Philips BCX19 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D088
BCX19
NPN general purpose transistor
Product specification
Supersedes data of 1997 Mar 04
1999 Apr 12
Philips Semiconductors Product specification
NPN general purpose transistor BCX19
FEATURES
• High current (500 mA)
• Low voltage (45 V).
APPLICATIONS
• General purpose amplification
• Saturated switching and driver applications.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: BCX17.
MARKING
TYPE NUMBER MARKING CODE
BCX19 U8∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base; IC=10mA − 45 V
emitter-base voltage open collector − 5V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12 2
Philips Semiconductors Product specification
NPN general purpose transistor BCX19
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=20V −−100 nA
I
= 0; VCB=20V; Tj= 150 °C −−5µA
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain VCE= 1 V; note 1
I
= 100 mA 100 − 600
C
= 300 mA 70 −−
I
C
I
= 500 mA 40 −−
C
collector-emitter saturation
IC= 500 mA; IB= 50 mA; note 2 −−620 mV
voltage
base-emitter voltage IC= 500 mA; VCE= 1 V; notes 1 and 2 −−1.2 V
collector capacitance IE=Ie= 0; VCB=10V; f=1MHz − 5 − pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 −−MHz
Notes
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2. VBE decreases by approximately −2 mV/°C with increasing temperature.
1999 Apr 12 3
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