
DISCRETE SEMICONDUCTORS
BCX17; BCX18
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 May 31
2004 Jan 16

NXP Semiconductors Product data sheet
PNP general purpose transistors BCX17; BCX18
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Saturated switching and driver applications e.g. for
industrial service
• Thick and thin-film circuits.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN
complement: BCX19.
MARKING
T YPE NUMBER MARKING CODE
(1)
BCX17 T1*
BCX18 T2*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
BCX17 − plastic surface mounted pack ag e; 3 leads SOT23
BCX18
2004 Jan 16 2

NXP Semiconductors Product data sheet
PNP general purpose transistors BCX17; BCX18
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter
BCX17 − −50 V
BCX18 − −30 V
collector-emitter voltage open base
BCX17 − −45 V
BCX18 − −25 V
emitter-base voltage open collector − −5 V
collector current (DC) − −500 mA
peak collector current − −1 A
peak base current − −200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16 3

NXP Semiconductors Product data sheet
PNP general purpose transistors BCX17; BCX18
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
f
T
Note
1. VBE decreases by approximately −2 mV/°C with increasing temperature.
collector cut-off current IE = 0; VCB = −20 V − − −100 nA
IE = 0; VCB = −20 V; Tj = 150 °C − − −5 μA
emitter cut-off current IC = 0; VEB = −5 V − − −100 nA
DC current gain IC = −100 mA; VCE = −1 V 100 − 600
IC = −300 mA; VCE = −1 V 70 − −
IC = −500 mA; VCE = −1 V 40 − −
collector-emitter saturation voltage IC = −500 mA; IB = −50 mA − − −620 mV
base-emitter voltage IC = −500 mA; VCE = −1 V; note 1 − − −1.2 V
collector capacitance IE = Ie = 0; VCB = −10 V; f = 1 MHz − 9 − pF
transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 80 − − MHz
2004 Jan 16 4

NXP Semiconductors Product data sheet
PNP general purpose transistors BCX17; BCX18
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads SOT2
D
3
A
A
1
12
e
1
b
p
e
w
M
B
E
H
E
detail X
AB
Q
L
p
X
v
M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
max.
0.1
b
cD
p
0.48
0.15
0.38
0.09
IEC JEDEC JEITA
3.0
2.8
E
1.4
1.2
REFERENCES
1.9
e
e
0.95
H
L
Qwv
1
2.5
2.1
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Jan 16 5

NXP Semiconductors Product data sheet
PNP general purpose transistors BCX17; BCX18
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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specifications and product descriptions, at any time and
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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http://www.nxp.com/profile/terms, including those
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Export control ⎯ This document as well as the item(s)
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regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2004 Jan 16 6
60134) may cause permanent damage to

NXP Semiconductors
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands R75/04/pp7 Date of release: 2004 Jan 16 Document order number: 9397 750 12406