opt)

= 60 MHz

unw

- 1.3 1.9 dB

- 1.4 2.1 dB

[2]

[1] For the MOS-FET not in use: V
[2] Measured in Figure 34 test circuit.

G1-S(a)

= 0 V; V

DS(a)

=0 V.

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 02 — 15 August 2006 11 of 22

Philips Semiconductors

8.2.1 Graphs for amplifier b

BF1205C

Dual N-channel dual gate MOS-FET

30

I

D

(mA)

20

10

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V

0

021.60.8 1.20.4

=4V.

G2-S

= 3.5 V.

G2-S

=3V.

G2-S

= 2.5 V.

G2-S

=2V.

G2-S

= 1.5 V.

G2-S

=1V.

G2-S

V

DS(b)

=5V; V

DS(a)=VG1-S(a)

001aaa568

(1)

(4)

(2)
(3)

(5)

(6)

(7)

V

(V)

G1-S

=0V; Tj=25°C.

32

I

D

(mA)

24

16

8

0

0642

(1) V

G1-S(b)

(2) V

G1-S(b)

(3) V

G1-S(b)

(4) V

G1-S(b)

(5) V

G1-S(b)

(6) V

G1-S(b)

(7) V

G1-S(b)

V

G2-S

= 1.6 V.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
= 1.1 V.
=1V.

=4V; V

DS(a)=VG1-S(a)

=0V; Tj=25°C.

001aaa569

(1)

(2)

(3)

(4)

(5)

(6)
(7)

VDS (V)

Fig 17. Transfer characteristics; typical values. Fig 18. Output characteristics; typical values.

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 02 — 15 August 2006 12 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

100

I

G1

(µA)

80

60

40

20

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V

0

021.60.8 1.20.4

=4V.

G2-S

= 3.5 V.

G2-S

=3V.

G2-S

= 2.5 V.

G2-S

=2V.

G2-S

= 1.5 V.

G2-S

=1V.

G2-S

V

DS(b)

=5V; V

DS(a)=VG1-S(a)

=0V; Tj=25°C.

001aaa570

(1) (2)

(3)

(4)

(5)

(6)

(7)

V

(V)

G1-S

Fig 19. Gate 1 current as a function of gate 1 voltage;

typical values.

40

y

fs

(mS)

30

20

10

(7)

0

03224816

(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V

V

G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(b)

=4V.
= 3.5 V.
=3V.
= 2.5 V.
=2V.
= 1.5 V.
=1V.

=5V; V

(6)

DS(a)=VG1-S(a)

(5)

=0V; Tj=25°C.

001aaa571

(1)
(2)

(3)

(4)

ID (mA)

Fig 20. Forward transfer admittance as a function of

drain current; typical values.

I

D

(mA)

24

16

8

0

0504020 3010

V

DS(b)

Tj=25°C.

=5V; V

G2-S

=4V; V

001aaa572

IG1 (µA)

DS(a)=VG1-S(a)

=0V;

16

I

D

(mA)

12

8

4

0

V
Tj=25°C; R

054231

=5V; V

DS(b)

=4V; V

G2-S

= 150 kΩ (connected to VGG); see

G1(b)

DS(a)=VG1-S(a)

001aaa573

VGG (V)

=0V;

Figure 3.

Fig 21. Drain current as a function of gate 1 current;

typical values.

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Fig 22. Drain current as a function of gate 1 supply

voltage (V

); typical values.

GG

Product data sheet Rev. 02 — 15 August 2006 13 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

V

GG

001aaa574

(1)

(2)
(3)

(4)
(5)

(6)
(7)
(8)

VDS (V)

=

24

I

D

(mA)

16

8

0

0642

(1) R

G1(b)

(2) R

G1(b)

(3) R

G1(b)

(4) R

G1(b)

(5) R

G1(b)

(6) R

G1(b)

(7) R

G1(b)

(8) R

G1(b)

V

G2-S

R

G1(b)

=68kΩ.
=82kΩ.
= 100 kΩ.
= 120 kΩ.
= 150 kΩ.
= 180 kΩ.
= 220 kΩ.
= 270 kΩ.

=4V; V

DS(a)=VG1-S(a)

=0V; Tj=25°C;

is connected to VGG; see Figure 3.

Fig 23. Drain current as a function of gate 1 (VGG),

drain supply voltage and value of RG1; typical
values.

16

I

D

(mA)

12

8

4

0

0642

001aaa575

V

G2-S

(1)
(2)
(3)

(4)
(5)

(V)

(1) VGG= 5.0 V.
(2) VGG= 4.5 V.
(3) VGG= 4.0 V.
(4) VGG= 3.5 V.
(5) VGG= 3.0 V.

V

=5V; V

R

DS(b)
G1(b)

DS(a)=VG1-S(a)

= 150 kΩ (connected to VGG); see Figure 3.

=0V; Tj=25°C;

Fig 24. Drain current as a function of gate 2 voltage;

typical values.

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 02 — 15 August 2006 14 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

V

G2-S

001aaa576

(1)

(2)

(3)

(4)

(5)

(V)

30

I

G1

(µA)

20

10

0

0642

(1) VGG= 5.0 V.
(2) VGG= 4.5 V.
(3) VGG= 4.0 V.
(4) VGG= 3.5 V.
(5) VGG= 3.0 V.

V

=5V; V

R

DS(b)
G1(b)

DS(a)=VG1-S(a)

= 150 kΩ (connected to VGG); see Figure 3.

=0V; Tj=25°C;

Fig 25. Gate 1 current as a function of gate 2 voltage;

typical values.

120

V

unw

(dBµV)

110

100

90

80

V
R
f

unw

0604020

=5V; VGG=5V; V

DS(b)

= 150 kΩ (connected to VGG); fw= 50 MHz;

G1(b)

= 60 MHz; T

amb

DS(a)=VG1-S(a)

=25°C; see Figure 34.

001aaa577

gain reduction (dB)

=0V;

Fig 26. Unwanted voltage for 1 % cross-modulation as

a function of gain reduction; typical values.

001aaa578

V

(V)

AGC

=0V;

gain

reduction

(dB)

0

10

20

30

40

50

04312

V

=5V; VGG=5V; V

DS(b)

R

= 150 kΩ (connected to VGG); f = 50 MHz;

G1(b)

T

=25°C; see Figure 34.

amb

DS(a)=VG1-S(a)

Fig 27. Typical gain reduction as a function of AGC

voltage.

16

I

D

(mA)

12

8

4

0

0604020

V

DS(b)

R

G1(b)

T

amb

=5V; VGG=5V; V

DS(a)=VG1-S(a)

= 150 kΩ (connected to VGG); f = 50 MHz;

=25°C; see Figure 34.

001aaa579

gain reduction (dB)

=0V;

Fig 28. Drain current as a function of gain reduction;

typical values.

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 02 — 15 August 2006 15 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

2

10

bis, g

is

(mS)

10

b

is

1

g

is

−1

10

−2

10

10 10

V

=5V; V

I

D(b)

DS(b)

= 13 mA.

G2-S

2

10

=4V; V

DS(a)=VG1-S(a)

001aaa581

3

f (MHz)

=0V;

Fig 29. Input admittance as a function of frequency;

typical values.

3

10

001aaa583

3

10

f (MHz)

001aaa582

=0V;

10

−ϕ

(deg)

10

1

3

2

2

10

y

2

10

=4V; V

fs

−ϕ

fs

DS(a)=VG1-S(a)

y

fs

(mS)

10

1

10 10

V

=5V; V

I

DS(b)

D(b)

=13mA.

G2-S

Fig 30. Forward transfer admittance and phase as a

function of frequency; typical values.

10

001aaa584

fs

y

rs

(µS)

2

10

10

1

10 10

V

=5V; V

I

D(b)

DS(b)

=13mA.

G2-S

−ϕ

2

10

=4V; V

rs

y

rs

f (MHz)

DS(a)=VG1-S(a)

=0V;

10

10

1

3

−ϕ

(deg)

2

Fig 31. Reverse transfer admittance and phase as a

function of frequency; typical values.

rs

bos, g

os

(mS)

b

2

10

=4V; V

os

g

os

DS(a)=VG1-S(a)

1

−1

10

−2

10

10 10

V

=5V; V

I

DS(b)

D(b)

=13mA.

G2-S

f (MHz)

3

=0V;

Fig 32. Output admittance as a function of frequency;

typical values.

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 02 — 15 August 2006 16 of 22

Philips Semiconductors

8.2.2 Scattering parameters for amplifier b

Table 12. Scattering parameters for amplifier b

V

=5V; V

DS(b)

f
(MHz)

50 0.986 −3.66 3.26 175.93 0.0008 84.23 0.988 −1.65
100 0.982 −7.01 3.24 172.04 0.0015 84.91 0.988 −3.27
200 0.975 −13.71 3.22 164.24 0.0029 83.96 0.986 −6.50
300 0.966 −20.36 3.19 156.53 0.0042 82.86 0.984 −9.69
400 0.955 −27.04 3.15 148.86 0.0055 81.88 0.982 −12.88
500 0.943 −33.62 3.10 141.24 0.0066 80.92 0.978 −16.07
600 0.927 −40.16 3.05 133.70 0.0076 80.15 0.975 −19.21
700 0.909 −46.70 2.99 126.13 0.0086 79.68 0.972 −22.35
800 0.891 −52.07 2.92 118.64 0.0094 78.28 0.968 −25.52
900 0.868 −59.48 2.84 111.09 0.0100 78.28 0.965 −28.65
1000 0.846 −65.86 2.77 103.58 0.0107 78.15 0.961 −31.85

G2-S

S

11

Magnitude
ratio

=4V; I

Angle
(deg)

= 13 mA; V

D(b)

S
Magnitude

ratio

BF1205C

Dual N-channel dual gate MOS-FET

=0V; V

DS(a)

21

Angle
(deg)

=0V; T

G1-S(a)

S

12

Magnitude
ratio

=25°C.

amb

Angle
(deg)

S

22

Magnitude
ratio

Angle
(deg)

8.2.3 Noise data for amplifier b

Table 13. Noise data for amplifier b

V

=5V; V

DS(b)

f
(MHz)

400 1.3 0.695 13.11 0.694
800 1.4 0.674 32.77 0.674

G2-S

=4V; I

F

min

(dB)

= 13 mA; V

D(b)

Γ

DS(a)

opt

=0V; V

G1-S(a)

=0V; T

ratio (deg)

amb

=25°C.

r

n

(Ω)

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 02 — 15 August 2006 17 of 22

Philips Semiconductors

9. Test information

V

AGC

BF1205C

Dual N-channel dual gate MOS-FET

V

(a)

DS

5V

4.7 nF

4.7 nF

R

GEN
50 Ω

V

i

50 Ω

4.7 nF

4.7 nF

50 Ω

V

Fig 33. Cross-modulation test set-up for amplifier a.

V

AGC

10 kΩ

50 Ω

4.7 nF

4.7 nF

4.7 nF

g1 (a)

g1 (b) d (b)

10 kΩ

g1 (a)

g2

BF1205C

g1 (b) d (b)

R

G1

GG

0V

g2

BF1205C

d (a)

S

L1

2.2 µH

4.7 nF

d (a)

R

S

L2

2.2 µH

4.7 nF

V

(b)

DS

5V

V

(a)

DS

5V

4.7 nF

L1

2.2 µH

4.7 nF

L

50 Ω

001aaa563

R

GEN
50 Ω

50 Ω

V

i

R

G1

V

GG

5V

L2

2.2 µH

4.7 nF

V

(b)

DS

5V

001aaa580

R

L

50 Ω

Fig 34. Cross-modulation test set-up for amplifier b.

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 02 — 15 August 2006 18 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

10. Package outline

Plastic surface-mounted package; 6 leads SOT363

D

y

pin 1
index

132

e

1

e

E

H

E

AB

X

v M

A

456

Q

A

A

1

b

p

wBM

L

detail X

c

p

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

1.1

mm

0.8

OUTLINE

VERSION

SOT363 SC-88

max

0.1

b

cD

p

0.30

0.20

IEC JEDEC JEITA

0.25

0.10

2.2

1.8

E

1.35

1.3

1.15

REFERENCES

e

e

0.65

H

L

Qywv

p

E

1

2.2

0.45

2.0

0.15

0.25

0.15

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

04-11-08
06-03-16

Fig 35. Package outline.

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 02 — 15 August 2006 19 of 22

Philips Semiconductors

Dual N-channel dual gate MOS-FET

BF1205C

11. Revision history

Table 14. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BF1205C_2 20060815 Product data sheet - BF1205C_1

(9397 750 13005)
Modifications:
BF1205C_1

(9397 750 13005)

• Figure 1: replaced drawing with correct drawing 001aac193

20040518 Product data sheet - -

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 02 — 15 August 2006 20 of 22

Philips Semiconductors

12. Legal information

12.1 Data sheet status

BF1205C

Dual N-channel dual gate MOS-FET

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differin case of multipledevices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included hereinand shall have no liability forthe consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the sameproduct type number(s) and title. A short data sheet is intended
for quickreferenceonly and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.

Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.semiconductors.philips.com.

Definition

malfunction of a Philips Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device.Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.semiconductors.philips.com/profile/terms, including those

pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

12.4 Trademarks

Notice: Allreferencedbrands, product names,service names andtrademarks
are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]

BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 02 — 15 August 2006 21 of 22

Philips Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4

8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5

8.1 Dynamic characteristics for amplifier a. . . . . . . 5

8.1.1 Graphs for amplifier a. . . . . . . . . . . . . . . . . . . . 6

8.1.2 Scattering parameters for amplifier a . . . . . . . 10

8.1.3 Noise data for amplifier a . . . . . . . . . . . . . . . . 10

8.2 Dynamic characteristics for amplifier b. . . . . . 11

8.2.1 Graphs for amplifier b. . . . . . . . . . . . . . . . . . . 12

8.2.2 Scattering parameters for amplifier b . . . . . . . 17

8.2.3 Noise data for amplifier b . . . . . . . . . . . . . . . . 17

9 Test information. . . . . . . . . . . . . . . . . . . . . . . . 18

10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 19

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 20

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 21

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 21

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 21

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21

13 Contact information. . . . . . . . . . . . . . . . . . . . . 21

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

BF1205C

Dual N-channel dual gate MOS-FET

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

For more information, please visit: http://www.semiconductors.philips.com.
For sales office addresses, email to: [email protected].

Date of release: 15 August 2006

Document identifier: BF1205C_2