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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BCW60 series
NPN general purpose transistors
Product specification
Supersedes data of 1997 Mar 10
1999 Apr 22
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Philips Semiconductors Product specification
NPN general purpose transistors BCW60 series
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 32 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCW61 series.
MARKING
TYPE NUMBER MARKING CODE
BCW60B AB∗
BCW60C AC∗
BCW60D AD∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 32 V
collector-emitter voltage open base − 32 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 22 2
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Philips Semiconductors Product specification
NPN general purpose transistors BCW60 series
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=32V −−20 nA
I
= 0; VCB=32V; T
E
= 150 °C −−20 µA
amb
emitter cut-off current IC= 0; VEB=4V −−20 nA
DC current gain IC=10µA; VCE=5V
BCW60B 20 −−
BCW60C 40 −−
BCW60D 100 −−
DC current gain I
= 2 mA; VCE=5V
C
BCW60B 180 − 310
BCW60C 250 − 460
BCW60D 380 − 630
DC current gain I
= 50 mA; VCE=1V
C
BCW60B 70 −−
BCW60C 90 −−
BCW60D 100 −−
collector-emitter saturation
voltage
IC= 10 mA; IB= 0.25 mA 50 − 350 mV
I
= 50 mA; IB= 1.25 mA 100 − 550 mV
C
base-emitter saturation voltage IC= 10 mA; IB= 0.25 mA 600 − 850 mV
I
= 50 mA; IB= 1.25 mA 0.7 − 1.05 V
C
base-emitter voltage IC=10µA; VCE=5V − 520 − mV
I
= 2 mA; VCE= 5 V 550 650 750 mV
C
I
= 50 mA; VCE=1V − 780 − mV
C
collector capacitance IE=ie= 0; VCB=10V; f=1MHz − 1.7 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 11 − pF
transition frequency IC= 10 mA; VCE=5V;
100 250 − MHz
f = 100 MHz; note 1
= 200 µA; VCE=5V;
C
− 26dB
RS=2kΩ; f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 22 3