Philips bcp69 Datasheet

BCP69

20 V, 1 A PNP medium power transistor

Rev. 06 — 2 December 2008 Product data sheet

1. Product profile

1.1 General description

PNP medium power transistor in a Surface-Mounted Device (SMD) plastic package.

Table 1. Product overview

Type number

BCP69 SOT223 SC-73 medium power
BCP69-16
BCP69-16/DG
BCP69-16/IN
BCP69-25

[1] /DG: halogen-free

[1]

Package Package
NXP JEITA

configuration

1.2 Features

n High current
n Three current gain selections
n 1.4 W total power dissipation
n Medium power SMD plastic package

1.3 Applications

n Linear voltage regulators
n High-side switches
n Supply line switches
n MOSFET drivers
n Audio preamplifier

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V
I
I

CEO
C
CM

collector-emitter voltage open base - - −20 V
collector current - - −1A
peak collector current single pulse;

t

≤ 1ms

p

--−2A

NXP Semiconductors

BCP69

20 V, 1 A PNP medium power transistor

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

h

FE

DC current gain VCE= −1V;

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

1 base
2 collector
3 emitter
4 collector

…continued

I

= −500 mA

C

BCP69 85 - 375
BCP69-16

100 - 250

BCP69-16/DG
BCP69-16/IN 140 - 230
BCP69-25 160 - 375

4

132

2, 4

1

3

sym028

3. Ordering information

Table 4. Ordering information

Type number

BCP69 SC-73 plastic surface-mounted package with increased
BCP69-16
BCP69-16/DG
BCP69-16/IN
BCP69-25

[1] /DG: halogen-free

[1]

Package
Name Description Version

heatsink; 4 leads

SOT223

BCP69_6 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 06 — 2 December 2008 2 of 13

NXP Semiconductors

4. Marking

Table 5. Marking codes

Type number

BCP69 BCP69
BCP69-16 BCP69/16
BCP69-16/DG BCP69-16D
BCP69-16/IN 69-16N
BCP69-25 BCP69/25

[1] /DG: halogen-free

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

j

T

amb

T

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

BCP69

20 V, 1 A PNP medium power transistor

[1]

collector-base voltage open emitter - −32 V
collector-emitter voltage open base - −20 V
emitter-base voltage open collector - −5V
collector current - −1A
peak collector current single pulse;

peak base current single pulse;

total power dissipation T

junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

Marking code

t

≤ 1ms

p

t

≤ 1ms

p

≤ 25 °C

amb

- −2A

- −200 mA

[1]

- 0.625 W

[2]

-1W

[3]

- 1.4 W

BCP69_6 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 06 — 2 December 2008 3 of 13

NXP Semiconductors

BCP69

20 V, 1 A PNP medium power transistor

(1) FR4 PCB, mounting pad for collector 6cm
(2) FR4 PCB, mounting pad for collector 1cm
(3) FR4 PCB, standard footprint

Fig 1. Power derating curves

6. Thermal characteristics

1.6

P

tot

(W)

1.2

0.8

0.4

0

−65 −5

mle311

(1)

(2)

(3)

55 175

2
2

115

T

(°C)

amb

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

R

th(j-sp)

thermal resistance from junction
to ambient

thermal resistance from junction

in free air

[1]

- - 200 K/W

[2]

- - 125 K/W

[3]

--89K/W

--15K/W

to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

BCP69_6 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 06 — 2 December 2008 4 of 13

NXP Semiconductors

BCP69

20 V, 1 A PNP medium power transistor

2

10

R

th(j-a)

(K/W)

10

10

1

−1

−5

10

duty cycle = 1

0.5

0.2

0.05

0.01
0

0.75

0.33

0.1

0.02

−4

10

FR4 PCB, mounting pad for collector 6 cm

P

−3

10

−2

2

−1

10

1

1010

006aab402

t

1

δ =

t

2

t

1

t

2

10

t

2

3

10

tp (s)

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

BCP69_6 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 06 — 2 December 2008 5 of 13

NXP Semiconductors

7. Characteristics

Table 8. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

I

CBO

I

EBO

h

FE

V

CEsat

V

BE

C

c

f

T

=25°C unless otherwise specified.

collector-base cut-off
current

emitter-base cut-off

VCB= −25 V; IE=0A - - −100 nA
V

CB

T

= 150 °C

j

VEB= −5 V; IC=0A - - −100 nA

current
DC current gain

BCP69 V

BCP69-16
BCP69-16/DG

BCP69-16/IN V

BCP69-25 V

collector-emitter
saturation voltage

CE

I

= −5mA

C

V

CE

I

= −500 mA

C

V

CE

V

CE

I

= −500 mA

C

CE

I

= −500 mA

C

CE

I

= −500 mA

C

IC= −1A;
I

= −100 mA

B

base-emitter voltage VCE= −10 V;

I

= −5mA

C

V

CE

collector capacitance VCB= −10 V;

I

E=ie

f=1MHz

transition frequency VCE= −5V;

I

= −50 mA;

C

f = 100 MHz

BCP69

20 V, 1 A PNP medium power transistor

= −25 V; IE=0A;

= −10 V;

= −1V;

= −1 V; IC= −1A 60 - ­= −1V;

= −1V;

= −1V;

= −1 V; IC= −1A - - −1V

=0A;

--−10 µA

50 - -

85 - 375

100 - 250

140 - 230

160 - 375

--−500 mV

--−700 mV

-28-pF

40 140 - MHz

BCP69_6 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 06 — 2 December 2008 6 of 13

NXP Semiconductors

BCP69

20 V, 1 A PNP medium power transistor

3

10

h

FE

2

10

−10

−1

−1 −10 −10

2

mle305

−103−10
IC (mA)

4

VCE= −1V T

Fig 3. BCP69-16: DC current gain as a function of

collector current; typical values

−1000
V

BE

(mV)

−800

mle304

−14.4

−10.8

−7.2

−3.6

006aab403

−16.2

−12.6

−9.0

−5.4

−1.8

V

(V)

CE

(A)

I

C

−2.4

−2.0

−1.6

−1.2

−0.8

−0.4

IB (mA) = −18.0

0

0

−1 −5

=25°C

amb

−2 −3 −4

Fig 4. BCP69-16: Collector current as a function of

collector-emitter voltage; typical values

mle306

V

(mV)

−10

CEsat

3

−600

−400

−200

0

−10

−1

−1 −10

−10

−10

3

I

2

(mA)

C

−10

4

VCE= −1V IC/IB=10

Fig 5. BCP69-16: Base-emitter voltage as a function

of collector current; typical values

2

−10

−10

−1

−10

−1

−1 −10

−10

2

−10

3

I

C

(mA)

−10

4

Fig 6. BCP69-16: Collector-emittersaturationvoltage

as a function of collector current; typical
values

BCP69_6 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 06 — 2 December 2008 7 of 13

NXP Semiconductors

BCP69

20 V, 1 A PNP medium power transistor

3

10

h

FE

2

10

−10

−1

−1 −10 −10

2

mle309

−103−10
IC (mA)

4

VCE= −1V T

Fig 7. BCP69-25: DC current gain as a function of

collector current; typical values

−1000
V

BE

(mV)

−800

mle304

−9.6

−7.2

−4.8

−2.4

006aab404

−10.8

−8.4

−6.0

−3.6

−1.2

VCE (V)

I

(A)

C

−2.4

−2.0

−1.6

−1.2

−0.8

−0.4

IB (mA) = −12.0

0

0

−1 −5

=25°C

amb

−2 −3 −4

Fig 8. BCP69-25: Collector current as a function of

collector-emitter voltage; typical values

mle310

V

(mV)

−10

CEsat

3

−600

−400

−200

0

−10

−1

−1 −10

−10

−10

3

I

2

(mA)

C

−10

4

VCE= −1V IC/IB=10

Fig 9. BCP69-25: Base-emitter voltage as a function

of collector current; typical values

2

−10

−10

−1

−10

−1

−10−1

−10

2

−103−10
IC (mA)

4

Fig 10. BCP69-25: Collector-emitter saturation voltage

as a function of collector current; typical
values

BCP69_6 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 06 — 2 December 2008 8 of 13

NXP Semiconductors

8. Package outline

Fig 11. Package outline SOT223 (SC-73)

7.3

6.7

3.7

3.3

6.7

6.3

3.1

2.9

132

2.3

4.6

BCP69

20 V, 1 A PNP medium power transistor

1.8

1.5

4

1.1

0.7

0.8

0.6

0.32

0.22
04-11-10Dimensions in mm

9. Packing information

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number

BCP69 SOT223 8 mm pitch, 12 mm tape and reel -115 -135
BCP69-16
BCP69-16/DG
BCP69-16/IN
BCP69-25

[1] For further information and the availability of packing methods, seeSection 13.
[2] /DG: halogen-free

[1]

[2]

Package Description Packing quantity

1000 4000

BCP69_6 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 06 — 2 December 2008 9 of 13

NXP Semiconductors

10. Soldering

1.3

(4×)

1.2

(4×)

7

3.85

3.6

3.5

BCP69

20 V, 1 A PNP medium power transistor

0.3

4

6.1

3.9 7.65

231

Dimensions in mm

solder lands

solder resist

solder paste

occupied area

2.3 2.3

1.2

(3×)

1.3

(3×)

6.15

Fig 12. Reflow soldering footprint SOT223 (SC-73)

8.9

6.7

1.9

4

6.2

2

31

1.9

(3×)

8.7

sot223_fr

solder lands

solder resist

occupied area

Dimensions in mm

preferred transport

direction during soldering

2.7 2.7

1.1

1.9

(2×)

sot223_fw

Fig 13. Wave soldering footprint SOT223 (SC-73)

BCP69_6 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 06 — 2 December 2008 10 of 13

NXP Semiconductors

20 V, 1 A PNP medium power transistor

BCP69

11. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BCP69_6 20081202 Product data sheet - BCP69_5
Modifications:

BCP69_5 20031125 Product specification - BCP69_4
BCP69_4 20021115 Product specification - BCP69_3
BCP69_3 19990408 Product specification - BCP69_CNV_2

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Table 1 “Product overview”: enhanced

• Table 4 “Ordering information”: enhanced

• Figure 2, 4 and 8: updated

• Figure 11: superseded by minimized package outline drawing

• Section 9 “Packing information”: added

• Section 10 “Soldering”: enhanced

• Section 12 “Legal information”: updated

BCP69_6 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 06 — 2 December 2008 11 of 13

NXP Semiconductors

12. Legal information

12.1 Data sheet status

BCP69

20 V, 1 A PNP medium power transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described in this document mayhave changed since thisdocument was published and maydiffer in case of multiple devices.The latest productstatus

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shall have no liabilityfor the consequencesof
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product type number(s)and title. Ashort data sheet isintended
for quickreference only and shouldnot be relied upon to containdetailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not giveany representations or
warranties, expressed or implied, asto the accuracy or completenessof such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This documentsupersedes and replaces all informationsupplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatings System of IEC 60134)may cause permanent
damage tothe device. Limiting valuesare stress ratingsonly and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale,as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication ofany license under any copyrights,patents
or other industrial or intellectual property rights.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: Allreferenced brands,product names, service namesand trademarks
are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

BCP69_6 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 06 — 2 December 2008 12 of 13

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Contact information. . . . . . . . . . . . . . . . . . . . . 12

14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

BCP69

20 V, 1 A PNP medium power transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2008. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 2 December 2008

Document identifier: BCP69_6