Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
4
M3D74
BC857BV
PNP general purpose double
transistor
Product data sheet
Supersedes data of 2001 Aug 10
2001 Nov 07
Page 2
NXP Semiconductors Product data sheet
PNP general purpose double transistor BC857BV
FEATURES
• 300 mW total power dissipation
• Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin
package
• Excellent coplanarity due to straight leads
• Improved thermal behaviour due to flat leads
• Reduces number of components as repl acement of two
SC-75/SC-89 packaged BISS transistors
• Reduces required board space
• Reduces pick and place costs.
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP double transistor in a SOT666 plastic package.
complement: BC847BV.
NPN
MARKING
T YPE NUMBER MARKING CODE
BC857BV 3F
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
46
5
TR1
123
Top view
MAM450
Fig.1 Simplified outline (SOT666) and symbol.
645
TR2
132
2001 Nov 07 2
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NXP Semiconductors Product data sheet
PNP general purpose double transistor BC857BV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
collector-base voltage open emitter − −50 V
collector-emitter voltage open base − −45 V
emitter-base voltage open collector − −5 V
collector current (DC) − −100 mA
peak collector current − −200 mA
peak base current − −200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient notes 1 and 2 416 K/W
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Nov 07 3
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NXP Semiconductors Product data sheet
PNP general purpose double transistor BC857BV
CHARACTERISTICS
T
= 25 °C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
I
CBO
I
EBO
h
V
V
V
C
C
f
T
FE
BE
CEsat
BEsat
c
e
collector-base cut-off curren t IE = 0; VCB = −30 V − − −15 nA
IE = 0; VCB = −30 V; Tj = 150 °C − − −5 μA
emitter-base cut-off current IC = 0; VEB = −5 V − − −100 nA
DC current gain IC = −2 mA; VCE = −5 V 200 − 450
base-emitter voltage IC = −2 mA; VCE = −5 V −600 −655 −750 mV
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA − − −100 mV
IC = −100 mA; IB = −5. mA; note 1 − − −400 mV
base-emitter saturation vo ltage IC = −10 mA; IB = −0.5 mA − −755 − mV
collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − − 2.2 pF
emitter capacitance IC = ic = 0; VEB = −500 mV;
f
= 1 MHz
transition frequency IC = −10 mA; VCE = −5 V;
= 100 MHz
f
− 10 − pF
100 − − MHz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2001 Nov 07 4
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NXP Semiconductors Product data sheet
PNP general purpose double transistor BC857BV
Graphical information BC857BV
1000
handbook, halfpage
h
FE
800
600
400
200
0
−10−2−10
VCE = −5 V.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.2 DC current gain; typical values.
−1
110
MHB975
−1200
handbook, halfpage
V
BE
(mV)
MHB976
−1000
−800
(1)
(2)
(3)
2
10
3
10
IC (mA)
−600
−400
−200
−0
−10−2−10
(1)
(2)
(3)
−1
−1 −10
−10
2
IC (mA)
−10
3
VCE = −5 V.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
−10
MHB977
2
IC (mA)
4
−10
handbook, halfpage
V
CEsat
(mV)
3
−10
2
−10
−10
−1
−10
(1)
(2)
(3)
−1 −10
IC/IB = 20.
= 150 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−1200
handbook, halfpage
V
BEsat
(mV)
MHB978
−1000
−800
(1)
(2)
−600
(3)
−400
−200
3
0
−10
−1
−1 −10
−10
2
IC (mA)
−10
3
IC/IB 20.
= −55 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 07 5
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NXP Semiconductors Product data sheet
6
PNP general purpose double transistor BC857BV
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads SOT66
D
A
E
X
S
YS
pin 1 index
123
e
DIMENSIONS (mm are the original dimensions)
UNIT b
mm
A
0.6
0.5
0.27
0.17
p
cD
0.18
0.08
1
1.7
1.5
b
p
e
E
1.3
1.1
456
A
w M
A
0 1 2 mm
scale
e
H
L
1.0
e
1
E
1.7
0.5
1.5
0.3
0.1
p
w
0.1y0.1
H
E
detail X
c
L
p
OUTLINE
VERSION
SOT666
REFERENCES
IEC JEDEC EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
2001 Nov 07 6
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NXP Semiconductors Product data sheet
PNP general purpose double transistor BC857BV
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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does not give any representations or warranties,
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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of an NXP Semiconductors product can reasonably be
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
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may be interpreted or construed as an offer to sell products
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2001 Nov 07 7
60134) may cause permanent damage to
Page 8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were
made to the content, except for the legal definitions and disclaimers.
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For additional information please visit: http://www.nxp.com
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed
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under patent- or other industri al or intellectual property right s.
Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Nov 07 Document order number: 9397 750 09041
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