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DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D088
BCX19
NPN general purpose transistor
Product specification
Supersedes data of 1997 Mar 04
1999 Apr 12
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Philips Semiconductors Product specification
NPN general purpose transistor BCX19
FEATURES
• High current (500 mA)
• Low voltage (45 V).
APPLICATIONS
• General purpose amplification
• Saturated switching and driver applications.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: BCX17.
MARKING
TYPE NUMBER MARKING CODE
BCX19 U8∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base; IC=10mA − 45 V
emitter-base voltage open collector − 5V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12 2
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Philips Semiconductors Product specification
NPN general purpose transistor BCX19
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=20V −−100 nA
I
= 0; VCB=20V; Tj= 150 °C −−5µA
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain VCE= 1 V; note 1
I
= 100 mA 100 − 600
C
= 300 mA 70 −−
I
C
I
= 500 mA 40 −−
C
collector-emitter saturation
IC= 500 mA; IB= 50 mA; note 2 −−620 mV
voltage
base-emitter voltage IC= 500 mA; VCE= 1 V; notes 1 and 2 −−1.2 V
collector capacitance IE=Ie= 0; VCB=10V; f=1MHz − 5 − pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 −−MHz
Notes
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2. VBE decreases by approximately −2 mV/°C with increasing temperature.
1999 Apr 12 3