Philips BDV65B, BDV64B Service Manual
BDV65B(NPN),
BDV64B(PNP)
Complementary Silicon
Plastic Power Darlingtons
. . . for use as output devices in complementary general purpose
amplifier applications.
• High DC Current Gain − HFE = 1000 (min.) @ 5 Adc
• Monolithic Construction with Built−in Base Emitter Shunt Resistors
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak
Base Current
Total Device Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction Temperature
Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
TJ, T
stg
Symbol
R
q
JC
Max
100
100
5.0
10
20
0.5
125
1.0
–65 to
+150
Max
1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
_C
Unit
_C/W
http://onsemi.com
10 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100−120 VOLTS,
125 WATTS
NPN PNP
COLLECTOR 2,4
BASE
1
EMITTER 3
MARKING
DIAGRAM
AYWW
BDV6xBG
BASE
1
1
2
COLLECTOR 2
EMITTER 3
BDV65B BDV64B
SOT−93
(TO−218)
CASE 340D
3
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 13
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
BDV6xB = Device Code
x = 4 or 5
ORDERING INFORMATION
Device Package Shipping
BDV65B SOT−93 30 Units / Rail
BDV65BG SOT−93
(Pb−Free)
BDV64B SOT−93 30 Units / Rail
BDV64BG SOT−93
(Pb−Free)
1 Publication Order Number:
30 Units / Rail
30 Units / Rail
BDV65B/D
1.0
0.8
0.6
0.4
DERATING FACTOR
0.2
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (1)
(I
= 30 mAdc, IB = 0)
C
Collector Cutoff Current
(V
= 50 Vdc, IB = 0)
CE
Collector Cutoff Current
(V
= 100 Vdc, IE = 0)
CB
Collector Cutoff Current
(V
= 50 Vdc, IE = 0, TC = 150_C)
CB
Emitter Cutoff Current
(V
= 5.0 Vdc, IC = 0)
BE
ON CHARACTERISTICS
DC Current Gain
(I
= 5.0 Adc, VCE = 4.0 Vdc)
C
Collector−Emitter Saturation Voltage
(I
= 5.0 Adc, IB = 0.02 Adc)
C
Base−Emitter Saturation Voltage
(I
= 5.0 Adc, VCE = 4.0 Vdc)
C
BDV65B (NPN), BDV64B (PNP)
0
0 25 50 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
75
Symbol
V
CEO(sus)
I
CEO
I
CBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
Min
100
−
−
−
−
1000
−
−
Max
−
1.0
0.4
2.0
5.0
−
2.0
2.5
Unit
Vdc
mAdc
mAdc
mAdc
mAdc
−
Vdc
Vdc
http://onsemi.com
2
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