Philips BF1109WR, BF1109R, BF1109 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BF1109; BF1109R; BF1109WR

N-channel dual-gate MOS-FETs

Product specification
Supersedes data of 1997 Sep 03
File under Discrete Semiconductors, SC07

1997 Dec 08

Philips Semiconductors Product specification

N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR

FEATURES

• Short channel transistor with high
forward transfer admittance to input
capacitance ratio

• Low noise gain controlled amplifier
up to 1 GHz

• Internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.

APPLICATIONS

• VHF and UHF applications with 9 V
supply voltage, such as television
tuners and professional
communications equipment.

DESCRIPTION

Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1109,
BF1109R and BF1109WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.

PINNING

PIN DESCRIPTION

1 source
2 drain
3 gate 2
4 gate 1

12

Top view

BF1109 marking code: NFp.

Fig.1 Simplified outline

(SOT143B).

34

MSB014

handbook, 2 columns

Top view

BF1109R marking code: NBp.

Fig.2 Simplified outline

(SOT143R).

page

21

Top view

BF1109WR marking code: NB.

Fig.3 Simplified outline

(SOT343R).

43

12

MSB035

43

MSB842

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

DS

I

D

P

tot

 forward transfer admittance − 30 − mS

y

fs

C

ig1-ss

C

rss

drain-source voltage −−11 V
drain current (DC) −−30 mA
total power dissipation T

≤ 80 °C −−200 mW

amb

input capacitance at gate 1 − 2.2 2.7 pF

reverse transfer capacitance f = 1 MHz − 25 40 fF
F noise figure f = 800 MHz − 1.5 2.5 dB
X

mod

T

j

cross-modulation input level for k = 1% at 40 dB AGC 100 −−dBµV

operating junction temperature −−150 °C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

1997 Dec 08 2

Philips Semiconductors Product specification

N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

I

D

I

G1

I

G2

P

tot

T

stg

T

j

Note

1. Device mounted on a printed-circuit board.

drain-source voltage − 11 V

drain current (DC) − 30 mA

gate 1 current −±10 mA

gate 2 current −±10 mA

total power dissipation T

≤ 80 °C; note 1 − 200 mW

amb

storage temperature −65 +150 °C

operating junction temperature − +150 °C

250

handbook, halfpage

P

tot

(mW)

200

150

100

50

0

0 40 80 160

120

T

amb

Fig.4 Power derating curve.

MGM243

(°C)

1997 Dec 08 3

Philips Semiconductors Product specification

N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

R

th j-s

Note

1. Device mounted on a printed-circuit board.

STATIC CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

(BR)DSS

V

(BR)G1-SS

V

(BR)G2-SS

V

G2-S (th)

I

DSX

I

G1-SS

I

G2-SS

thermal resistance from junction to ambient in free air note 1 350 K/W

thermal resistance from junction to soldering point 200 K/W

drain-source breakdown voltage V

gate 1-source breakdown voltage V

gate 2-source breakdown voltage V

gate 2-source threshold voltage V

self-biasing drain current V

gate 1 cut-off current V

gate 2 cut-off current V

G1-S=VG2-S

= 0; I

G2-S
G1-S=VDS

=9V; VDS=9V; ID=20µA 0.3 1.2 V

G1-S

=4V; VDS= 9 V 8 16 mA

G2-S

=9V; V

G1-S
G1-S=VDS

= 0; ID=10µA11−V

=10µA; ID=0 11 − V

G1-S

= 0; I

G2-S

= 0; V

=10µA11−V

G2-S

= 0; ID=0 − 20 nA

=9V − 20 nA

G2-S

DYNAMIC CHARACTERISTICS

Common source; T

=25°C; V

amb

= 4 V; VDS= 9 V; self-biasing current; unless otherwise specified.

G2-S

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

y

 forward transfer admittance pulsed; Tj=25°C2430−mS

fs

C

ig1-ss

C

ig2-ss

C

oss

C

rss

F noise figure f = 800 MHz; Y
G

p

X

mod

input capacitance at gate 1 f = 1 MHz − 2.2 2.7 pF

input capacitance at gate 2 f = 1 MHz − 1.5 − pF

output capacitance f = 1 MHz − 1.3 − pF

reverse transfer capacitance f = 1 MHz − 25 40 fF

S=YS opt

power gain GS= 2 mS; BS=B

BL=B
G

S

BL=B

; f = 200 MHz; see Fig.16

L opt

= 3.3 mS; BS=B

; f = 800 MHz; see Fig.17

L opt

; GL= 0.5 mS;

S opt

; GL= 1 mS;

S opt

cross-modulation input level for k = 1% at 0 dB AGC;

fw= 50 MHz; f

= 60 MHz; see Fig.18

unw

input level for k = 1% at 40 dB AGC;
f

= 50 MHz; f

w

= 60 MHz; see Fig.18

unw

− 1.5 2.5 dB

− 38 − dB

− 20 − dB

85 −−dBµV

100 −−dBµV

1997 Dec 08 4

Philips Semiconductors Product specification

N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR

25

handbook, halfpage

I

D

(mA)

20

15

10

5

0

010

V

=4V.

G2-S

Tj=25°C.

2468

Fig.5 Output characteristics; typical values.

V

G1

MDA613

= 1.6 V

1.5 V

1.4 V

1.3 V

1.2 V

1.1 V
1 V

VDS (V)

40

handbook, halfpage

I

D

(mA)

30

V

= 4 V

G2-S

20

10

0

0

0.5 2.5

VDS=9V.
Tj=25°C.

1 1.5 2

Fig.6 Transfer characteristics; typical values.

MDA614

3.5 V
3 V

2.5 V

2 V

1.5 V

1 V

VG1 (V)

V

G2-S

2.5 V

= 4 V

I

D (mA)

MDA615

3.5 V

3 V

40

handbook, halfpage

y

fs

(mS)

30

20

10

0

0 102030

VDS=9V.
Tj=25°C.

2 V

Fig.7 Forward transfer admittance as a function

of drain current; typical values.

16

handbook, halfpage

I

D

(mA)

12

(2)

(3)

(1)

8

(4)

4

0

0

(1) VDS=9V.
(2) VDS=7V.

15

234

(3) VDS=5V.
(4) VDS=3V.

Fig.8 Drain current as a function of gate 2

voltage; typical values.

V

MDA616

G2-S

(V)

1997 Dec 08 5