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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BCW61 series
PNP general purpose transistors
Product specification
Supersedes data of 1997 May 28
1999 Apr 12
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Philips Semiconductors Product specification
PNP general purpose transistors BCW61 series
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 32 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: BCW60.
MARKING
TYPE NUMBER MARKING CODE
BCW61B BB∗
BCW61C BC∗
BCW61D BD∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−32 V
collector-emitter voltage open base −−32 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12 2
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Philips Semiconductors Product specification
PNP general purpose transistors BCW61 series
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −32 V −−−20 nA
I
= 0; VCB= −32 V; T
E
= 150 °C −−−20 µA
amb
emitter cut-off current IC= 0; VEB= −4V −−−20 nA
DC current gain IC= −10 µA; VCE= −5V
BCW61B 30 −−
BCW61C 40 −−
BCW61D 100 −−
DC current gain I
= −2 mA; VCE= −5V
C
BCW61B 180 − 310
BCW61C 250 − 460
BCW61D 380 − 630
DC current gain I
= −50 mA; VCE= −1V
C
BCW61B 80 −−
BCW61C 100 −−
BCW61D 110 −−
collector-emitter saturation voltage IC= −10 mA; IB= −0.25 mA −60 −−250 mV
I
= −50 mA; IB= −1.25 mA −120 −−550 mV
C
base-emitter saturation voltage IC= −10 mA; IB= −0.25 mA −600 −−850 mV
I
= −50 mA; IB= −1.25 mA −0.68 −−1.05 V
C
base-emitter voltage IC= −2 mA; VCE= −5V −600 −650 −750 mV
I
= −10 µA; VCE= −5V −−550 − mV
C
I
= −50 mA; VCE= −1V −−720 − mV
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 4.5 − pF
emitter capacitance IC=ic= 0; VEB= −0.5 V; f = 1 MHz − 11 − pF
transition frequency IC= −10 mA; VCE= −5V;
100 −−MHz
f = 100 MHz; note 1
= −200 µA; VCE= −5V;
C
− 26dB
RS=2kΩ; f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 12 3