Philips BCW31, BCW32 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D088
BCW31; BCW32; BCW33
NPN general purpose transistors
Product specification
Supersedes data of 1997 Jan 29
1999 Apr 13
Philips Semiconductors Product specification
NPN general purpose transistors BCW31; BCW32; BCW33
FEATURES
• Low current (100 mA)
• Low voltage (32 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistors in a plastic SOT23 package.
PNP complements: BCW29 and BCW30.
MARKING
TYPE NUMBER MARKING CODE
BCW31 D1∗
BCW32 D2∗
BCW33 D3∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 32 V
collector-emitter voltage open base; IC=2mA − 32 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 13 2
Philips Semiconductors Product specification
NPN general purpose transistors BCW31; BCW32; BCW33
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
f
T
F noise figure I
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=32V −−100 nA
I
= 0; VCB=32V; Tj= 100 °C −−10 µA
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC=10µA; VCE=5V
BCW31 − 90 −
BCW32 − 150 −
BCW33 − 270 −
DC current gain I
= 2 mA; VCE=5V
C
BCW31 110 − 220
BCW32 200 − 450
BCW33 420 − 800
collector-emitter saturation
voltage
base-emitter saturation
voltage
IC= 10 mA; IB= 0.5 mA − 120 250 mV
I
= 50 mA; IB= 2.5 mA − 210 − mV
C
IC= 10 mA; IB= 0.5 mA − 750 − mV
I
= 50 mA; IB= 2.5 mA − 850 − mV
C
base-emitter voltage IC= 2 mA; VCE= 5 V 550 − 700 mV
collector capacitance IE=Ie= 0; VCB=10V; f=1MHz − 2.5 − pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 −−MHz
= 200 µA; VCE=5V; RS=2kΩ;
C
−−10 dB
f = 1 kHz; B = 200 Hz
1999 Apr 13 3
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