Page 1
DATA SH EET
handbook, halfpage
DISCRETE SEMICONDUCTORS
MBD128
BC857BS
PNP general purpose double
transistor
Product data sheet
Supersedes data of 1997 Jul 09
1999 Apr 26
Page 2
NXP Semiconductors Product data sheet
Top view
645
PNP general purpose double transistor BC857BS
FEATURES
• Low collector capacitance
• Low collector-emitter saturation voltage
• Closely matched current gain
• Reduces number of components and boardspace
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
• No mutual interference between the transistors.
APPLICATIONS
• General purpose switching and amplification.
handbook, halfpage
DESCRIPTION
PNP double transistor in an SC-88; SOT363 plastic
package. NPN
complement: BC847BS.
MARKING
T YPE NUMBER MARKING CODE
Fig.1 Simplified outline (SC-88; SOT363)
BC857BS 3Ft
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 134).
56
4
132
and symbol.
MAM339
TR1
TR2
132
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − −50 V
collector-emitter voltage open base − −45 V
emitter-base voltage open collector − −5 V
collector current (DC) − −100 mA
peak collector current − −200 mA
peak base current − −200 mA
total power dissipation T
≤ 25 °C − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW
Note
1. Device mounted on an FR4 printed-circuit board.
1999 Apr 26 2
Page 3
NXP Semiconductors Product data sheet
PNP general purpose double transistor BC857BS
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per device
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
thermal resistance from junction to ambient note 1 416 K/W
collector cut-off current IE = 0; VCB = −30 V − − −15 nA
IE = 0; VCB = −30 V; Tj = 150 °C − − −5 μA
emitter cut-off current IC = 0; VEB = −5 V − − −100 nA
DC current gain IC = −2 mA; VCE = −5 V 200 − 450
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA − − −100 mV
IC = −100 mA; IB = −5 mA; note 1 − − −400 mV
base-emitter saturation vo ltage IC = −10 mA; IB = −0.5 mA − −755 − mV
base-emitter voltage IC = 2 mA; VCE = −5 V −600 −655 −750 mV
collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − − 2.2 pF
emitter capacitance IC = ic = 0; VEB = −500 mV; f = 1 MHz − 10 − pF
transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − − MHz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
1999 Apr 26 3
Page 4
NXP Semiconductors Product data sheet
PNP general purpose double transistor BC857BS
400
handbook, full pagewidth
h
FE
300
200
100
0
−2
−10
−10
MBH727
VCE = −5 V
−1
−1
−10 −10
−10
2
IC (mA)
3
Fig.2 DC current gain; typical values
1999 Apr 26 4
Page 5
NXP Semiconductors Product data sheet
Plastic surface mounted package; 6 leads SOT363
PNP general purpose double transistor BC857BS
PACKAGE OUTLINE
pin 1
index
D
56
4
A
A
1
y
E
H
E
AB
Q
132
e
b
1
p
e
wB
M
detail X
L
p
X
v
c
M
A
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max
0.1
1
b
cD
p
0.30
0.25
0.20
0.10
IEC JEDEC EIAJ
2.2
1.8
E
1.35
1.15
REFERENCES
1.3
e
H
L
e
0.65
E
1
2.2
0.45
2.0
0.15
Qywv
p
0.25
0.15
0.2 0.10.2
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
UNIT
A
1.1
mm
0.8
OUTLINE
VERSION
SOT363 SC-88
1999 Apr 26 5
Page 6
NXP Semiconductors Product data sheet
PNP general purpose double transistor BC857BS
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, authorized or warranted to be su itable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
1999 Apr 26 6
60134) may cause permanent damage to
Page 7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed
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under patent- or other industri al or intellectual property righ ts.
Printed in The Netherlands 115002/00/02/pp7 Date of release: 1999 Apr 26 Document order number: 9397 750 05804
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