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BDV65B(NPN),
BDV64B(PNP)
Complementary Silicon
Plastic Power Darlingtons
. . . for use as output devices in complementary general purpose
amplifier applications.
• High DC Current Gain − HFE = 1000 (min.) @ 5 Adc
• Monolithic Construction with Built−in Base Emitter Shunt Resistors
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak
Base Current
Total Device Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction Temperature
Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
TJ, T
stg
Symbol
R
q
JC
Max
100
100
5.0
10
20
0.5
125
1.0
–65 to
+150
Max
1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
_C
Unit
_C/W
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10 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100−120 VOLTS,
125 WATTS
NPN PNP
COLLECTOR 2,4
BASE
1
EMITTER 3
MARKING
DIAGRAM
AYWW
BDV6xBG
BASE
1
1
2
COLLECTOR 2
EMITTER 3
BDV65B BDV64B
SOT−93
(TO−218)
CASE 340D
3
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 13
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
BDV6xB = Device Code
x = 4 or 5
ORDERING INFORMATION
Device Package Shipping
BDV65B SOT−93 30 Units / Rail
BDV65BG SOT−93
(Pb−Free)
BDV64B SOT−93 30 Units / Rail
BDV64BG SOT−93
(Pb−Free)
1 Publication Order Number:
30 Units / Rail
30 Units / Rail
BDV65B/D
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1.0
0.8
0.6
0.4
DERATING FACTOR
0.2
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (1)
(I
= 30 mAdc, IB = 0)
C
Collector Cutoff Current
(V
= 50 Vdc, IB = 0)
CE
Collector Cutoff Current
(V
= 100 Vdc, IE = 0)
CB
Collector Cutoff Current
(V
= 50 Vdc, IE = 0, TC = 150_C)
CB
Emitter Cutoff Current
(V
= 5.0 Vdc, IC = 0)
BE
ON CHARACTERISTICS
DC Current Gain
(I
= 5.0 Adc, VCE = 4.0 Vdc)
C
Collector−Emitter Saturation Voltage
(I
= 5.0 Adc, IB = 0.02 Adc)
C
Base−Emitter Saturation Voltage
(I
= 5.0 Adc, VCE = 4.0 Vdc)
C
BDV65B (NPN), BDV64B (PNP)
0
0 25 50 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
75
Symbol
V
CEO(sus)
I
CEO
I
CBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
Min
100
−
−
−
−
1000
−
−
Max
−
1.0
0.4
2.0
5.0
−
2.0
2.5
Unit
Vdc
mAdc
mAdc
mAdc
mAdc
−
Vdc
Vdc
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2
Page 3
BDV65B (NPN), BDV64B (PNP)
NPN PNP
VCE = 4 V
10K
10K
1K
, DC CURRENT GAIN
FE
h
1K
4
0.1 1
Figure 2. DC Current Gain
10
1
V, VOLTAGE (V)
0.1
0.1
V
BE(sat)
IC, COLLECTOR CURRENT (A)
@ IC/IB = 250
1
I
, COLLECTOR CURRENT (A)
C
Figure 4. “On” Voltages
, DC CURRENT GAIN
FE
h
10
1
0.1 1
I
, COLLECTOR CURRENT (A)
C
10
Figure 3. DC Current Gain
10
1
V, VOLTAGE (V)
0.1
10
0.1 101
V
BE(sat)
@ IC/IB = 250
I
, COLLECTOR CURRENT (A)
C
Figure 5. “On” Voltages
100
50
20
10
, COLLECTOR CURRENT (A)
C
I
5
1
1
SECONDARY BREAKDOWN
LIMITED @ T
THERMAL LIMIT @ T
BONDING WIRE LIMIT
V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
v 150°C
J
= 25°C
C
BDV65B, BDV64B
10 50 100
5.0 ms
dc
Figure 6. Active Region Safe Operating Area
100 μs
1.0 ms
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
There are two limitations on the power handling ability of
The data of Figure 6 is based on T
= 150_C, TC is
J(pk)
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
may be calculated from the data in
J(pk)
J(pk)
Figure 7. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
30
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limitations imposed by second breakdown.
3
Page 4
1.0
0
0.5
BDV65B (NPN), BDV64B (PNP)
D = 0.5
0.2
0.1
(NORMALIZED)
0.05
0.03
r(t), TRANSIENT THERMAL RESISTANCE
0.01
0.2
0.05
0.02
0.01
0.1
(SINGLE PULSE)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
Z
= r(t) R
θ
JC(t)
R
θ
JC
θ
JC
= 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
2
READ TIME AT t
T
- TC = P
J(pk)
1
(pk)
Z
θ
0.01 0.05 0.1 0.5 1.0 5 10 50 100 100
t, TIME (ms)
Figure 7. Thermal Response
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
C
B
U
L
S
K
4
123
Q
E
A
D
J
H
V
G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
DIM MIN MAX MIN MAX
A --- 20.35 --- 0.801
B 14.70 15.20 0.579 0.598
C 4.70 4.90 0.185 0.193
D 1.10 1.30 0.043 0.051
E 1.17 1.37 0.046 0.054
G 5.40 5.55 0.213 0.219
H 2.00 3.00 0.079 0.118
J 0.50 0.78 0.020 0.031
K 31.00 REF 1.220 REF
L --- 16.20 --- 0.638
Q 4.00 4.10 0.158 0.161
S 17.80 18.20 0.701 0.717
U 4.00 REF 0.157 REF
V 1.75 REF 0.069
INCHESMILLIMETERS
JC(t)
500
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BDV65B/D
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