Philips BDX47, BDX45 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D100
BDX45; BDX47
PNP Darlington transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 02
Philips Semiconductors Product specification
PNP Darlington transistors BDX45; BDX47
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial switching applications such as:
– print hammers
– solenoids
– relay and lamp drivers.
DESCRIPTION
PNP Darlington transistor in a TO-126; SOT32 plastic
package. NPN complements: BDX42 and BDX44.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to metal part of
mounting surface
3 base
handbook, halfpage
3
123
Top view
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
2
1
MAM350
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BDX45 −−−60 V
BDX47 −−−90 V
V
CES
collector-emitter voltage VBE=0
BDX45 −−−45 V
BDX47 −−−80 V
I
C
P
tot
h
FE
f
T
collector current (DC) −−−1A
total power dissipation T
≤ 25 °C −−1.25 W
amb
T
≤ 100 °C −−5W
mb
DC current gain IC= −150 mA; VCE= −10 V 1000 −−
I
=−500 mA; VCE= −10 V 2000 −−
C
transition frequency IC= −500 mA; VCE= −5 V; f = 100 MHz − 200 − MHz
1997 Jul 02 2
Philips Semiconductors Product specification
PNP Darlington transistors BDX45; BDX47
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BDX45 −−60 V
BDX47 −−90 V
collector-emitter voltage VBE=0
BDX45 −−45 V
BDX47 −−80 V
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−2A
base current (DC) −−100 mA
total power dissipation T
≤ 25 °C − 1.25 W
amb
T
≤ 100 °C − 5W
mb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient in free air 100 K/W
thermal resistance from junction to mounting base 10 K/W
1997 Jul 02 3
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