Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
M3D883
BOTTOM VIEW
BC857M series
PNP general purpose transistors
Product data sheet
Supersedes data of 2003 Jul 15
2004 Mar 10
Page 2
NXP Semiconductors Product data sheet
PNP general purpose transistors BC857M series
FEATURES
• Leadless ultra small plastic package
mm × 0.6 mm × 0.5 mm)
(1
• Board space 1.3 × 0.9 mm
• Power dissipation comparable to SOT23.
APPLICATIONS
• General purpose small signal DC
• Low and medium frequency AC applications
• Mobile communications, digital (still) cameras, PDAs,
PCMCIA cards.
DESCRIPTION
PNP general purpose transistor in a SOT883 leadless ultra
small plastic package.
NPN complement: BC847M series.
MARKING
T YPE NUMBER MARKING CODE
BC857AM D1
BC857BM D2
BC857CM D3
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
I
I
CEO
C
CM
collector-emitter voltage −45 V
collector current (DC) −100 mA
peak collector current −200 mA
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
2
1
Bottom view
3
MAM469
3
1
2
Fig.1 Simplified outline (SOT883) and symbol.
ORDERING INFORMATION
PACKAGE
T YPE NUMBER
NAME DESCRIPTION VERSION
BC857AM − Leadless ultra small plastic package; 3 solder lands; bo dy
x 0.6 x 0.5 mm
BC857BM
1.0
BC857CM
SOT883
2004 Mar 10 2
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NXP Semiconductors Product data sheet
PNP general purpose transistors BC857M series
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − −50 V
collector-emitter voltage open base − −45 V
emitter-base voltage open collector − −5 V
collector current (DC) − −100 mA
peak collector current − −200 mA
peak base current − −100 mA
total power dissipation T
amb
≤ 25 °C
note 1 − 250 mW
note 2 − 430 mW
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
2. Device mounted on a FR4 printed-circuit board, sin gle- sid ed copper, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient in free air
note 1 500 K/W
note 2 290 K/W
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
2. Device mounted on a FR4 printed-circuit board, sin gle- sid ed copper, mounting pad for collector 1 cm2.
2004 Mar 10 3
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NXP Semiconductors Product data sheet
PNP general purpose transistors BC857M series
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
BE
V
CEsat
C
c
f
T
F noise figure IC = −200 μA; VCE = −5 V;
collector-base cut-off curren t VCB = −30 V; IE = 0 − −15 nA
VCB = −30 V; IE = 0; Tj = 150 °C − −5 μA
emitter-base cut-off current VEB = −5 V; IC = 0 − −100 nA
DC current gain VCE = −5 V; IC = −2 mA
BC857AM 125 250
BC857BM 220 475
BC857CM 420 800
base-emitter voltage IC = −2 mA; VCE = −5 V −600 −750 mV
IC = −10 mA; VCE = −5 V − −820 mV
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −200 mV
IC = −100 mA; IB = −5 mA; note 1 − −400 mV
collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 2.5 pF
transition frequency VCE = −5 V; IC = −10 mA;
= 100 MHz
f
100 − MHz
− 10 dB
R
= 2 kΩ; f = 1 kHz; B = 200 Hz
S
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Mar 10 4
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NXP Semiconductors Product data sheet
PNP general purpose transistors BC857M series
GRAPHICAL INFORMATION BC857AM
500
handbook, halfpage
h
FE
400
300
200
100
0
−2
−10
VCE = −5 V.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.2 DC current gain; typical values.
−10
MLE188
−1200
handbook, halfpage
V
BE
MLE189
(mV)
−1000
(1)
(1)
−800
(2)
(2)
(3)
−1
−1
−10 −10
2
IC (mA)
−10
3
−600
−400
−200
−10−2−10
(3)
−1
−1
−10 −10
2
IC (mA)
−10
3
VCE = −5 V.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
4
−10
handbook, halfpage
V
CEsat
MLE190
(mV)
3
−10
−10
−10
2
−10
(2)
−1
−1 −10
(1)
(3)
2
−10
IC (mA)
IC/IB = 20.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
= −55 °C.
(3) T
amb
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−1200
handbook, halfpage
V
BEsat
MLE191
(mV)
−1000
(1)
−800
−600
(2)
(3)
−400
3
−200
−1
−1−10
−10 −10
2
IC (mA)
−10
3
IC/IB = 20.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
= 150 °C.
(3) T
amb
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 10 5
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NXP Semiconductors Product data sheet
PNP general purpose transistors BC857M series
GRAPHICAL INFORMATION BC857BM
1000
handbook, halfpage
h
FE
800
600
400
200
0
−2
−10
VCE = −5 V.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.6 DC current gain; typical values.
−10
MLE192
−1200
handbook, halfpage
V
BE
MLE193
(mV)
−1000
(1)
−800
(1)
(2)
−600
(2)
(3)
−1
−1
−10 −10
2
IC (mA)
−10
3
−400
−200
−10−2−10
−1
(3)
−1
−10 −10
2
IC (mA)
−10
3
VCE = −5 V.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
4
−10
handbook, halfpage
V
CEsat
MLE194
(mV)
3
−10
−10
−10
2
−10
(2)
−1
−1 −10
(1)
(3)
2
−10
IC (mA)
IC/IB = 20.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
= −55 °C.
(3) T
amb
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−1200
handbook, halfpage
V
BEsat
MLE195
(mV)
−1000
(1)
−800
−600
(2)
(3)
−400
3
−200
−1
−1−10
−10 −10
2
IC (mA)
−10
3
IC/IB = 20.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
= 150 °C.
(3) T
amb
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 10 6
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NXP Semiconductors Product data sheet
PNP general purpose transistors BC857M series
GRAPHICAL INFORMATION BC857CM
1000
handbook, halfpage
h
FE
800
600
400
200
0
−2
−10
VCE = −5 V.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.10 DC current gain; typical values.
−10
MLE196
(1)
−1200
handbook, halfpage
V
BE
(mV)
MLE197
−1000
(1)
−800
(2)
(2)
−600
(3)
(3)
−400
−200
−1
−1
−10 −10
2
IC (mA)
−10
3
−1
−1−10
−10 −10
2
IC (mA)
−10
3
VCE = −5 V.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
4
−10
handbook, halfpage
V
CEsat
MLE198
(mV)
3
−10
−10
−10
2
−10
(2)
−1
−1 −10
(1)
(3)
2
−10
IC (mA)
IC/IB = 20.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
= −55 °C.
(3) T
amb
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−1200
handbook, halfpage
V
BEsat
MLE199
(mV)
−1000
(1)
−800
−600
(2)
(3)
−400
−200
3
−1
−1−10
−10 −10
2
IC (mA)
−10
3
IC/IB = 20.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
= 150 °C.
(3) T
amb
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 10 7
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NXP Semiconductors Product data sheet
L
3
PNP general purpose transistors BC857M series
PACKAGE OUTLINE
eadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT88
L
2
b
e
1
e
1
E
L
1
3
b
1
A
A
1
D
0 0.5 1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
UNIT
A
0.50
mm
0.46
Note
1. Including plating thickness
OUTLINE
VERSION
SOT883 SC-101
max.
0.03
1
bb
0.20
0.12
IEC JEDEC JEITA
1
0.55
0.47
DE
0.62
0.55
eLL
1.02
0.35 0.65
0.95
REFERENCES
e
1
0.30
0.22
0.30
0.22
1
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
2004 Mar 10 8
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NXP Semiconductors Product data sheet
PNP general purpose transistors BC857M series
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or comple ting a design.
2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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NXP Semiconductors makes no representation or
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(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2004 Mar 10 9
60134) may cause permanent damage to
Page 10
NXP Semiconductors
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Printed in The Netherlands R75/02/pp10 Date of release: 2004 Mar 10 Document order number: 9397 750 12839
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