Philips BCW89 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D088
BCW89
PNP general purpose transistor
Product specification
Supersedes data of 1997 Mar 11
1999 Apr 15
Philips Semiconductors Product specification
PNP general purpose transistor BCW89
FEATURES
PINNING
• Low current (max. 100 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
handbook, halfpage
PNP transistor in a SOT23 plastic package.
MARKING
TYPE NUMBER MARKING CODE
(1)
BCW89 H3∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PIN DESCRIPTION
1 base
2 emitter
3 collector
Top view
3
1
21
MAM256
3
2
Fig.1 Simplified outline (SOT23) and symbol.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−80 V
collector-emitter voltage open base; IC= −2mA −−60 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 15 2
Philips Semiconductors Product specification
PNP general purpose transistor BCW89
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
f
T
F noise figure I
thermal resistance from junction to ambient note 1 500 K/W
.
collector cut-off current IE= 0; VCB= −20 V −−−100 nA
I
= 0; VCB= −20 V; Tj= 100 °C −−−10 µA
E
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −10 µA; VCE= −5V − 90 −
I
= −2 mA; VCE= −5 V 120 − 260
C
collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−80 −300 mV
I
= −50 mA; IB= −2.5 mA −−150 − mV
C
base-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−720 − mV
I
= −50 mA; IB= −2.5 mA −−810 − mV
C
base-emitter voltage IC= −2 mA; VCE= −5V −600 −−750 mV
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 4.5 − pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz − 150 − MHz
= −200 µA; VCE= −5 V; RS=2kΩ;
C
−−10 dB
f = 1 kHz; B = 200 Hz
1999 Apr 15 3
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