Philips bcp68 Datasheet

DATA SH EET

book, halfpage

DISCRETE SEMICONDUCTORS

M3D087

BCP68

NPN medium power transistor;
20 V, 1 A

Product data sheet
Supersedes data of 1999 Apr 08

2003 Nov 25

NXP Semiconductors Product data sheet

NPN medium power transistor;
20 V, 1 A

FEATURES

• High current

• Two current gain selections

• 1.4 W total power dissipation.

APPLICATIONS

• Linear voltage regulators

• Low side switches

• Supply line switch for negative voltages

• MOSFET drivers

• Audio pre-amplifiers.

DESCRIPTION

NPN medium power transistor (see “Simplified outline,
symbol and pinning”) for package details.

BCP68

QUICK REFERENCE DATA

SYMBOL PARAMETER MIN. MAX. UNIT

V

I
I
h

CEO

C
CM

FE

collector-emitter

− 20 V

voltage
collector current (DC) − 1 A
peak collector current − 2 A
DC current gain

BCP68 85 375
BCP68-25 160 375

PRODUCT OVERVIEW

PACKAGE

T YPE NUMBER

MARKING CODE

PHILIPS EIAJ

BCP68 SOT223 SC-73 BCP68
BCP68-25 SOT223 SC-73 BCP68/25

SIMPLIFIED OUTLINE, SYMBOL AND PINNING

PINNING

T YPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL

PIN DESCRIPTION

BCP68 1 base

handbook, halfpage

4

2, 4

2 collector
3 emitter

123

Top view

1

3

MAM287

4 collector

RELATED PRODUCTS

TYPE NUMBER DESCRIPTION FEATURE

BCP69 PNP medium power transistor PNP complement
BC868 NPN medium power transistor SOT89, 20 V
BC368 NPN medium power transistor SOT54, 20 V

2003 Nov 25 2

NXP Semiconductors Product data sheet

NPN medium power transistor;

BCP68

20 V, 1 A

ORDERING INFORMATION

T YPE NUMBER

NAME DESCRIPTION VERSION

BCP68 − plastic surface mounted package; collector pad for good heat
BCP68-25

transfer; 4 leads

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
I
I
P

T
T
T

CBO
CEO

EBO
C
CM
BM

tot

stg

j

amb

collector-base voltage open emitter − 32 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 5 V
collector current (DC) − 1 A
peak collector current − 2 A
peak base current − 200 mA
total power dissipation T

≤ 25 °C; notes 1 and 2 − 0.625 W

amb

T

≤ 25 °C; notes 1 and 3 − 1 W

amb

T

≤ 25 °C; notes 1 and 4 − 1.4 W

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

PACKAGE

SOT223

Notes

1. See SOT223 (SC-73) standard mounting conditions.

2. Device mounted on a FR4 printed-circuit board; single- sid ed copper; tinplated; standard footprint for SOT223.

3. Device mounted on a FR4 printed-circuit board; single-sid ed copper; tinplated; 1 cm2 collector mounting pad.

4. Device mounted on a FR4 printed-circuit board; single-sid ed copper; tinplated; 6 cm2 collector mounting pad.

2003 Nov 25 3

NXP Semiconductors Product data sheet

NPN medium power transistor;
20 V, 1 A

T

MDB846

amb

1.6

handbook, halfpage

P

tot

(W)

1.2

0.8

0.4

0

−60 600 120 180

(1) 6 cm2 collector mounting pad.
(2) 1 cm2 collector mounting pad.
(3) Standar d PCB footprint.

(1)

(2)

(3)

BCP68

(°C)

Fig.1 Power derating curve.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

R

th(j-a)

th(j-s)

thermal resistance from junction to ambient T

thermal resistance from junction to solder point T

≤ 25 °C; notes 1 and 3 200 K/W

amb

T

≤ 25 °C; notes 1 and 4 125 K/W

amb

T

≤ 25 °C; notes 1 and 4 89 K/W

amb

≤ 25 °C 15 K/W

amb

Notes

1. See SOT223 (SC-73) standard mounting conditions.

2. Device mounted on a FR4 printed-circuit board; single- sid ed copper; tinplated; standard footprint for SOT223.

3. Device mounted on a FR4 printed-circuit board; single-sid ed copper; tinplated; 1 cm2 collector mounting pad.

4. Device mounted on a FR4 printed-circuit board; single-sid ed copper; tinplated; 6 cm2 collector mounting pad.

2003 Nov 25 4

NXP Semiconductors Product data sheet

6.15

NPN medium power transistor;
20 V, 1 A

handbook, full pagewidth

1.20
(4x)

7.40

7.00

3.85

3.60

3.50

BCP68

0.30
solder lands

solder resist

4

4.80

3.90

231

7.65

occupied area

solder paste

Dimensions in mm.

1.20 (3x)

1.30 (3x)

5.90

MSA443

Fig.2 Standard PCB footprint for mounting SOT223 (reflow soldering).

2003 Nov 25 5

NXP Semiconductors Product data sheet

NPN medium power transistor;
20 V, 1 A

handbook, halfpage

40 mm

0.5 mm

3.96 mm

32 mm
30 mm

20 mm

1.3 mm

2.6 mm

5 mm

1.6 mm

MDB845

BCP68

Dimensions in mm.

Fig.3 6 cm2 collector mounting pad.

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

collector-base cut-off curren t VCB = 25 V; IE = 0 − − 100 nA

VCB = 25 V; IE = 0; Tj = 150 °C − − 10 μA

I

EBO

h

FE

emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA
DC current gain BCP68

VCE = 10 V; IC = 5 mA 50 − −
VCE = 1 V; IC = 500 mA 85 − 375
VCE = 1 V; IC = 1 A 60 − −

BCP68-25

VCE = 1 V; IC = 500 mA 160 − 375
V
V

CEsat
BE

collector-emitter saturation voltage IC = 1 A; IB = 100 mA − − 500 mV
base-emitter voltage VCE = 10 V; IC = 5 mA − − 700 mV

VCE = 1 V; IC = 1 A − − 1 V

C

c

f

T

collector capacitance VCB = 10 V; IE = ie = 0; f = 1 MHz − 22 − pF
transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz 40 170 − MHz

2003 Nov 25 6

NXP Semiconductors Product data sheet

NPN medium power transistor;
20 V, 1 A

2.4

handbook, halfpage

I

C

(A)

2.0

1.6

1.2

0.8

0.4

0

01 2 45

(1)
(2)
(3)
(4)
(5)

(6)
(7)
(8)

(9)

(10)

3

MDB848

VCE (V)

1000

handbook, halfpage

V

BE

(mV)

800

600

400

200

0

−1

10

11010210

BCP68

MDB849

3

10

IC (mA)

4

= 25 °C.

T

amb

(1) IB = 10 mA.
(2) IB = 9 mA.
(3) IB = 8 mA.
(4) IB = 7 mA.
(5) IB = 6 mA.

(6) IB = 5 mA.
(7) IB = 4 mA.
(8) IB = 3 mA.
(9) IB = 2 mA.
(10)IB = 1 mA.

Fig.4 Collector current as a function of

collector-emitter voltage; typical values.

VBE/VCE = 1 V.

Fig.5 Base-emitter voltage as a function of

collector current; typical values.

2003 Nov 25 7

NXP Semiconductors Product data sheet

NPN medium power transistor;
20 V, 1 A

3

10

handbook, halfpage

h

FE

2

10

−1

10

11010210

MDB850

3

IC (mA)

BCP68

3

10

handbook, halfpage

V

CEsat
(mV)

2

10

10

4

10

1

−1

10

11010210

MDB851

3

IC (mA)

4

10

hFE/VCE = 1 V.

Fig.6 DC current gain as a function of collector

current; typical values.

IC/IB = 10.

Fig.7 Collector-emitter saturation voltage as a

function of collector current; typical values.

2003 Nov 25 8

NXP Semiconductors Product data sheet

NPN medium power transistor;
20 V, 1 A

2

10

(1)
(2)

R

th(j-a)

(K/W)

(3)
(4)

(5)

10

(6)
(7)

(8)
(9)

1

(10)

−1

10

−5

10

−4

10

−3

10

−2

BCP68

mdb847

t

P

t

p

T

−1

10

1

1010

2

10

δ

=

tp (s)

p

T

t

3

10

(1) δ = 1.0.
(2) δ = 0.75.

(3) δ = 0.5.
(4) δ = 0.33.

(5) δ = 0.2.
(6) δ = 0.1.

(7) δ = 0.05.
(8) δ = 0.02.

(9) δ = 0.01.
(10)δ = 0.0.

Fig.8 Transient thermal resistance from junction to ambient as a function of pulse time for 6 cm2 collector

mounting pad.

2003 Nov 25 9

NXP Semiconductors Product data sheet

P

3

NPN medium power transistor;

BCP68

20 V, 1 A

PACKAGE OUTLINE

lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22

y

D

c

b

1

4

E

H

E

AB

X

v M

A

132

e

1

DIMENSIONS (mm are the original dimensions)

UNIT A1b

A

0.10

1.8

mm

OUTLINE
VERSION

SOT223 SC-73

1.5

0.01

b

p

1

3.1

0.80

2.9

0.60

IEC JEDEC EIAJ

b

p

e

cD

0.32

6.7

0.22

6.3

0 2 4 mm

E

3.7

3.3

REFERENCES

w M

B

scale

e1HELpQywv

e

7.3

2.3

4.6

6.7

A

1.1

0.7

Q

A

1

L

p

detail X

0.95

0.85

0.1 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

2003 Nov 25 10

NXP Semiconductors Product data sheet

NPN medium power transistor;

BCP68

20 V, 1 A

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or comple ting a design.

2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

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any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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specified use without further testing or modificati on .

(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

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Export control ⎯ This document as well as the item(s)
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions

2003 Nov 25 11

60134) may cause permanent damage to

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were
made to the content, except for the legal definitions and disclaimers.

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Printed in The Netherlands R75/04 /pp12 Date of release: 2003 Nov 25 Document order number: 9397 750 12041