Philips bcw81 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
ok, halfpage
M3D088
BCW81
NPN general purpose transistor
Product specification
Supersedes data of September 1994
1997 Apr 02
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN general purpose transistor BCW81
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
PINNING
PIN DESCRIPTION
1 base
2 emitter
APPLICATIONS
3 collector
• General purpose switching and high gain amplification.
DESCRIPTION
handbook, halfpage
3
3
NPN transistor in a SOT23 plastic package.
1
MARKING
TYPE NUMBER MARKING CODE
BCW81 K3p
Top view
21
MAM255
2
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
f
CBO
CEO
CM
tot
FE
T
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 45 V
peak collector current − 200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
DC current gain IC= 2 mA; VCE= 5 V 420 800
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 − MHz
1997 Apr 02 2
Philips Semiconductors Product specification
NPN general purpose transistor BCW81
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base; IC=2mA − 45 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
f
T
F noise figure I
collector cut-off current IE= 0; VCB=20V −−100 nA
= 0; VCB= 20 V; Tj= 100 °C −−10 µA
I
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 2 mA; VCE= 5 V 420 − 800
collector-emitter saturation
voltage
IC= 10 mA; IB= 0.5 mA − 120 250 mV
= 50 mA; IB= 2.5 mA − 210 − mV
I
C
base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA − 750 − mV
= 50 mA; IB= 2.5 mA − 850 − mV
I
C
base-emitter voltage IC= 2 mA; VCE= 5 V 550 − 700 mV
collector capacitance IE=Ie= 0; VCB=10V; f=1MHz − 2.5 − pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 −−MHz
= 200 µA; VCE=5V; RS=2kΩ;
C
−−10 dB
f = 1 kHz; B = 200 Hz
1997 Apr 02 3
Loading...