Philips bcm857bv_bs_ds Datasheet

BCM857BV; BCM857BS;
BCM857DS

PNP/PNP matched double transistors

Rev. 06 — 28 August 2009 Product data sheet

1. Product profile

1.1 General description

PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.

Table 1. Product overview

Type number Package NPN/NPN

BCM857BV SOT666 - BCM847BV BC857BV
BCM857BS SOT363 SC-88 BCM847BS BC857BS
BCM857DS SOT457 SC-74 BCM847DS -

NXP JEITA

Matched version of

complement

1.2 Features

n Current gain matching
n Base-emitter voltage matching
n Drop-in replacement for standard double transistors

1.3 Applications

n Current mirror
n Differential amplifier

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

V
I
h

CEO

C

FE

collector-emitter voltage open base - - −45 V
collector current - - −100 mA
DC current gain VCE= −5V;

I

= −2mA

C

200 290 450

NXP Semiconductors

BCM857BV/BS/DS

PNP/PNP matched double transistors

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per device

h

FE1/hFE2

V

BE1−VBE2VBE

[1] The smaller of the two values is taken as the numerator.
[2] The smaller of the two values is subtracted from the larger value.

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Symbol

1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1

…continued

hFEmatching VCE= −5V;

I

= −2mA

C

matching VCE= −5V;

I

= −2mA

C

[1]

0.9 1 -

[2]

--2mV

6

TR1

1

sym018

5

2

6 45

1 32

001aab555

4

TR2

3

3. Ordering information

Table 4. Ordering information

Type number Package

BCM857BV - plastic surface-mounted package; 6 leads SOT666
BCM857BS SC-88 plastic surface-mounted package; 6 leads SOT363
BCM857DS SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457

4. Marking

Table 5. Marking codes

Type number Marking code

BCM857BV 3B
BCM857BS A9*
BCM857DS R8

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

Name Description Version

[1]

BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 06 — 28 August 2009 2 of 15

NXP Semiconductors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

V

CBO

V

CEO

V

EBO

I

C

I

CM

P

tot

Per device

P

tot

T

j

T

amb

T

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reflow soldering is the only recommended soldering method.

BCM857BV/BS/DS

PNP/PNP matched double transistors

collector-base voltage open emitter - −50 V
collector-emitter voltage open base - −45 V
emitter-base voltage open collector - −5V
collector current - −100 mA
peak collector current single pulse;

t

≤ 1ms

p

total power dissipation T

amb

≤ 25 °C
SOT666
SOT363
SOT457

total power dissipation T

amb

≤ 25 °C
SOT666
SOT363
SOT457

junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

- −200 mA

[1][2]

- 200 mW

[1]

- 200 mW

[1]

- 250 mW

[1][2]

- 300 mW

[1]

- 300 mW

[1]

- 380 mW

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

R

th(j-a)

thermal resistance from
junction to ambient

SOT666
SOT363
SOT457

BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 06 — 28 August 2009 3 of 15

in free air

[1][2]

- - 625 K/W

[1]

- - 625 K/W

[1]

- - 500 K/W

NXP Semiconductors

BCM857BV/BS/DS

PNP/PNP matched double transistors

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per device

R

th(j-a)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.

7. Characteristics

Table 8. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

V

BE

C

c

C

e

…continued

thermal resistance from
junction to ambient

SOT666
SOT363
SOT457

=25°C unless otherwise specified

collector-base cut-off
current

VCB= −30 V;
I

V
I
T

emitter-base cut-off
current

VEB= −5V;
I

DC current gain VCE= −5V;

I
V

I

collector-emitter
saturation voltage

IC= −10 mA;
I

I
I

base-emitter
saturation voltage

IC= −10 mA;
I

I
I

base-emitter voltage VCE= −5V;

I
V

I

collector capacitance VCB= −10 V;

I
f=1MHz

emitter capacitance VEB= −0.5 V;

I
f=1MHz

in free air

=0A

E

= −30 V;

CB

=0A;

E

= 150 °C

j

=0A

C

= −10 µA

C

= −5V;

CE

= −2mA

C

= −0.5 mA

B

= −100 mA;

C

= −5mA

B

= −0.5 mA

B

= −100 mA;

C

= −5mA

B

= −2mA

C

= −5V;

CE

= −10 mA

C

=0A;

E=ie

=0A;

C=ic

[1][2]

- - 416 K/W

[1]

- - 416 K/W

[1]

- - 328 K/W

--−15 nA

--−5 µA

--−100 nA

- 250 -

200 290 450

- −50 −200 mV

- −200 −400 mV

[1]

- −760 - mV

[1]

- −920 - mV

[2]

−600 −650 −700 mV

[2]

--−760 mV

- - 2.2 pF

-10-pF

BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 06 — 28 August 2009 4 of 15

NXP Semiconductors

BCM857BV/BS/DS

PNP/PNP matched double transistors

Table 8. Characteristics

T

=25°C unless otherwise specified

amb

…continued

Symbol Parameter Conditions Min Typ Max Unit

f

T

transition frequency VCE= −5V;

I

= −10 mA;

C

100 175 - MHz

f = 100 MHz

NF noise figure V

= −5V;

CE

I

= −0.2 mA;

C

R

=2kΩ;

S

- 1.6 - dB

f = 10 Hz to

15.7 kHz
V

= −5V;

CE

I

= −0.2 mA;

C

R

=2kΩ;

S

- 3.1 - dB

f = 1 kHz;
B = 200 Hz

Per device

h

FE1/hFE2

V

BE1−VBE2

[1] V

BEsat

[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.

hFEmatching VCE= −5V;

I

= −2mA

C

VBEmatching VCE= −5V;

I

= −2mA

C

decreases by about 1.7 mV/K with increasing temperature.

[3]

0.9 1 -

[4]

--2mV

BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 06 — 28 August 2009 5 of 15

NXP Semiconductors

BCM857BV/BS/DS

PNP/PNP matched double transistors

−0.20
I

C

(A)

−0.16

−0.12

−0.08

−0.04

IB (mA) = −2.5

−2.25

−2.0

−1.75

−1.5

−1.25

−1.0

−0.75

−0.5

0

0 −10−8−4 −6−2

T

=25°CV

amb

006aaa540

−0.25

Fig 1. Collector current as a function of

collector-emitter voltage; typical values

VCE (V)

600

h

FE

400

200

(1) T
(2) T
(3) T

0

−10

−2

CE
amb
amb
amb

(1)

(2)

(3)

−1

−10

= −5V

= 100 °C
=25°C
= −55 °C

−10−1

006aaa541

2

−10
I

(mA)

C

−10

3

Fig 2. DC current gain as a function of collector

current; typical values

−10

006aaa542

2

IC (mA)

−10

3

V

−1.3

BEsat

(V)

−1.1

−0.9

−0.7

−0.5

−0.3

−0.1

−10

(1)

(2)

(3)

−1

−1 −10

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 100 °C

Fig 3. Base-emitter saturation voltage as a function

of collector current; typical values

−10

006aaa543

2

IC (mA)

−10

V

CEsat

−10

−10

(V)

−10

−1

−1

−2

−10

(1)
(2)
(3)

−1

−1 −10

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −55 °C

Fig 4. Collector-emitter saturation voltage as a

function of collector current; typical values

3

BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 06 — 28 August 2009 6 of 15

NXP Semiconductors

BCM857BV/BS/DS

PNP/PNP matched double transistors

−10

006aaa544

2

I

(mA)

C

−10

3

V

(V)

BE

−0.8

−0.6

−0.4

−1

−10

−1

−1 −10

VCE= −5 V; T

=25°CV

amb

Fig 5. Base-emitter voltage as a function of collector

current; typical values

006aaa546

C

(pF)

8

c

6

3

10

f

T

(MHz)

2

10

10

−1 −10

= −5 V; T

CE

amb

−10

=25°C

006aaa545

2

IC (mA)

Fig 6. Transition frequency as a function of collector

current; typical values

006aaa547

C

(pF)

15

e

13

4

2

0

0 −10−8−4 −6−2

f = 1MHz; T

=25°C f = 1 MHz; T

amb

VCB (V)

Fig 7. Collector capacitance as a function of

collector-base voltage; typical values

11

9

7

5

0 −6−4−2

amb

=25°C

VEB (V)

Fig 8. Emitter capacitance as a function of

emitter-base voltage; typical values

BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 06 — 28 August 2009 7 of 15

NXP Semiconductors

BCM857BV/BS/DS

PNP/PNP matched double transistors

8. Application information

V

CC

R1

l

out

TR2TR1

006aaa524

OUT1

Fig 9. Current mirror Fig 10. Differential amplifier

9. Package outline

V−

OUT2
IN2IN1 TR2TR1

V+

006aaa526

2.2

1.8

pin 1
index

132

0.65

1.3

0.45

465

0.15

0.3

0.2

1.7

1.3

1.5

1.1

Dimensions in mm

1.7

1.5

pin 1 index

123

0.5
1

0.6

0.5

456

0.3

0.27

0.17

0.1

0.18

0.08

04-11-08

2.2

2.0

1.35

1.15

Fig 11. Package outline SOT666 Fig 12. Package outline SOT363 (SC-88)

3.0

2.5

1.7

1.3

pin 1 index

3.1

2.7

56

4

0.6

0.2

1.1

0.9

1.1

0.8

0.25

0.10

06-03-16Dimensions in mm

132

0.95

1.9

0.40

0.25

0.26

0.10

04-11-08Dimensions in mm

Fig 13. Package outline SOT457 (SC-74)

BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 06 — 28 August 2009 8 of 15

NXP Semiconductors

10. Packing information

BCM857BV/BS/DS

PNP/PNP matched double transistors

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

BCM857BV SOT666 2 mm pitch, 8 mm tape and reel - - -315 -

4 mm pitch, 8 mm tape and reel - -115 - -

BCM857BS SOT363 4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

BCM857DS SOT457 4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

[1] For further information and the availability of packing methods, seeSection 14.
[2] T1: normal taping
[3] T2: reverse taping

[1]

3000 4000 8000 10000

[2]

-115 - - -135

[3]

-125 - - -165

[2]

-115 - - -135

[3]

-125 - - -165

BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 06 — 28 August 2009 9 of 15

NXP Semiconductors

11. Soldering

BCM857BV/BS/DS

PNP/PNP matched double transistors

2.75

2.45

2.1

1.6

0.538

1.075

1.72

0.55
(2×)

1.7

0.45
(4×)

0.5

(4×)

Reflow soldering is the only recommended soldering method.

Fig 14. Reflow soldering footprint SOT666

2.65

1.5

2.35

0.6

(4×)

0.5

(4×)

0.6

(2×)

0.65
(2×)

0.4 (2×)

0.4

(6×)

0.25
(2×)

0.325
(4×)

0.3

(2×)

0.375
(4×)

solder lands

placement area

solder paste

occupied area

Dimensions in mm

sot666_fr

solder lands

solder resist

solder paste

1.8

0.6

(2×)

occupied area

Dimensions in mm

sot363_fr

0.5

(4×)

0.6

(4×)

Fig 15. Reflow soldering footprint SOT363 (SC-88)

BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 06 — 28 August 2009 10 of 15

NXP Semiconductors

4.5

BCM857BV/BS/DS

PNP/PNP matched double transistors

1.5

solder lands

2.5

0.3
solder resist

1.5

1.3 1.3

2.45

5.3

Fig 16. Wave soldering footprint SOT363 (SC-88)

3.45

1.95

0.95

2.825

3.30

1.60

1.70

3.10

3.20

occupied area

Dimensions in mm

preferred transport

direction during soldering

sot363_fw

solder lands

solder resist

0.45 0.55

occupied area

solder paste

msc422

Dimensions in mm

Fig 17. Reflow soldering footprint SOT457 (SC-74)

BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 06 — 28 August 2009 11 of 15

NXP Semiconductors

5.05

5.30

BCM857BV/BS/DS

PNP/PNP matched double transistors

solder lands

0.45

1.45 4.45

solder resist
occupied area

1.40

4.30

Dimensions in mm

Fig 18. Wave soldering footprint SOT457 (SC-74)

msc423

BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 06 — 28 August 2009 12 of 15

NXP Semiconductors

BCM857BV/BS/DS

PNP/PNP matched double transistors

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BCM857BV_BS_DS_6 20090828 Product data sheet - BCM857BV_BS_DS_5
Modifications:

BCM857BV_BS_DS_5 20060627 Product data sheet - BCM857BS_DS_4
BCM857BS_DS_4 20060216 Product data sheet - BCM857BS_DS_3
BCM857BS_DS_3 20060130 Product data sheet - BCM857BS_2
BCM857BS_2 20050411 Product data sheet - BCM857BS_1
BCM857BS_1 20040914 Product data sheet - -

• This data sheet was changed to reflect the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical
content.

• Figure 12 “Package outline SOT363 (SC-88)”: updated

• Figure 14 “Reflow soldering footprint SOT666”: updated

• Figure 15 “Reflow soldering footprint SOT363 (SC-88)”: updated

• Figure 16 “Wave soldering footprint SOT363 (SC-88)”: updated

• Figure 18 “Wave soldering footprint SOT457 (SC-74)”: updated

BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 06 — 28 August 2009 13 of 15

NXP Semiconductors

13. Legal information

13.1 Data sheet status

BCM857BV/BS/DS

PNP/PNP matched double transistors

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document mayhave changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall haveno liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. Ashort data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or
warranties, expressedor implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referencedbrands, product names, service names and trademarks
are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 06 — 28 August 2009 14 of 15

NXP Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Application information. . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information. . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14 Contact information. . . . . . . . . . . . . . . . . . . . . 14

15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

BCM857BV/BS/DS

PNP/PNP matched double transistors

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Document identifier: BCM857BV_BS_DS_6

Date of release: 28 August 2009