Philips BCW61B, BCW61A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BCW61 series
PNP general purpose transistors
Product specification
Supersedes data of 1997 May 28
1999 Apr 12
Philips Semiconductors Product specification
PNP general purpose transistors BCW61 series
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 32 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: BCW60.
MARKING
TYPE NUMBER MARKING CODE
BCW61B BB∗
BCW61C BC∗
BCW61D BD∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−32 V
collector-emitter voltage open base −−32 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12 2
Philips Semiconductors Product specification
PNP general purpose transistors BCW61 series
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −32 V −−−20 nA
I
= 0; VCB= −32 V; T
E
= 150 °C −−−20 µA
amb
emitter cut-off current IC= 0; VEB= −4V −−−20 nA
DC current gain IC= −10 µA; VCE= −5V
BCW61B 30 −−
BCW61C 40 −−
BCW61D 100 −−
DC current gain I
= −2 mA; VCE= −5V
C
BCW61B 180 − 310
BCW61C 250 − 460
BCW61D 380 − 630
DC current gain I
= −50 mA; VCE= −1V
C
BCW61B 80 −−
BCW61C 100 −−
BCW61D 110 −−
collector-emitter saturation voltage IC= −10 mA; IB= −0.25 mA −60 −−250 mV
I
= −50 mA; IB= −1.25 mA −120 −−550 mV
C
base-emitter saturation voltage IC= −10 mA; IB= −0.25 mA −600 −−850 mV
I
= −50 mA; IB= −1.25 mA −0.68 −−1.05 V
C
base-emitter voltage IC= −2 mA; VCE= −5V −600 −650 −750 mV
I
= −10 µA; VCE= −5V −−550 − mV
C
I
= −50 mA; VCE= −1V −−720 − mV
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 4.5 − pF
emitter capacitance IC=ic= 0; VEB= −0.5 V; f = 1 MHz − 11 − pF
transition frequency IC= −10 mA; VCE= −5V;
100 −−MHz
f = 100 MHz; note 1
= −200 µA; VCE= −5V;
C
− 26dB
RS=2kΩ; f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 12 3
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