Page 1
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D109
BC869
PNP medium power transistor;
20 V, 1 A
Product data sheet
Supersedes data of 2003 Dec 02
2004 Nov 08
Page 2
NXP Semiconductors Product data sheet
9
1
2
3
PNP medium power transistor;
20 V, 1 A
FEATURES
• High current
• Three current gain selections
• 1.2 W total power dissipation.
APPLICATIONS
• Linear voltage regulators
• High side switch
• Supply line switch
• MOSFET driver
• Audio (pre-) amplifier.
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS EIAJ
BC869 SOT89 SC-62 CEC
BC869-16 SOT89 SC-62 CGC
BC869-25 SOT89 SC-62 CHC
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. MAX. UNIT
V
CEO
collector-emitter
− −20 V
voltage
I
I
h
C
CM
FE
collector current (DC) − −1 A
peak collector current − −2 A
DC current gain
BC869 85 375 −
BC869-16 100 250 −
BC869-25 160 375 −
DESCRIPTION
PNP medium power transistor (see “Simplified outline,
symbol and pinning” for package details).
MARKING
BC869
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
T YPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL
PIN DESCRIPTION
BC869 1 emitter
2 collector
3 base
321
sym07
2004 Nov 08 2
Page 3
NXP Semiconductors Product data sheet
PNP medium power transistor;
BC869
20 V, 1 A
ORDERING INFORMATION
T YPE NUMBER
NAME DESCRIPTION VERSION
BC869 SC-62 plastic surface mounted pack ag e; collector pad for good heat
BC869-16
transfer; 3 leads
BC869-25
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
CBO
CEO
EBO
C
CM
BM
tot
collector-base voltage open emitter − −32 V
collector-emitter voltage open base − −20 V
emitter-base voltage open collector − −5 V
collector current (DC) − −1 A
peak collector current − −2 A
peak base current − −200 mA
total power dissipation T
amb
≤ 25 °C
notes 1 and 2 − 0.5 W
notes 1 and 3 − 0.85 W
notes 1 and 4 − 1.2 W
T
T
T
stg
j
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C
PACKAGE
SOT89
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
2004 Nov 08 3
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NXP Semiconductors Product data sheet
PNP medium power transistor;
20 V, 1 A
115
T
MLE323
amb
1.6
handbook, halfpage
P
tot
(W)
1.2
0.8
0.4
0
-65 -5
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) Standard footprint.
(1)
(2)
(3)
55
BC869
175
(°C)
Fig.1 Power derating curves.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient T
amb
≤ 25 °C
notes 1 and 2 250 K/W
notes 1 and 3 147 K/W
notes 1 and 4 104 K/W
R
th(j-s)
thermal resistance from junction to solder point T
≤ 25 °C 20 K/W
amb
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
2004 Nov 08 4
Page 5
NXP Semiconductors Product data sheet
m
2
PNP medium power transistor;
20 V, 1 A
3
10
handbook, full pagewidth
Z
th
(K/W)
(1)
2
(2)
10
(3)
(4)
(5)
(6)
10
(7)
(8)
(9)
(10)
1
−1
10
−5
10
−4
10
−3
10
BC869
MLE324
t
P
t
p
T
−2
10
−1
10
1
10 10
p
δ =
T
t
2
tp (s)
3
10
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
Fig.2 Transient thermal impedance as a function of pulse time; typical values.
2 mm
.8 mm
1.8 mm
1.1
mm
0.7 mm 0.8 mm
3.7 mm
3.5 m
MLE321
(7) δ = 0.05.
(8) δ = 0.02.
handbook, halfpage
(9) δ = 0.01.
(10)δ = 0.
40 mm
2.5 mm
0.5 mm
3.96 mm
32 mm
10 mm
10 mm
1 mm
5 mm
1.6 mm
MLE322
Fig.3 SOT89 standard mounting conditions for
reflow soldering.
Fig.4 Printed-circuit board for SOT89; mounting
2
pad for collector 1 cm
.
2004 Nov 08 5
Page 6
NXP Semiconductors Product data sheet
PNP medium power transistor;
BC869
20 V, 1 A
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
V
V
C
f
T
FE
CEsat
BE
c
collector-base cut-off curren t VCB = −25 V; IE = 0 A − − −100 nA
VCB = −25 V; IE = 0 A − − −10 μA
emitter-base cut-off current VEB = −5 V; IC = 0 A − − −100 nA
DC current gain BC869
VCE = −10 V; IC = −5 mA 50 − −
VCE = −1 V; IC = −500 mA 85 − 375
VCE = −1 V; IC = −1 A 60 − −
BC869−16
VCE = −1 V; IC = −500 mA 100 − 250
BC869−25
VCE = −1 V; IC = −500 mA 160 − 375
collector-emitter saturation voltage IC = −1 A; IB = −100 mA − − −500 mV
base-emitter voltage VCE = −10 V; IC = −5 mA − − −700 mV
VCE = −1 V; IC = −1 A − − −1 V
collector capacitance IE = ie = 0 A; VCB = −10 V;
= 1 MHz
f
transition frequency VCE = −5 V; IC = −50 mA;
= 100 MHz
f
− 28 − pF
40 140 − MHz
2004 Nov 08 6
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NXP Semiconductors Product data sheet
PNP medium power transistor;
20 V, 1 A
−2.4
handbook, halfpage
I
C
(A)
−2.0
−1.6
−1.2
−0.8
−0.4
0
0
BC869-16.
(1) I
= −18 mA.
B
(2) IB = −16.2 mA.
(3) IB = −14.4 mA.
(4) IB = −12.6 mA.
−1 −5−2 −3 −4
(5) IB = −10.8 mA.
(6) IB = −9.0 mA.
(7) IB = −7.2 mA.
(8) IB = −5.4 mA.
MLE317
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
VCE (V)
(9) IB = −3.6 mA.
(10)IB = −1.8 mA.
−1
handbook, halfpage
V
BE
(V)
−1
−10
−4
−10
BC869-16.
VCE = −1 V.
−10
BC869
MLE314
−3
−10
−2
−10
−1
−1
IC (A)
−10
Fig.5 Collector current as a function of
collector-emitter voltage; typical values.
3
10
handbook, halfpage
h
FE
2
10
−4
−10
BC869-16.
VCE = −1 V.
−10
−3
−10−2−10
−1
MLE319
−1 −10
IC (A)
Fig.6 Base-emitter voltage as a function of
collector current; typical values.
−1
handbook, halfpage
V
CEsat
(V)
−1
−10
−2
−10
−3
−10
−10
BC869-16.
IC/IB = 10.
−4
−10
−3
−10
−2
−10
−1
−1 −10
MLE320
IC (A)
Fig.7 DC current gain as a function of collector
current; typical values.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Nov 08 7
Page 8
NXP Semiconductors Product data sheet
PNP medium power transistor;
20 V, 1 A
−2.4
handbook, halfpage
I
C
(A)
−2.0
−1.6
−1.2
−0.8
−0.4
0
0
BC869-25.
(1) IB = −12 mA.
(2) IB = −10.8 mA.
(3) IB = −9.6 mA.
(4) IB = −8.4 mA.
−1 −5
−2 −3 −4
(5) IB = −7.2 mA.
(6) IB = −6.0 mA.
(7) IB = −4.8 mA.
(8) IB = −3.6 mA.
MLE313
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
VCE (V)
(9) IB = −2.4 mA.
(10)IB = −1.2 mA.
−1
handbook, halfpage
V
BE
(V)
−1
−10
−4
−10
BC869-25.
VCE = −1 V.
−10
BC869
MLE318
−3
−10
−2
−10
−1
−1 −10
IC (A)
Fig.9 Collector current as a function of
collector-emitter voltage; typical values.
3
10
handbook, halfpage
h
FE
2
10
−4
−10
BC869-25.
VCE = −1 V.
−10
−3
−10
−2
−10
−1
MLE315
−1 −10
IC (mA)
Fig.10 Base-emitter voltage as function of collector
current; typical values.
−1
handbook, halfpage
V
CEsat
(V)
−1
−10
−2
−10
−3
−10
−4
−10
BC869-25.
= 10.
I
C/IB
−10−3−10
−2
−10
−1
MLE316
−1 −10
IC (A)
Fig.11 DC curre nt gain as a function of collector
current; typical values.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Nov 08 8
Page 9
NXP Semiconductors Product data sheet
9
PNP medium power transistor;
BC869
20 V, 1 A
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
D
b
p3
B
A
123
w M
DIMENSIONS (mm are the original dimensions)
UNIT
mm
1.6
1.4
A
b
p1
0.48
0.35
b
p2
0.53
0.40
b
1.8
1.4
p3
c
0.44
0.23
E
L
b
p2
b
p1
e
1
e
0 2 4 mm
scale
D
E
e
e
1
4.6
2.6
3.0
4.4
2.4
1.5
p
H
4.25
3.75
H
E
c
L
1.2
0.8
w
p
0.13
E
OUTLINE
VERSION
SOT89 TO-243 SC-62
IEC JEDEC JEITA
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
2004 Nov 08 9
Page 10
NXP Semiconductors Product data sheet
PNP medium power transistor;
BC869
20 V, 1 A
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this docu ment may have changed since this document was publishe d
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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NXP Semiconductors makes no representation or
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(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2004 Nov 08 10
60134) may cause permanent damage to
Page 11
NXP Semiconductors
Customer notification
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definitions and disclaimers. No changes were made to the technical content, except for package outline
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Printed in The Netherlands R75/06/pp11 Date of release: 2004 Nov 08 Document order number: 9397 750 13861
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