Page 1
BCM856BS; BCM856BS/DG
BCM856DS; BCM856DS/DG
PNP/PNP matched double transistors
Rev. 01 — 7 August 2008 Product data sheet
1. Product profile
1.1 General description
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
Table 1. Product overview
Type number Package Package configuration
BCM856BS SOT363 SC-88 very small
BCM856BS/DG
BCM856DS SOT457 SC-74 small
BCM856DS/DG
NXP JEITA
1.2 Features
n Current gain matching
n Base-emitter voltage matching
n Drop-in replacement for standard double transistors
n AEC-Q101 qualified
1.3 Applications
n Current mirror
n Differential amplifier
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
I
h
CEO
C
FE
collector-emitter voltage open base - - −65 V
collector current - - −100 mA
DC current gain VCE= −5V;
I
= −2mA
C
200 290 450
Page 2
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per device
h
FE1/hFE2
V
BE1−VBE2VBE
[1] The smaller of the two values is taken as the numerator.
[2] The smaller of the two values is subtracted from the larger value.
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
…continued
hFEmatching VCE= −5V;
I
= −2mA
C
matching VCE= −5V;
I
= −2mA
C
[1]
0.9 1 -
[2]
--2mV
6
TR1
1
sym018
5
2
6 45
1 32
001aab555
4
TR2
3
3. Ordering information
Table 4. Ordering information
Type number Package
BCM856BS SC-88 plastic surface-mounted package; 6 leads SOT363
BCM856BS/DG
BCM856DS SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
BCM856DS/DG
Name Description Version
BCM856BS_BCM856DS_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 7 August 2008 2 of 14
Page 3
NXP Semiconductors
4. Marking
Table 5. Marking codes
Type number Marking code
BCM856BS *BS
BCM856BS/DG PB*
BCM856DS DS
BCM856DS/DG R9
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
Per device
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BCM856BS; BCM856DS
PNP/PNP matched double transistors
[1]
collector-base voltage open emitter - −80 V
collector-emitter voltage open base - −65 V
emitter-base voltage open collector - −5V
collector current - −100 mA
peak collector current single pulse;
t
≤ 1ms
p
total power dissipation T
amb
≤ 25 °C
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
total power dissipation T
amb
≤ 25 °C
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
junction temperature - 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C
- −200 mA
[1]
- 200 mW
[1]
- 250 mW
[1]
- 300 mW
[1]
- 380 mW
BCM856BS_BCM856DS_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 7 August 2008 3 of 14
Page 4
NXP Semiconductors
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
Per device
R
th(j-a)
thermal resistance from junction to
ambient
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
thermal resistance from junction to
ambient
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
BCM856BS; BCM856DS
PNP/PNP matched double transistors
in free air
[1]
- - 625 K/W
[1]
- - 500 K/W
in free air
[1]
- - 416 K/W
[1]
- - 328 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
=25°C unless otherwise specified.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain VCE= −5V;
collector-emitter
saturation voltage
base-emitter saturation
voltage
VCB= −30 V;
I
=0A
E
= −30 V;
V
CB
I
=0A;
E
T
= 150 °C
j
VEB= −5V;
I
=0A
C
I
= −10 µA
C
= −5V;
V
CE
I
= −2mA
C
IC= −10 mA;
I
= −0.5 mA
B
= −100 mA;
I
C
I
= −5mA
B
IC= −10 mA;
I
= −0.5 mA
B
= −100 mA;
I
C
I
= −5mA
B
--−15 nA
--−5 µA
--−100 nA
- 250 -
200 290 450
- −50 −200 mV
- −200 −400 mV
[1]
- −760 - mV
[1]
- −920 - mV
BCM856BS_BCM856DS_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 7 August 2008 4 of 14
Page 5
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
Table 8. Characteristics
T
=25°C unless otherwise specified.
amb
…continued
Symbol Parameter Conditions Min Typ Max Unit
V
BE
C
c
base-emitter voltage VCE= −5V;
I
= −2mA
C
= −5V;
V
CE
I
= −10 mA
C
collector capacitance VCB= −10 V;
I
=0A;
E=ie
[2]
−600 −650 −700 mV
[2]
--−760 mV
- - 2.2 pF
f=1MHz
C
e
emitter capacitance VEB= −0.5 V;
I
=0A;
C=ic
-10-pF
f=1MHz
f
T
transition frequency VCE= −5V;
I
= −10 mA;
C
100 175 - MHz
f = 100 MHz
NF noise figure V
= −5V;
CE
I
= −0.2 mA;
C
R
=2kΩ;
S
- 1.6 - dB
f = 10 Hz to
15.7 kHz
V
= −5V;
CE
I
= −0.2 mA;
C
R
=2kΩ;
S
- 3.1 - dB
f = 1 kHz;
B = 200 Hz
Per device
h
FE1/hFE2hFE
V
BE1−VBE2VBE
matching VCE= −5V;
I
= −2mA
C
matching VCE= −5V;
I
= −2mA
C
[3]
0.9 1 -
[4]
--2mV
[1] V
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
BCM856BS_BCM856DS_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 7 August 2008 5 of 14
decreases by about 1.7 mV/K with increasing temperature.
BEsat
Page 6
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
−0.20
I
C
(A)
−0.16
−0.12
−0.08
−0.04
IB (mA) = −2.5
−2.25
−2.0
−1.75
−1.5
−1.25
−1.0
−0.75
−0.5
0
0 −10−8−4 −6−2
T
=25°CV
amb
006aaa540
−0.25
Fig 1. Collector current as a function of
collector-emitter voltage; typical values
VCE (V)
600
h
FE
400
200
(1) T
(2) T
(3) T
0
−10
−2
CE
amb
amb
amb
(1)
(2)
(3)
−1
−10
= −5V
= 100 °C
=25°C
= −55 °C
−10−1
006aaa541
2
−10
I
(mA)
C
−10
3
Fig 2. DC current gain as a function of collector
current; typical values
−10
006aaa542
2
IC (mA)
−10
3
V
−1.3
BEsat
(V)
−1.1
−0.9
−0.7
−0.5
−0.3
−0.1
−10
(1)
(2)
(3)
−1
−1 −10
IC/IB=20
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C
=25°C
= 100 °C
Fig 3. Base-emitter saturation voltage as a function
of collector current; typical values
−10
006aaa543
2
IC (mA)
−10
V
−10
CEsat
(V)
−10
−10
−1
−1
−2
−10
(1)
(2)
(3)
−1
−1 −10
IC/IB=20
(1) T
(2) T
(3) T
amb
amb
amb
= 100 °C
=25°C
= −55 °C
Fig 4. Collector-emitter saturation voltage as a
function of collector current; typical values
3
BCM856BS_BCM856DS_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 7 August 2008 6 of 14
Page 7
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
−10
006aaa544
2
I
(mA)
C
−10
3
V
(V)
BE
−0.8
−0.6
−0.4
−1
−10
−1
−1 −10
VCE= −5 V; T
=25°CV
amb
Fig 5. Base-emitter voltage as a function of collector
current; typical values
006aaa546
C
(pF)
8
c
6
3
10
f
T
(MHz)
2
10
10
−1 −10
= −5 V; T
CE
amb
−10
=25°C
006aaa545
2
IC (mA)
Fig 6. Transition frequency as a function of collector
current; typical values
006aaa547
C
(pF)
15
e
13
4
2
0
0 −10−8−4 −6−2
f = 1 MHz; T
=25°C f = 1 MHz; T
amb
VCB (V)
Fig 7. Collector capacitance as a function of
collector-base voltage; typical values
11
9
7
5
0 −6−4−2
amb
=25°C
VEB (V)
Fig 8. Emitter capacitance as a function of
emitter-base voltage; typical values
BCM856BS_BCM856DS_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 7 August 2008 7 of 14
Page 8
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
8. Application information
V
CC
R1
l
out
TR2TR1
006aaa524
OUT1
Fig 9. Current mirror Fig 10. Differential amplifier
9. Test information
V−
OUT2
IN2IN1 TR2TR1
V+
006aaa526
9.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors
suitable for use in automotive applications.
10. Package outline
2.2
1.8
0.45
465
0.15
2.2
1.35
2.0
1.15
pin 1
index
132
0.65
1.3
0.3
0.2
Fig 11. Package outline SOT363 (SC-88) Fig 12. Package outline SOT457 (SC-74)
1.1
0.8
0.25
0.10
3.1
2.7
56
3.0
1.7
2.5
1.3
06-03-16Dimensions in mm
pin 1 index
132
0.95
1.9
4
0.40
0.25
, and is
0.6
0.2
1.1
0.9
0.26
0.10
04-11-08Dimensions in mm
BCM856BS_BCM856DS_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 7 August 2008 8 of 14
Page 9
NXP Semiconductors
11. Packing information
BCM856BS; BCM856DS
PNP/PNP matched double transistors
12. Soldering
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
[2]
BCM856BS SOT363 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
BCM856BS/DG SOT363 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
BCM856DS SOT457 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
BCM856DS/DG SOT457 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
[1] For further information and the availability of packing methods, seeSection 15.
[2] T1: normal taping
[3] T2: reverse taping
2.65
-115 -135
[3]
-125 -165
[2]
-115 -135
[3]
-125 -165
[2]
-115 -135
[3]
-125 -165
[2]
-115 -135
[3]
-125 -165
2.35
1.5
0.6
(4×)
0.5
(4×)
0.5
(4×)
0.6
(4×)
0.6
(2×)
1.8
0.4 (2×)
Fig 13. Reflow soldering footprint SOT363 (SC-88)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot363_fr
BCM856BS_BCM856DS_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 7 August 2008 9 of 14
Page 10
NXP Semiconductors
4.5
BCM856BS; BCM856DS
PNP/PNP matched double transistors
1.5
solder lands
2.5
0.3
solder resist
1.5
1.3 1.3
2.45
5.3
Fig 14. Wave soldering footprint SOT363 (SC-88)
3.45
1.95
0.95
2.8253.3
0.95
0.7
(6×)
0.8
(6×)
2.4
0.45
(6×)
0.55
(6×)
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot363_fw
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot457_fr
Fig 15. Reflow soldering footprint SOT457 (SC-74)
BCM856BS_BCM856DS_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 7 August 2008 10 of 14
Page 11
NXP Semiconductors
Fig 16. Wave soldering footprint SOT457 (SC-74)
5.05
1.475
1.475
1.45
(6×)
5.3
2.85
BCM856BS; BCM856DS
PNP/PNP matched double transistors
1.5
(4×)
0.45
(2×)
Dimensions in mm
direction during soldering
solder lands
solder resist
occupied area
preferred transport
sot457_fw
BCM856BS_BCM856DS_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 7 August 2008 11 of 14
Page 12
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
13. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BCM856BS_BCM856DS_1 20080807 Product data sheet - -
BCM856BS_BCM856DS_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 7 August 2008 12 of 14
Page 13
NXP Semiconductors
14. Legal information
14.1 Data sheet status
BCM856BS; BCM856DS
PNP/PNP matched double transistors
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document mayhave changedsince this document was published and may differ in case of multipledevices. The latest product status
information is available on the Internet at URL
[1][2]
Product status
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shall have noliability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the sameproduct type number(s) and title.A short data sheet is intended
for quickreference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
14.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However,NXP Semiconductors does not give any representations or
warranties, expressedor implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces allinformation supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
[3]
http://www.nxp.com.
Definition
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum RatingsSystem of IEC 60134) may cause permanent
damage to the device.Limiting values are stress ratingsonly and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at
http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
14.4 Trademarks
Notice: Allreferenced brands, productnames, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BCM856BS_BCM856DS_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 7 August 2008 13 of 14
Page 14
NXP Semiconductors
16. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Application information. . . . . . . . . . . . . . . . . . . 8
9 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
9.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8
10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Packing information. . . . . . . . . . . . . . . . . . . . . . 9
12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
15 Contact information. . . . . . . . . . . . . . . . . . . . . 13
16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
BCM856BS; BCM856DS
PNP/PNP matched double transistors
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Document identifier: BCM856BS_BCM856DS_1
Date of release: 7 August 2008
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