Philips BCW30, BCW29 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BCW29; BCW30
PNP general purpose transistors
Product specification
Supersedes data of 1997 Sep 03
1999 Apr 13
Philips Semiconductors Product specification
PNP general purpose transistors BCW29; BCW30
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 32 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BCW31 and BCW32.
MARKING
TYPE NUMBER MARKING CODE
BCW29 C1∗
BCW30 C2∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline SOT23 and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−32 V
collector-emitter voltage open base; IC= −2mA −−32 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 13 2
Philips Semiconductors Product specification
PNP general purpose transistors BCW29; BCW30
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
f
T
F noise figure I
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −32 V −−−100 nA
I
= 0; VCB= −32 V; Tj= 100 °C −−−10 µA
E
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −10 µA; VCE= −5V
BCW29 − 90 −
BCW30 − 150 −
DC current gain I
= −2 mA; VCE= −5V
C
BCW29 120 − 260
BCW30 215 − 500
collector-emitter saturation
voltage
IC= −10 mA; IB= −0.5 mA −−80 −300 mV
I
= −50 mA; IB= −2.5 mA −−150 − mV
C
base-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−720 − mV
I
= −50 mA; IB= −2.5 mA −−810 − mV
C
base-emitter voltage IC= −2 mA; VCE= −5V −600 −−750 mV
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 4.5 − pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 −−MHz
= −200 µA; VCE= −5 V; RS=2kΩ;
C
−−10 dB
f = 1 kHz; B = 200 Hz
1999 Apr 13 3
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