Philips BCV48, BCV28 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
BCV28; BCV48
PNP Darlington transistors
Product specification
Supersedes data of 1997 Apr 21
1999 Apr 08
Philips Semiconductors Product specification
PNP Darlington transistors BCV28; BCV48
FEATURES
PINNING
• Very high DC current gain (min. 10000)
• High current (max. 500 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• Where very high amplification is required.
handbook, halfpage
DESCRIPTION
PNP Darlington transistor in a SOT89 plastic package.
NPN complements: BCV29 and BCV49.
MARKING
TYPE NUMBER MARKING CODE
Bottom view
BCV28 ED
BCV48 EE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PIN DESCRIPTION
1 emitter
2 collector
3 base
32
TR1
TR2
123
1
MAM301
Fig.1 Simplified outline (SOT89) and symbol.
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BCV28 −−40 V
BCV48 −−80 V
V
CES
collector-emitter voltage VBE=0
BCV28 −−30 V
BCV48 −−60 V
V
I
I
I
P
T
T
T
EBO
C
CM
B
tot
stg
j
amb
emitter-base voltage open collector −−10 V
collector current (DC) −−500 mA
peak collector current −−800 mA
base current (DC) −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
2
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
.
1999 Apr 08 2
Philips Semiconductors Product specification
PNP Darlington transistors BCV28; BCV48
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BEon
f
T
thermal resistance from junction to ambient note 1 96 K/W
thermal resistance from junction to soldering point 16 K/W
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector cut-off current
BCV28 I
BCV48 I
= 0; VCB= −30 V −−−100 nA
E
= 0; VCB= −60 V −−−100 nA
E
emitter cut-off current IC= 0; VBE= −10 V −−−100 nA
DC current gain IC= −1 mA; VCE= −5 V; see Fig.2
BCV28 4000 −−
BCV48 2000 −−
DC current gain I
= −10 mA; VCE= −5 V; see Fig.2
C
BCV28 10000 −−
BCV48 4000 −−
DC current gain I
= −100 mA; VCE= −5 V; see Fig.2
C
BCV28 20000 −−
BCV48 10000 −−
DC current gain I
= −500 mA; VCE= −5 V; see Fig.2
C
BCV28 4000 −−
BCV48 2000 −−
collector-emitter saturation
IC= −100 mA; IB= −0.1 mA −−−1V
voltage
base-emitter saturation voltage IC= −100 mA; IB= −0.1 mA −−−1.5 V
base-emitter on-state voltage IC= −10 mA; IB= −5mA −−−1.4 V
transition frequency IC= −30 mA; VCE= −5V;
− 220 − MHz
f = 100 MHz
1999 Apr 08 3
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