Philips bf1108_bf1108r Datasheet

BF1108; BF1108R

Silicon RF switches

Rev. 04 — 29 May 2008 Product data sheet

1. Product profile

1.1 General description

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a
band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The
low loss and high isolation capabilities of these devices provide excellent RF switching
functions. The gate of the MOSFET can be isolated from ground with the diode, resulting
in low losses. Integrated diodes between gate and source and between gate and drain
protect against excessive input voltage surges.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features

n Specially designed for low loss RF switching up to 1 GHz

1.3 Applications

n Various RF switching applications such as:

u Passive loop through for VCR tuner
u Transceiver switching

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

L

ins(on)

ISL

off

R

DSon

V

GS(p)

[1] IF= diode forward current.

on-state insertion loss RS=RL=50Ω;f≤ 1 GHz;

off-state isolation RS=RL=50Ω; f ≤ 1 GHz;

drain-source on-state
resistance

gate-source pinch-off
voltage

V

SK=VDK

V

SK=VDK

VKS=0V; ID= 1 mA - 12 20 Ω

VDS=1V; ID=20µA-−3 −4V

=0V; IF=0mA

=5V; IF=1mA

[1]

--2dB

30--dB

NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

BF1108 (SOT143B)

1 FET gate; diode anode
2 diode cathode
3 source
4 drain

BF1108R (SOT143R)

1 FET gate; diode anode
2 diode cathode
3 source
4 drain

BF1108; BF1108R

Silicon RF switches

34

[1]
[1]

21

43

[1]
[1]

21

43

12

34

21

001aai042

001aai043

[1] Drain and source are interchangeable.

3. Ordering information

Table 3. Ordering information

Type number Package

BF1108 - plastic surface-mounted package; 4 leads SOT143B
BF1108R - plastic surface-mounted package; reverse pinning;

4. Marking

Table 4. Marking

Type number Marking code

BF1108 NGp
BF1108R NHp

Name Description Version

SOT143R

4 leads

BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 04 — 29 May 2008 2 of 10

NXP Semiconductors

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

FET

V

DS

V

SD

V

DG

V

SG

I

D

Diode

V

R

I

F

FET and diode

T

stg

T

j

BF1108; BF1108R

Silicon RF switches

drain-source voltage - 3 V
source-drain voltage - 3 V
drain-gate voltage - 7 V
source-gate voltage - 7 V
drain current - 10 mA

reverse voltage - 35 V
forward current - 100 mA

storage temperature −65 +150 °C
junction temperature - 150 °C

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-sp)

thermal resistance from junction
to solder point

[1] Soldering point of FET gate and diode anode lead.

7. Static characteristics

Table 7. Static characteristics

Tj = 25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

FET

V

(BR)GSS

V

GS(p)

I

DSX

I

GSS

R

DSon

Diode

V

F

I

R

gate-source breakdown
voltage

gate-source pinch-off voltage VDS=1V; ID=20µA- −3 −4V
drain cut-off current VGS= −5 V; VDS=2V--10µA
gate leakage current VGS= −5 V; VDS= 0 V - - 100 nA
drain-source on-state

resistance

forward voltage IF= 10 mA - - 1 V
reverse current VR=25V --50nA

[1]

250 K/W

VDS=0V; IGS= 0.1 mA 7 - - V

VGS=0V; ID= 1 mA - 12 20 Ω

= 20 V; T

V

R

=75°C--1µA

amb

BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 04 — 29 May 2008 3 of 10

NXP Semiconductors

8. Dynamic characteristics

Table 8. Dynamic characteristics

Common cathode; T

Symbol Parameter Conditions Min Typ Max Unit

FET and diode

L

ins(on)

ISL

R

DSon

C

i

C

o

Diode

C

d

r

D

[1] IF= diode forward current.
[2] Ci is the series connection of CGS and CGK; Co is the series connection of CGD and CGK.
[3] Guaranteed on AQL basis; inspection level S4, AQL 1.0.

on-state insertion loss VSK=VDK=0V; IF=0mA

off-state isolation VSK=VDK=5V; IF=1mA

off

drain-source on-state
resistance

input capacitance f = 1 MHz

output capacitance f = 1 MHz

diode capacitance f = 1 MHz; VR= 0 V - 1.1 - pF
diode forward resistance IF= 2 mA; f = 100 MHz

= 25°C.

amb

BF1108; BF1108R

Silicon RF switches

[1]

RS=RL=50Ω; f ≤ 1 GHz - - 2 dB
R
R

R
R
R

VKS=0V; ID= 1 mA - 12 20 Ω

VSK=VDK=5V; IF=1mA - 1 - pF
V

VSK=VDK=5V; IF=1mA - 1 - pF
V

=50Ω; f = 1 GHz - 1.3 - dB

S=RL

=75Ω; f ≤ 1 GHz - - 3 dB

S=RL

=50Ω; f ≤ 1 GHz 30 - - dB

S=RL

=50Ω; f = 1 GHz - 38 - dB

S=RL

=75Ω; f ≤ 1 GHz 30 - - dB

S=RL

[2]

SK=VDK

SK=VDK

=0V; IF= 0 mA - 0.65 0.9 pF

[2]

=0V; IF= 0 mA - 0.65 0.9 pF

[3]

- - 0.7 Ω

BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 04 — 29 May 2008 4 of 10

NXP Semiconductors

BF1108; BF1108R

Silicon RF switches

0

L

ins(on)

−1

−2

−3

−4

0 400 1200

800

mgs357

f (MHz)

VSK = VDK = 0 V; RS = RL = 50 Ω; IF = 0 mA (diode
forward current).

Measured in test circuit see Figure 3.

Fig 1. On-state insertion loss as a function of

frequency; typical values

0

ISL

off

−20

−40

−60

0 400 1200

800

mgs358

f (MHz)

VSK = VDK = 5 V; RS = RL = 50 Ω; IF = 1 mA (diode
forward current).

Measured in test circuit see Figure 3.

Fig 2. Off-state isolation as a function of frequency;

typical values

V

1 nF

On-state: V = 0 V.
Off-state: V = 5 V.

Fig 3. Test circuit

50 Ω
input

BF1108/BF1108R

1 nF

100 kΩ

47 kΩ

50 Ω

output

1 nF

4.7 kΩ

100 kΩ

1 nF

V

mbl028

BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 04 — 29 May 2008 5 of 10

NXP Semiconductors

BF1108; BF1108R

Silicon RF switches

9. Package outline

Plastic surface-mounted package; 4 leads SOT143B

D

y

e

b

p

B

w M

E

v M

A

B

H

E

A

X

34

Q

A

A

1

21

b

1

e

1

detail X

L

c

p

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

1.1

0.9

OUTLINE
VERSION

SOT143B

1

A

max

0.1

b

c

D

b

0.48

0.38

1

p

0.88

0.15

0.78

0.09

IEC JEDEC JEITA

E

3.0

1.4

2.8

1.2

REFERENCES

1.9

e

1.7

H

L

E

1

2.5

2.1

0.45

0.15

p

0.55

0.45

EUROPEAN

PROJECTION

e

ywvQ

0.1 0.10.2

ISSUE DATE

04-11-16
06-03-16

Fig 4. Package outline SOT143B

BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 04 — 29 May 2008 6 of 10

NXP Semiconductors

BF1108; BF1108R

Silicon RF switches

Plastic surface-mounted package; reverse pinning; 4 leads SOT143R

D

y

e

b

p

B

w M

E

v M

A

B

H

E

A

X

43

Q

A

A

1

c

12

L

b

e

1

1

detail X

p

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

1.1

mm

0.9

OUTLINE
VERSION

SOT143R SC-61AA

1

A

max

0.1

b

c

D

b

0.48

0.38

1

p

0.88

0.15

0.78

0.09

IEC JEDEC JEITA

E

3.0

1.4

2.8

1.2

REFERENCES

1.9

e

1.7

H

L

E

1

2.5

2.1

0.55

0.25

p

0.45

0.25

EUROPEAN

PROJECTION

e

ywvQ

0.1 0.10.2

ISSUE DATE

04-11-16
06-03-16

Fig 5. Package outline SOT143R

BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 04 — 29 May 2008 7 of 10

NXP Semiconductors

BF1108; BF1108R

Silicon RF switches

10. Abbreviations

Table 9. Abbreviations

Acronym Description

AQL Acceptable Quality Level
MOSFET Metal-Oxide Semiconductor Field-Effect Transistor
RF Radio Frequency
S4 Special inspection level 4
VCR VideoCassette Recorder

11. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BF1108_BF1108R_4 20080529 Product data sheet - BF1108_1108R_3
Modifications:

BF1108_1108R_3
(9397 750 06477)

BF1108_1108R_2
(9397 750 06073)

BF1108_1108R_1
(9397 750 05899)

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Symbol notation has been adapted to comply with the current guidelines of NXP

Semiconductors.

19991118 Product data sheet - BF1108_1108R_2

19990819 Product data sheet - BF1108_1108R_1

19990517 Preliminary specification - -

BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 04 — 29 May 2008 8 of 10

NXP Semiconductors

12. Legal information

12.1 Data sheet status

BF1108; BF1108R

Silicon RF switches

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The productstatus ofdevice(s) describedin thisdocument mayhave changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall haveno liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device.Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 04 — 29 May 2008 9 of 10

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 3

8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Contact information. . . . . . . . . . . . . . . . . . . . . . 9

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

BF1108; BF1108R

Silicon RF switches

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2008. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Document identifier: BF1108_BF1108R_4

Date of release: 29 May 2008