Philips BCV49, BCV29 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
BCV29; BCV49
NPN Darlington transistors
Product specification
Supersedes data of 1997 Apr 21
1999 Apr 08
Philips Semiconductors Product specification
NPN Darlington transistors BCV29; BCV49
FEATURES
• High current (max. 500 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 60 V)
• High DC current gain (min. 20000).
APPLICATIONS
• Preamplifier input applications.
DESCRIPTION
handbook, halfpage
NPN small-signal Darlington transistor in a surface mount
SOT89 plastic package. PNP complements: BCV28 and
BCV48.
MARKING
Bottom view
TYPE NUMBER MARKING CODE
BCV29 EF
Fig.1 Simplified outline (SOT89) and symbol.
BCV49 EG
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 emitter
2 collector
3 base
123
32
TR1
TR2
1
MAM300
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BCV29 − 40 V
BCV49 − 80 V
V
CES
collector-emitter voltage VBE=0
BCV29 − 30 V
BCV49 − 60 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 10 V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
2
.
1999 Apr 08 2
Philips Semiconductors Product specification
NPN Darlington transistors BCV29; BCV49
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BEon
f
T
thermal resistance from junction to ambient note 1 96 K/W
thermal resistance from junction to soldering point 16 K/W
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector cut-off current
BCV29 I
BCV49 I
= 0; VCB=30V −−100 nA
E
= 0; VCB=60V −−100 nA
E
emitter cut-off current IC= 0; VEB=10V −−100 nA
DC current gain VCE= 5 V; see Fig.2
BCV29 I
DC current gain V
BCV49 I
= 1 mA 4000 −−
C
= 10 mA 10000 −−
I
C
I
= 100 mA 20000 −−
C
I
= 500 mA 4000 −−
C
= 5 V; see Fig.2
CE
= 1 mA 2000 −−
C
I
= 10 mA 4000 −−
C
= 100 mA 10000 −−
I
C
I
= 500 mA 2000 −−
C
collector-emitter saturation voltage IC= 100 mA; IB= 0.1 mA −−1V
base-emitter saturation voltage IC= 100 mA; IB= 0.1 mA −−1.5 V
base-emitter on-state voltage IC= 10 mA; VCE=5V −−1.4 V
transition frequency IC= 30 mA; VCE= 5 V; f = 100 MHz − 220 − MHz
1999 Apr 08 3
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