Philips BCV26 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BCV26; BCV46
PNP Darlington transistors
Product specification
Supersedes data of 1997 Apr 23
1999 Apr 08
Philips Semiconductors Product specification
PNP Darlington transistors BCV26; BCV46
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 60 V)
• Very high DC current gain (min. 10000).
APPLICATIONS
• Where very high amplification is required.
DESCRIPTION
PNP Darlington transistor in a SOT23 plastic package.
NPN complements: BCV27 and BCV47.
MARKING
TYPE NUMBER MARKING CODE
(1)
BCV26 FD∗
BCV46 FE∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
2
Fig.1 Simplified outline (SOT23) and symbol.
13
TR1
TR2
2
MAM299
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BCV26 −−40 V
BCV46 −−80 V
V
CES
collector-emitter voltage VBE=0
BCV26 −−30 V
BCV46 −−60 V
V
I
I
I
P
T
T
T
EBO
C
CM
B
tot
stg
j
amb
emitter-base voltage open collector −−10 V
collector current (DC) −−500 mA
peak collector current −−800 mA
base current (DC) −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 08 2
Philips Semiconductors Product specification
PNP Darlington transistors BCV26; BCV46
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BEon
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current
BCV26 I
BCV46 I
= 0; VCB= −30 V −−−100 nA
E
= 0; VCB= −60 V −−−100 nA
E
emitter cut-off current IC= 0; VEB= −10 V −−−100 nA
DC current gain IC= −1 mA; VCE= −5 V; (see Fig.2)
BCV26 4000 −−
BCV46 2000 −−
DC current gain I
= −10 mA; VCE= −5 V; (see Fig.2)
C
BCV26 10000 −−
BCV46 4000 −−
DC current gain I
= −100 mA; VCE= −5 V; (see Fig.2)
C
BCV26 20000 −−
BCV46 10000 −−
collector-emitter saturation voltage IC= −100 mA; IB= −0.1 mA −−−1V
base-emitter saturation voltage IC= −100 mA; IB= −0.1 mA −−−1.5 V
base-emitter on-state voltage IC= −10 mA; VCE= −5V −−−1.4 V
transition frequency IC= −30 mA; VCE= −5 V; f = 100 MHz − 220 − MHz
1999 Apr 08 3
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