Page 1
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D109
BC868
NPN medium power transistor;
20 V, 1 A
Product data sheet
Supersedes data of 2003 Dec 02
2004 Nov 08
Page 2
NXP Semiconductors Product data sheet
2
1
2
3
NPN medium power transistor;
20 V, 1 A
FEATURES
• High current
• Two current gain selections
• 1.2 W total power dissipation.
APPLICATIONS
• Linear voltage regulators
• Low side switch
• Supply line switch for negative voltages
• MOSFET driver
• Audio (pre-) amplifier.
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS EIAJ
BC868 SOT89 SC-62 CAC
BC868-25 SOT89 SC-62 CDC
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. MAX. UNIT
V
CEO
I
C
I
CM
h
FE
DESCRIPTION
NPN medium power transistor (see “Simplified outline,
symbol and pinning” for package details).
collector-emitter
voltage
collector current (DC) − 1 A
peak collector current − 2 A
DC current gain
BC868 85 375 −
BC868-25 160 375 −
− 20 V
MARKING CODE
BC868
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
T YPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL
BC868 1 emitter
321
ORDERING INFORMATION
T YPE NUMBER
BC868 SC-62 plastic surface mounted package; collector pad for good heat
BC868-25
NAME DESCRIPTION VERSION
transfer; 3 leads
sym04
PACKAGE
PINNING
PIN DESCRIPTION
2 collector
3 base
SOT89
2004 Nov 08 2
Page 3
NXP Semiconductors Product data sheet
NPN medium power transistor;
BC868
20 V, 1 A
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − 32 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 5 V
collector current (DC) − 1 A
peak collector current − 2 A
peak base current − 200 mA
total power dissipation T
amb
≤ 25 °C
notes 1 and 2 − 0.5 W
notes 1 and 3 − 0.85 W
notes 1 and 4 − 1.2 W
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
115
T
amb
MLE323
175
(°C)
1.6
handbook, halfpage
P
tot
(W)
1.2
0.8
0.4
0
-65 -5
(1)
(2)
(3)
55
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) Standard footprint.
Fig.1 Power derating curves.
2004 Nov 08 3
Page 4
NXP Semiconductors Product data sheet
NPN medium power transistor;
BC868
20 V, 1 A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
R
th(j-s)
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
handbook, full pagewidth
Z
(K/W)
thermal resistance from junction to ambient T
thermal resistance from junction to solder point T
3
10
th
≤ 25 °C
amb
notes 1 and 2 250 K/W
notes 1 and 3 147 K/W
notes 1 and 4 104 K/W
≤ 25 °C 20 K/W
amb
MLE324
(1)
2
(2)
10
(3)
(4)
(5)
(6)
10
(7)
(8)
(9)
(10)
1
−1
10
−5
10
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm
(1) δ = 1.
(2) δ = 0.75.
−4
10
(3) δ = 0.5.
(4) δ = 0.33.
10
−3
10
(5) δ = 0.2.
(6) δ = 0.1.
−2
Fig.2 Transient thermal impedance as a function of pulse time; typical values.
−1
10
2
.
(7) δ = 0.05.
(8) δ = 0.02.
1
(9) δ =0.01.
(10)δ = 0.
P
t
p
10 10
t
p
δ =
T
t
T
2
tp (s)
3
10
2004 Nov 08 4
Page 5
NXP Semiconductors Product data sheet
m
2
NPN medium power transistor;
20 V, 1 A
2 mm
.8 mm
1.8 mm
1.1
mm
0.7 mm 0.8 mm
3.7 mm
3.5 m
MLE321
handbook, halfpage
40 mm
2.5 mm
0.5 mm
3.96 mm
BC868
32 mm
10 mm
10 mm
1 mm
5 mm
1.6 mm
MLE322
Fig.3 SOT89 standard mounting conditions for
reflow soldering.
Fig.4 Printed-circuit board for SOT89; mounting
pad for collector 1 cm
2
.
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off curren t VCB = 25 V; IE = 0 A − − 100 nA
VCB = 25 V; IE = 0 A; Tj = 25 °C − − 10 μA
I
EBO
h
FE
emitter-base cut-off current VEB = 5 V; IC = 0 A − − 100 nA
DC current gain BC868
VCE = 10 V; IC = 5 mA 50 − −
VCE = 1 V; IC = 500 mA 85 − 375
VCE = 1 V; IC = 1 A 60 − −
h
FE
DC current gain BC868-25
VCE = 1 V; IC = 500 mA 160 − 375
V
V
CEsat
BE
collector-emitter saturation voltage IC = 1 A; IB = 100 mA − − 500 mV
base-emitter voltage VCE = 10 V; IC = 5 mA − − 700 mV
VCE = 1 V; IC = 1 A − − 1 V
C
c
f
T
collector capacitance IE = ie = 0 A; VCB = 10 V;
= 1 MHz
f
transition frequency VCE = 5 V; IC = 50 mA;
= 100 MHz
f
− 22 − pF
40 170 − MHz
2004 Nov 08 5
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NXP Semiconductors Product data sheet
NPN medium power transistor;
20 V, 1 A
2.4
handbook, halfpage
I
C
(A)
1.6
0.8
0
0
(1) IB = 10 mA.
(2) IB = 9 mA.
(3) IB = 8 mA.
(4) IB = 7 mA.
15
234
(5) IB = 6 mA.
(6) IB = 5 mA.
(9) IB = 2 mA.
(10) IB = 1 mA.
(7) IB = 4 mA.
(8) IB = 3 mA.
MLE331
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
VCE (V)
1
handbook, halfpage
V
BE
(V)
−1
10
−4
10
VCE = 1 V.
BC868
MLE332
−3
10
−2
10
−1
10
1
IC (A)
10
Fig.5 Collector current as a function of
collector-emitter voltage; typical values.
3
10
handbook, halfpage
h
FE
2
10
−4
10
−3
10
−2
10
−1
10
1
MLE333
IC (A)
Fig.6 Base-emitter voltage as function of collector
current; typical values.
MLE334
110
IC (A)
V
CEsat
1
handbook, halfpage
(V)
−1
10
−2
10
−3
10
−4
10
10
−3
10
−2
10
−1
10
VCE = 1 V.
Fig.7 DC current gain as a function of collector
current; typical values.
IC/IB = 10.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Nov 08 6
Page 7
NXP Semiconductors Product data sheet
9
NPN medium power transistor;
BC868
20 V, 1 A
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
D
b
p3
B
A
123
w M
DIMENSIONS (mm are the original dimensions)
UNIT
mm
1.6
1.4
A
b
p1
0.48
0.35
b
p2
0.53
0.40
b
1.8
1.4
p3
c
0.44
0.23
E
L
b
p2
b
p1
e
1
e
0 2 4 mm
scale
D
E
e
e
1
4.6
2.6
3.0
4.4
2.4
1.5
p
H
4.25
3.75
H
E
c
L
1.2
0.8
w
p
0.13
E
OUTLINE
VERSION
SOT89 TO-243 SC-62
IEC JEDEC JEITA
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
2004 Nov 08 7
Page 8
NXP Semiconductors Product data sheet
NPN medium power transistor;
BC868
20 V, 1 A
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this docu ment may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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of an NXP Semiconductors product can reasonably be
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2004 Nov 08 8
60134) may cause permanent damage to
Page 9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d t o b e a ccur ate a nd re li a ble and may be change d
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under patent- or other industri al or intellectual property rights.
Printed in The Netherlands R75/07/pp9 Date of release: 2004 Nov 08 Document order number: 9397 750 13859
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