Philips bcm847bv_bs_ds Datasheet

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BCM847BV; BCM847BS; BCM847DS

NPN/NPN matched double transistors

Rev. 06 — 28 August 2009 Product data sheet

1. Product proﬁle

1.1 General description

NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally.

Table 1. Product overview

Type number Package PNP/PNP

BCM847BV SOT666 - BCM857BV BC847BV BCM847BS SOT363 SC-88 BCM857BS BC847BS BCM847DS SOT457 SC-74 BCM857DS -

NXP JEITA

Matched version of

complement

1.2 Features

n Current gain matching n Base-emitter voltage matching n Drop-in replacement for standard double transistors

1.3 Applications

n Current mirror n Differential ampliﬁer

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

V I h

CEO

collector-emitter voltage open base - - 45 V collector current - - 100 mA DC current gain VCE=5V;

=2mA

200 290 450

Page 2

NXP Semiconductors

BCM847BV/BS/DS

NPN/NPN matched double transistors

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per device

FE1/hFE2

BE1−VBE2VBE

[1] The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value.

2. Pinning information

Table 3. Pinning

Pin Description Simpliﬁed outline Symbol

1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1

…continued

hFEmatching VCE=5V;

=2mA

matching VCE=5V;

=2mA

[1]

0.9 1 -

[2]

--2mV

TR1

sym020

6 45

1 32

001aab555

TR2

3. Ordering information

Table 4. Ordering information

Type number Package

BCM847BV - plastic surface-mounted package; 6 leads SOT666 BCM847BS SC-88 plastic surface-mounted package; 6 leads SOT363 BCM847DS SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457

4. Marking

Table 5. Marking codes

Type number Marking code

BCM847BV 3A BCM847BS M1* BCM847DS R6

[1] * = -: made in Hong Kong

* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China

Name Description Version

[1]

Product data sheet Rev. 06 — 28 August 2009 2 of 15

Page 3

NXP Semiconductors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

CBO

CEO

EBO

tot

Per device

tot

amb

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reﬂow soldering is the only recommended soldering method.

BCM847BV/BS/DS

NPN/NPN matched double transistors

collector-base voltage open emitter - 50 V collector-emitter voltage open base - 45 V emitter-base voltage open collector - 6 V collector current - 100 mA peak collector current single pulse;

≤ 1ms

total power dissipation T

amb

≤ 25 °C SOT666 SOT363 SOT457

total power dissipation T

amb

≤ 25 °C SOT666 SOT363 SOT457

junction temperature - 150 °C ambient temperature −65 +150 °C storage temperature −65 +150 °C

- 200 mA

[1][2]

- 200 mW

[1]

- 200 mW

[1]

- 250 mW

[1][2]

- 300 mW

[1]

- 300 mW

[1]

- 380 mW

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

th(j-a)

thermal resistance from junction to ambient

SOT666 SOT363 SOT457

Product data sheet Rev. 06 — 28 August 2009 3 of 15

in free air

[1][2]

- - 625 K/W

[1]

- - 625 K/W

[1]

- - 500 K/W

Page 4

NXP Semiconductors

BCM847BV/BS/DS

NPN/NPN matched double transistors

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per device

th(j-a)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reﬂow soldering is the only recommended soldering method.

7. Characteristics

Table 8. Characteristics

amb

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

CBO

EBO

CEsat

BEsat

…continued

thermal resistance from junction to ambient

SOT666 SOT363 SOT457

=25°C unless otherwise speciﬁed

collector-base cut-off current

VCB=30V; I

V I

emitter-base cut-off current

VEB=5V; I

DC current gain VCE=5V;

V I

collector-emitter saturation voltage

base-emitter saturation voltage

IC=10mA; I

base-emitter voltage VCE=5V;

V I

collector capacitance VCB=10V;

E=ie

f = 1 MHz

emitter capacitance VEB= 0.5 V;

C=ic

f = 1 MHz

in free air

=0A

=30V;

=0A; = 150 °C

=0A

=10µA

=5V;

=2mA

= 0.5 mA = 100 mA;

=5mA

= 0.5 mA = 100 mA;

=5mA

=2mA

=5V;

=10mA

=0A;

[1][2]

- - 416 K/W

[1]

- - 416 K/W

[1]

- - 328 K/W

- - 15 nA

--5µA

- - 100 nA

- 250 -

200 290 450

- 50 200 mV

- 200 400 mV

[1]

- 760 - mV

[1]

- 910 - mV

[2]

610 660 710 mV

[2]

- - 770 mV

- - 1.5 pF

-11-pF

Product data sheet Rev. 06 — 28 August 2009 4 of 15

Page 5

NXP Semiconductors

BCM847BV/BS/DS

NPN/NPN matched double transistors

Table 8. Characteristics

=25°C unless otherwise speciﬁed

amb

…continued

Symbol Parameter Conditions Min Typ Max Unit

transition frequency VCE=5V;

=10mA;

100 250 - MHz

f = 100 MHz

NF noise ﬁgure V

=5V;

= 0.2 mA;

=2kΩ;

- 2.8 - dB

f = 10 Hz to

15.7 kHz V

=5V;

= 0.2 mA;

=2kΩ;

- 3.3 - dB

f = 1 kHz; B = 200 Hz

Per device

FE1/hFE2hFE

BE1−VBE2VBE

[1] V [2] VBE decreases by about 2 mV/K with increasing temperature. [3] The smaller of the two values is taken as the numerator. [4] The smaller of the two values is subtracted from the larger value.

decreases by about 1.7 mV/K with increasing temperature.

BEsat

matching VCE=5V;

=2mA

matching VCE=5V;

=2mA

[3]

0.9 1 -

[4]

--2mV

Product data sheet Rev. 06 — 28 August 2009 5 of 15

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NXP Semiconductors

BCM847BV/BS/DS

NPN/NPN matched double transistors

2.70

2.25

1.80

1.35

0.90

0.45

006aaa532

VCE (V)

(A)

0.20

0.16

0.12

0.08

0.04

IB (mA) = 4.50

4.05

3.60

3.15

0108462

=25°CV

amb

Fig 1. Collector current as a function of

collector-emitter voltage; typical values

600

400

200

(1) T (2) T (3) T

(1)

(2)

(3)

−2

CE amb amb amb

−1

=5V

= 100 °C =25°C = −55 °C

101

006aaa533

(mA)

Fig 2. DC current gain as a function of collector

current; typical values

006aaa534

IC (mA)

BEsat

(V)

1.3

1.1

0.9

0.7

0.5

0.3

0.1

(1)

(2)

(3)

−1

110

IC/IB=20 (1) T (2) T (3) T

amb amb amb

= −55 °C =25°C = 100 °C

Fig 3. Base-emitter saturation voltage as a function

of collector current; typical values

006aaa535

IC (mA)

CEsat

(V)

−1 (1)

(2) (3)

−2

−1

110

IC/IB=20 (1) T (2) T (3) T

amb amb amb

= 100 °C =25°C = −55 °C

Fig 4. Collector-emitter saturation voltage as a

function of collector current; typical values

Product data sheet Rev. 06 — 28 August 2009 6 of 15

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NXP Semiconductors

BCM847BV/BS/DS

NPN/NPN matched double transistors

006aaa536

(mA)

(V)

0.8

0.6

0.4 10

−1

VCE=5V; T

110

=25°CV

amb

Fig 5. Base-emitter voltage as a function of collector

current; typical values

006aaa538

(pF)

(MHz)

110

=5V; T

amb

=25°C

006aaa537

IC (mA)

Fig 6. Transition frequency as a function of collector

current; typical values

006aaa539

(pF)

0108462

f = 1MHz; T

=25°C f = 1 MHz; T

amb

VCB (V)

Fig 7. Collector capacitance as a function of

collector-base voltage; typical values

0642

amb

=25°C

VEB (V)

Fig 8. Emitter capacitance as a function of

emitter-base voltage; typical values

Product data sheet Rev. 06 — 28 August 2009 7 of 15

Page 8

NXP Semiconductors

BCM847BV/BS/DS

NPN/NPN matched double transistors

8. Application information

out

TR2TR1

006aaa523

OUT1

Fig 9. Current mirror Fig 10. Differential ampliﬁer

9. Package outline

V+

OUT2 IN2IN1 TR2TR1

V−

006aaa525

2.2

1.8

pin 1 index

132

0.65

1.3

0.45

465

0.15

0.3

0.2

1.7

1.3

1.5

1.1

Dimensions in mm

1.7

1.5

pin 1 index

123

0.5 1

0.6

0.5

456

0.3

0.27

0.17

0.1

0.18

0.08

04-11-08

2.2

2.0

1.35

1.15

Fig 11. Package outline SOT666 Fig 12. Package outline SOT363 (SC-88)

3.0

2.5

1.7

1.3

pin 1 index

3.1

2.7

0.6

0.2

1.1

0.9

1.1

0.8

0.25

0.10

06-03-16Dimensions in mm

132

0.95

1.9

0.40

0.25

0.26

0.10

04-11-08Dimensions in mm

Fig 13. Package outline SOT457 (SC-74)

Product data sheet Rev. 06 — 28 August 2009 8 of 15

Page 9

NXP Semiconductors

10. Packing information

BCM847BV/BS/DS

NPN/NPN matched double transistors

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

BCM847BV SOT666 2 mm pitch, 8 mm tape and reel - - -315 -

4 mm pitch, 8 mm tape and reel - -115 - -

BCM847BS SOT363 4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

BCM847DS SOT457 4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

[1] For further information and the availability of packing methods, seeSection 14. [2] T1: normal taping [3] T2: reverse taping

[1]

3000 4000 8000 10000

[2]

-115 - - -135

[3]

-125 - - -165

[2]

-115 - - -135

[3]

-125 - - -165

Product data sheet Rev. 06 — 28 August 2009 9 of 15

Page 10

NXP Semiconductors

11. Soldering

BCM847BV/BS/DS

NPN/NPN matched double transistors

2.75

2.45

2.1

1.6

0.538

1.075

1.72

0.55 (2×)

1.7

0.45 (4×)

0.5

(4×)

Reﬂow soldering is the only recommended soldering method.

Fig 14. Reﬂow soldering footprint SOT666

2.65

1.5

2.35

0.6

(4×)

0.5

(4×)

0.6

(2×)

0.65 (2×)

0.4 (2×)

0.4

(6×)

0.25 (2×)

0.325 (4×)

0.3

(2×)

0.375 (4×)

solder lands

placement area

solder paste

occupied area

Dimensions in mm

sot666_fr

solder lands

solder resist

solder paste

1.8

0.6

(2×)

occupied area

Dimensions in mm

sot363_fr

0.5

(4×)

0.6

(4×)

Fig 15. Reﬂow soldering footprint SOT363 (SC-88)

Product data sheet Rev. 06 — 28 August 2009 10 of 15

Page 11

NXP Semiconductors

4.5

BCM847BV/BS/DS

NPN/NPN matched double transistors

1.5

solder lands

2.5

0.3 solder resist

1.5

1.3 1.3

2.45

5.3

Fig 16. Wave soldering footprint SOT363 (SC-88)

3.45

1.95

0.95

2.825

3.30

1.60

1.70

3.10

3.20

occupied area

Dimensions in mm

preferred transport

direction during soldering

sot363_fw

solder lands

solder resist

0.45 0.55

occupied area

solder paste

msc422

Dimensions in mm

Fig 17. Reﬂow soldering footprint SOT457 (SC-74)

Product data sheet Rev. 06 — 28 August 2009 11 of 15

Page 12

NXP Semiconductors

5.05

5.30

BCM847BV/BS/DS

NPN/NPN matched double transistors

solder lands

0.45

1.45 4.45

solder resist occupied area

1.40

4.30

Dimensions in mm

Fig 18. Wave soldering footprint SOT457 (SC-74)

msc423

Product data sheet Rev. 06 — 28 August 2009 12 of 15

Page 13

NXP Semiconductors

BCM847BV/BS/DS

NPN/NPN matched double transistors

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BCM847BV_BS_DS_6 20090828 Product data sheet - BCM847BV_BS_DS_5 Modiﬁcations:

BCM847BV_BS_DS_5 20060627 Product data sheet - BCM847BS_DS_4 BCM847BS_DS_4 20060216 Product data sheet - BCM847BS_DS_3 BCM847BS_DS_3 20060123 Product data sheet - BCM847BS_2 BCM847BS_2 20050406 Product data sheet - BCM847BS_1 BCM847BS_1 20040914 Product data sheet - -

• This data sheet was changed to reﬂect the new company name NXP Semiconductors,

including new legal deﬁnitions and disclaimers. No changes were made to the technical content.

• Figure 12 “Package outline SOT363 (SC-88)”: updated

• Figure 14 “Reﬂow soldering footprint SOT666”: updated

• Figure 15 “Reﬂow soldering footprint SOT363 (SC-88)”: updated

• Figure 16 “Wave soldering footprint SOT363 (SC-88)”: updated

• Figure 18 “Wave soldering footprint SOT457 (SC-74)”: updated

Product data sheet Rev. 06 — 28 August 2009 13 of 15

Page 14

NXP Semiconductors

13. Legal information

13.1 Data sheet status

BCM847BV/BS/DS

NPN/NPN matched double transistors

Document status

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development. Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation. Product [short] data sheet Production This document contains the product speciﬁcation.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Deﬁnitions”. [3] The product status of device(s) described in this document mayhave changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

13.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modiﬁcations or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. Ashort data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or warranties, expressedor implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Deﬁnition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at

http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conﬂict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyanceor implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referencedbrands, product names, service names and trademarks are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com For sales ofﬁce addresses, please send an email to: [email protected]

Product data sheet Rev. 06 — 28 August 2009 14 of 15

Page 15

NXP Semiconductors

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Application information. . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information. . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

13.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14 Contact information. . . . . . . . . . . . . . . . . . . . . 14

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

BCM847BV/BS/DS

NPN/NPN matched double transistors

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Document identifier: BCM847BV_BS_DS_6

Date of release: 28 August 2009