Philips bcv64b Datasheet

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BCV64B

PNP general-purpose double transistor

Rev. 4 — 2 August 2010 Product data sheet

1. Product profile

1.1 General description

PNP general-purpose double transistor in a small SOT143B Surface-Mounted Device (SMD) plastic package.

Table 1. Product overview

Type number Package PNP complement

BCV64B SOT143B - BCV63B

1.2 Features and benefits

NXP JEITA

 Low current (max. 100 mA)  Low voltage (max. 30 V and 6 V)  AEC-Q101 qualified  Small SMD plastic package

1.3 Applications

 General-purpose switching and amplification  For use in Schmitt trigger applications

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

Transistor TR1

CEO

Transistor TR2

CEO

collector current - - −100 mA

collector-emitter voltage open base - - −30 V DC current gain VCE= −5mV;

= −2mA

collector-emitter voltage open base - - −6V DC current gain VCE= −700 V;

IC= −2mA

220 - 475

[1]

220 - 475

[1] Due to matched dies, hFE values for TR2 are the same as for TR1.

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2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

1 collector TR2 and base TR1 2 collector TR1 3 emitter TR1 and TR2 4baseTR2

3. Ordering information

Table 4. Ordering information

Type number Package

BCV64B - plastic surface-mounted package; 4 leads SOT143B

BCV64B

PNP general-purpose double transistor

Name Description Version

TR1

TR2

006aab23

4. Marking

Table 5. Marking codes

Type number Marking code

BCV64B *C6

[1] * = -: made in Hong Kong

* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China

[1]

Product data sheet Rev. 4 — 2 August 2010 2 of 12

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NXP Semiconductors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

EBO

Transistor TR1

CBO

CEO

Transistor TR2

CBO

CEO

Per device

tot

amb

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB).

BCV64B

PNP general-purpose double transistor

emitter-base voltage open collector - −6V collector current - −100 mA peak collector current - −200 mA base current - −100 mA

collector-base voltage open emitter - −30 V collector-emitter voltage open base - −30 V

collector-base voltage open emitter - −6V collector-emitter voltage open base - −6V

total power dissipation T

amb

≤ 25 °C junction temperature - 150 °C ambient temperature −65 +150 °C storage temperature −65 +150 °C

[1]

-250mW

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

[1] Device mounted on an FR4 PCB.

thermal resistance from junction to ambient

in free air

[1]

- - 500 K/W

Product data sheet Rev. 4 — 2 August 2010 3 of 12

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NXP Semiconductors

7. Characteristics

Table 8. Characteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

CBO

CEsat

BEsat

Transistor TR1

CEsat

BEsat

Transistor TR2

CEsat

[1] Due to matched dies, hFE values for TR2 are the same as for TR1. [2] V [3] V

PNP general-purpose double transistor

collector-base cut-off current

collector-emitter saturation voltage

base-emitter saturation voltage

DC current gain VCE= −5V;

collector-emitter saturation voltage

base-emitter saturation voltage

base-emitter voltage IC= −2mA;

transition frequency VCE= −5V;

collector capacitance VCB= −10 V;

DC current gain VCE= −700 mV;

collector-emitter saturation voltage

base-emitter voltage IC= −2mA;

decreases by about 1.7 mV/K with increasing temperature.

BEsat

decreases by about 2 mV/K with increasing temperature.

VCB= −30 V; IE=0A - - −15 nA

= −30 V ; IE=0A;

=150°C

IC= −10 mA; I

= −0.5 mA

IC= −10 mA; IB= −0.5 mA

= −2mA

IC= −100 mA; IB= −5mA

= −5V

= −10 mA;

VCE= −5V

= −10 mA;

f=100MHz

=0A;

E=ie

f=1MHz

= −2mA

IC= −100 mA; I

= −5mA

= −700 mV

BCV64B

--−5 μA

- −75 −300 mV

[2]

- −700 - mV

220 - 475

- −250 −650 mV

[2]

- −850 - mV

[3]

−600 −650 −750 mV

[3]

--−820 mV

100 - - MHz

-4-pF

[1]

220 - 475

- −250 - mV

[3]

- −700 - mV

Product data sheet Rev. 4 — 2 August 2010 4 of 12

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NXP Semiconductors

BCV64B

PNP general-purpose double transistor

mgt715

IC (mA)

−10

1000

800

600

400

200

−10

(1)

(2)

(3)

−2

−10

−1

−1 −10 −10

VCE= −5V

amb amb amb

= 150 °C =25°C = −55 °C

(1) T (2) T (3) T

Fig 1. DC current gain as a function of collector

current; typical values

mgt716

IC (mA)

−10

(mV)

−1200

−1000

−800

−600

−400

−200

(1) T (2) T (3) T

−10

−2

CE amb amb amb

−1

−10

= −5V

= −55 °C =25°C = 150 °C

(1)

(2)

(3)

−1 −10 −10

Fig 2. Base-emitter voltage as a function of collector

current; typical values

IC (mA)

mgt717

−10

(mV)

−10

CEsat

−10

(1)

(3)

(2)

−1

−1 −10 −10

IC/IB=20

amb amb amb

= 150 °C =25°C = −55 °C

(1) T (2) T (3) T

Fig 3. Collector-emitter saturation voltage as a

function of collector current; typical values

IC (mA)

mgt718

−10

(mV)

BEsat

−1200

−1000

−800

−600

−400

−200

(1) T (2) T (3) T

−10

C/IB

−1

amb amb amb

(1)

(2)

(3)

−1 −10 −10

=20

= −55 °C =25°C = 150 °C

Fig 4. Base-emitter saturation voltage as a function

of collector current; typical val ue s

Product data sheet Rev. 4 — 2 August 2010 5 of 12

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NXP Semiconductors

8. Application information

BCV64B

PNP general-purpose double transistor

Fig 5. Schmitt trigger application

9. Test information

9.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.

TR2

3 3

TR1

mgd82

Product data sheet Rev. 4 — 2 August 2010 6 of 12

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10. Package outline

Fig 6. Package outline SOT143B

2.5

2.1

1.4

1.2

0.88

0.78

3.0

2.8

1.9

BCV64B

PNP general-purpose double transistor

1.1

0.9

0.45

0.15

1.7

0.48

0.38

0.15

0.09

04-11-16Dimensions in mm

11. Packing information

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

BCV64B SOT143B 4 mm pitch, 8 mm tape and reel -215 -235

[1] For further information and the availability of packing methods, see Section 15.

[1]

3000 10000

Product data sheet Rev. 4 — 2 August 2010 7 of 12

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12. Soldering

BCV64B

PNP general-purpose double transistor

3.25

0.6

(3×)

0.5

(3×)

1.9

0.6

0.7 (3×)

(3×)

0.60.7

0.75 0.95

0.9

Fig 7. Reflow soldering footprint SOT143B

4.45

2.2

1.2

(3×)

solder lands

solder resist

Dimensions in mm

1.425 (3×)

solder paste

occupied area

sot143b_

solder lands

4.6

2.575

Dimensions in mm

1.425

preferred transport direction during soldering

1.2

solder resist

occupied area

sot143b_

Fig 8. Wave soldering footprint SOT143B

Product data sheet Rev. 4 — 2 August 2010 8 of 12

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NXP Semiconductors

PNP general-purpose double transistor

BCV64B

13. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BCV64B v.4 20100802 Product data sheet - BCV64B_3 Modifications:

BCV64B_3 19990521 Product specification - BCV64_CNV_2 BCV64_CNV_2 19970310 Product specification - -

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Section 1 “Product profile”: amended.

• Section 3 “Ordering information”: added.

• Section 4 “Marking”: updated.

• Figure 1, 2, 3 and 4: added.

• Section 8 “Application information”: added.

• Section 9 “Test information”: added.

• Figure 6: superseded by minimized package outline drawing.

• Section 11 “Packing information”: added.

• Section 12 “Soldering”: added.

• Section 14 “Legal information”: updated.

Product data sheet Rev. 4 — 2 August 2010 9 of 12

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NXP Semiconductors

BCV64B

PNP general-purpose double transistor

14. Legal information

14.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

14.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

14.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonabl y be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

, unless otherwise

Product data sheet Rev. 4 — 2 August 2010 10 of 12

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NXP Semiconductors

BCV64B

PNP general-purpose double transistor

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

14.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

15. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 4 — 2 August 2010 11 of 12

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NXP Semiconductors

16. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Application information. . . . . . . . . . . . . . . . . . . 6

9 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

9.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6

10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

11 Packing information . . . . . . . . . . . . . . . . . . . . . 7

12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

15 Contact information. . . . . . . . . . . . . . . . . . . . . 11

16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

BCV64B

PNP general-purpose double transistor

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 2 August 2010

Document identifier: BCV64B