Philips bf1107_2 Datasheet

BF1107

N-channel single gate MOSFET

Rev. 04 — 9 January 2007 Product data sheet

1. Product profile

1.1 General description

The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss
and high isolation capabilities of this MOSFET provide excellent RF switching functions.
Integrated diodes between gate and source and between gate and drain protect against
excessive input voltage surges. Drain and source are interchangeable.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features

n Currentless RF switch

1.3 Applications

n Various RF switching applications such as:

u Passive loop through for VCR tuner
u Transceiver switching

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

L

ins(on)

ISL

R

DSon

V

GS(p)

off

on-state insertion loss VSG=VDG=0V;

f = 50 MHz to 860 MHz

R
R

off-state isolation VSG=VDG=5V;

f = 50 MHz to 860 MHz

R
R

drain-source on-state
resistance

gate-source pinch-off
voltage

VGS=0V; ID= 1 mA - 12 20 Ω

VDS=1V; ID=20µA-−3 −4.5 V

=50Ω - - 2.5 dB

S=RL

=75Ω - - 3.5 dB

S=RL

=50Ω 30--dB

S=RL

=75Ω 30--dB

S=RL

NXP Semiconductors

2. Pinning information

Table 2. Discrete pinning

Pin Description Simplified outline Symbol

1 drain
2 source
3 gate

[1] Drain and source are interchangeable

3. Ordering information

Table 3. Ordering information

Type number Package

BF1107 - plastic surface-mounted package; 3 leads SOT23

BF1107

N-channel single gate MOSFET

[1]
[1]

12

3

Name Description Version

1

3

2

sym120

4. Marking

Table 4. Marking

Type number Marking code

BF1107 S3p

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

SD

V

DG

V

SG

I

D

T

stg

T

j

drain-source voltage - 3 V
source-drain voltage - 3 V
drain-gate voltage - 7 V
source-gate voltage - 7 V
drain current - 10 mA
storage temperature −65 +150 °C
junction temperature - 150 °C

BF1107_4 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 04 — 9 January 2007 2 of 8

NXP Semiconductors

BF1107

N-channel single gate MOSFET

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-sp)

thermal resistance from junction

[1]

260 K/W

to solder point

[1] Soldering point of the gate lead.

7. Static characteristics

Table 7. Static characteristics

Tj=25°C.

Symbol Parameter Conditions Min Typ Max Unit

V

(BR)GSS

V

GS(p)

I

DSX

I

GSS

gate-source breakdown voltage VDS=0V; IGS= 0.1 mA 7 - - V
gate-source pinch-off voltage VDS=1V; ID=20µA-−3 −4.5 V
drain cut-off current VGS= −5 V; VDS=2V - - 10 µA
gate leakage current VGS= −5 V; VDS= 0 V - - 100 nA

8. Dynamic characteristics

Table 8. Dynamic characteristics

Common gate; T

Symbol Parameter Conditions Min Typ Max Unit

L

ins(on)

ISL

off

R

DSon

C

ig

C

og

=25°C.

amb

on-state insertion loss VSG=VDG= 0 V; f = 50 MHz to 860 MHz

R
R

=50Ω - - 2.5 dB

S=RL

=75Ω - - 3.5 dB

S=RL

off-state isolation VSG=VDG= 5 V; f = 50 MHz to 860 MHz

=50Ω 30 - - dB

S=RL

=75Ω 30 - - dB

S=RL

drain-source on-state

R
R

VGS=0V; ID= 1 mA - 12 20 Ω

resistance
input capacitance at gate f = 1 MHz

V

SG=VDG

V

SG=VDG

= 5 V - 0.9 - pF
= 0 V - 1.5 2 pF

output capacitance at gate f = 1 MHz

V

SG=VDG

V

SG=VDG

= 5 V - 0.9 - pF
= 0 V - 1.5 2 pF

BF1107_4 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 04 — 9 January 2007 3 of 8

NXP Semiconductors

BF1107

N-channel single gate MOSFET

0

L

ins(on)

(dB)

−1

−2

−3

−4

−5

10 10

(2)

(1)

2

10

001aaf760

f (MHz)

(1) RS=RL=50Ω
(2) RS=RL=75Ω

VSG=VDG=0V

Fig 1. On-state insertion loss as a function of

frequency; typical values

0

; RL

RL

in

out

(dB)

−5

0

ISL

off

(dB)

−20

−40

(2)

(1)

3

−60
10 10

2

10

001aaf780

3

f (MHz)

(1) RS=RL=50Ω
(2) RS=RL=75Ω

VSG=VDG=5V

Fig 2. Off-state isolation as a function of frequency;

typical values

001aaf781

−10

−15

(1)

−20

−25

10 10

(2)

2

10

f (MHz)

3

(1) RS=RL=50Ω
(2) RS=RL=75Ω

VSG=VDG=0V

Fig 3. Input and output return loss (on-state) as a function of frequency; typical values

BF1107_4 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 04 — 9 January 2007 4 of 8

NXP Semiconductors

BF1107

N-channel single gate MOSFET

9. Package outline

Plastic surface-mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

1.1

mm

0.9

OUTLINE

VERSION

SOT23 TO-236AB

1

A

max.

0.1

cD

b

p

0.48

0.15

0.38

0.09

IEC JEDEC JEITA

3.0

2.8

E

1.4

1.2

REFERENCES

1.9

e1H

e

0.95

2.5

2.1

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04
06-03-16

Fig 4. Package outline SOT23

BF1107_4 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 04 — 9 January 2007 5 of 8

NXP Semiconductors

N-channel single gate MOSFET

BF1107

10. Abbreviations

Table 9. Abbreviations

Acronym Description

MOSFET Metal-Oxide Semiconductor Field-Effect Transistor
RF Radio Frequency
VCR Videocassette Recorder

11. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BF1107_4 20070109 Product data sheet - BF1107_1107W_3
Modifications:

BF1107_1107W_3
(9397 750 05776)

BF1107_2
(9397 750 03969)

BF1107_N_1
(9397 750 03695)

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Symbol notation has been adapted to comply with the current guidelines of NXP

Semiconductors.

• Product type BF1107W has been removed from this data sheet.

19990514 Product data sheet - BF1107_2

19980622 Product data sheet - BF1107_N_1

19980407 Preliminary data sheet - -

BF1107_4 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 04 — 9 January 2007 6 of 8

NXP Semiconductors

12. Legal information

12.1 Data sheet status

BF1107

N-channel single gate MOSFET

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may havechanged since this document was published and maydiffer in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shall haveno liability for theconsequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) andtitle. A short data sheet is intended
for quickreference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction ofa NXP Semiconductors product can reasonably be expectedto
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

12.4 Trademarks

Notice: Allreferenced brands, product names, service names and trademarks
are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]

BF1107_4 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 04 — 9 January 2007 7 of 8

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 3

8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 3

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 6

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 7

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

13 Contact information. . . . . . . . . . . . . . . . . . . . . . 7

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

BF1107

N-channel single gate MOSFET

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 9 January 2007

Document identifier: BF1107_4