Philips BCW60D, BCW60C, BCW60B Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BCW60 series
NPN general purpose transistors
Product specification
Supersedes data of 1997 Mar 10
1999 Apr 22
Philips Semiconductors Product specification
NPN general purpose transistors BCW60 series
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 32 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCW61 series.
MARKING
TYPE NUMBER MARKING CODE
BCW60B AB∗
BCW60C AC∗
BCW60D AD∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 32 V
collector-emitter voltage open base − 32 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 22 2
Philips Semiconductors Product specification
NPN general purpose transistors BCW60 series
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=32V −−20 nA
I
= 0; VCB=32V; T
E
= 150 °C −−20 µA
amb
emitter cut-off current IC= 0; VEB=4V −−20 nA
DC current gain IC=10µA; VCE=5V
BCW60B 20 −−
BCW60C 40 −−
BCW60D 100 −−
DC current gain I
= 2 mA; VCE=5V
C
BCW60B 180 − 310
BCW60C 250 − 460
BCW60D 380 − 630
DC current gain I
= 50 mA; VCE=1V
C
BCW60B 70 −−
BCW60C 90 −−
BCW60D 100 −−
collector-emitter saturation
voltage
IC= 10 mA; IB= 0.25 mA 50 − 350 mV
I
= 50 mA; IB= 1.25 mA 100 − 550 mV
C
base-emitter saturation voltage IC= 10 mA; IB= 0.25 mA 600 − 850 mV
I
= 50 mA; IB= 1.25 mA 0.7 − 1.05 V
C
base-emitter voltage IC=10µA; VCE=5V − 520 − mV
I
= 2 mA; VCE= 5 V 550 650 750 mV
C
I
= 50 mA; VCE=1V − 780 − mV
C
collector capacitance IE=ie= 0; VCB=10V; f=1MHz − 1.7 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 11 − pF
transition frequency IC= 10 mA; VCE=5V;
100 250 − MHz
f = 100 MHz; note 1
= 200 µA; VCE=5V;
C
− 26dB
RS=2kΩ; f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 22 3
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