Philips BDX37, BDX36, BDX35 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D100
BDX35; BDX36; BDX37
NPN switching transistors
Product specification
Supersedes data of September 1994
1997 Apr 16
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN switching transistors BDX35; BDX36; BDX37
FEATURES
• High current (max. 5 A)
• Low voltage (max. 75 V).
APPLICATIONS
• High-current switching in power applications.
DESCRIPTION
NPN switching transistor in a TO-126; SOT32 plastic
package.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to the metal part of
the mounting surface
3 base
handbook, halfpage
3
123
Top view
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
2
1
MAM254
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BDX35 −−100 V
BDX36; BDX37 −−120 V
V
CEO
collector-emitter voltage open base
BDX35; BDX36 −−60 V
BDX37 −−75 V
I
C
P
tot
h
FE
f
T
t
off
collector current (DC) −−5A
total power dissipation Tmb≤ 75 °C −−15 W
DC current gain IC= 0.5 A; VCE=10V 45 − 450
transition frequency IC= 0.5 A; VCE= 5 V; f = 100 MHz − 100 − MHz
turn-off time I
Con
= 5 A; I
Bon
= 0.5 A; I
= −0.5 A − 350 500 ns
Boff
1997 Apr 16 2
Philips Semiconductors Product specification
NPN switching transistors BDX35; BDX36; BDX37
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BDX35 − 100 V
BDX36; BDX37 − 120 V
collector-emitter voltage open base
BDX35; BDX36 − 60 V
BDX37 − 75 V
emitter-base voltage open collector − 5V
collector current (DC) − 5A
peak collector current − 10 A
peak base current − 2A
total power dissipation Tmb≤ 75 °C − 15 W
≤ 25 °C − 1.25 W
T
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient in free air 100 K/W
thermal resistance from junction to mounting base 5 K/W
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CBO
I
EBO
h
FE
collector cut-off current
BDX35 I
= 0; VCB=80V −−100 nA
E
I
= 0; VCB=80V; Tj= 100 °C −−10 µA
E
collector cut-off current
BDX36; BDX37 I
= 0; VCB= 100 V −−100 nA
E
= 0; VCB= 100 V; Tj= 100 °C −−10 µA
I
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 0.5 A; VCE= 10 V; see Fig.2
BDX35; BDX36 45 130 450
BDX37 45 80 450
V
V
CEsat
CEsat
collector-emitter saturation voltage IC= 5 A; IB= 0.5 A −−900 mV
collector-emitter saturation voltage
BDX35; BDX37 I
BDX36 I
= 7 A; IB= 0.7 A −−1.2 V
C
= 10 A; IB=1A −−2V
C
1997 Apr 16 3
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