Philips bc856s Datasheet

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

Rev. 02 — 19 February 2009 Product data sheet

1. Product profile

1.1 General description

PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.

1.2 Features

n Low collector capacitance
n Low collector-emitter saturation voltage
n Closely matched current gain
n Reduces number of components and board space
n No mutual interference between the transistors

1.3 Applications

n General-purpose switching and amplification

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

V
I
h

CEO

C

FE

collector-emitter voltage open base - - −65 V
collector current - - −100 mA
DC current gain VCE= −5V;

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1

I

= −2mA

C

110 - -

56

4

132

TR1

6

1

sym018

5

4

TR2

2

3

NXP Semiconductors

3. Ordering information

Table 3. Ordering information

Type number Package

BC856S SC-88 plastic surface-mounted package; 6 leads SOT363

4. Marking

Table 4. Marking codes

Type number Marking code

BC856S 5F*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

Name Description Version

[1]

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

V

CBO

V

CEO

V

EBO

I

C

P

tot

Per device

P

tot

T

j

T

amb

T

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.

collector-base voltage open emitter - −80 V
collector-emitter voltage open base - −65 V
emitter-base voltage open collector - −5V
collector current - −100 mA
total power dissipation T

total power dissipation T

amb

amb

≤ 25 °C

≤ 25 °C

[1]

- 220 mW

[2]

- 250 mW

[1]

- 300 mW

[2]

- 400 mW
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

BC856S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 19 February 2009 2 of 12

NXP Semiconductors

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

(1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint

Fig 1. Per device: Power derating curves SOT363 (SC-88)

6. Thermal characteristics

500

P

tot

(mW)

400

300

200

100

0

−75 17512525 75−25

006aab419

(1)

(2)

T

(°C)

amb

2

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

R

th(j-a)

R

th(j-sp)

thermal resistance from
junction to ambient

thermal resistance from

in free air

[1]

- - 568 K/W

[2]

- - 500 K/W

- - 230 K/W

junction to solder point

Per device

R

th(j-a)

thermal resistance from

in free air

junction to ambient

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.

[1]

- - 416 K/W

[2]

- - 313 K/W

BC856S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 19 February 2009 3 of 12

NXP Semiconductors

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

006aab420

2

10

tp (s)

3

10

Z

th(j-a)

(K/W)

3

10

δ = 1

0.75

0.50

0.20

0.05

0.01
0

0.33

0.10

0.02

−4

10

−3

10

−2

−1

10

1

1010

2

10

10

1

−5

10

FR4 PCB, standard footprint

Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

006aab421

Z

th(j-a)

(K/W)

3

10

δ = 1

0.75

0.50

2

10

10

0.33

0.20

0.10

0.05

0.02

0.01
0

1

−5

10

−4

10

−3

10

FR4 PCB, mounting pad for collector 1 cm

−2

2

−1

10

1

1010

2

10

tp (s)

3

10

Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

BC856S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 19 February 2009 4 of 12

NXP Semiconductors

7. Characteristics

Table 7. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

V

BE

C

c

f

T

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

=25°C unless otherwise specified.

collector-basecut-off
current

emitter-base cut-off
current

DC current gain VCE= −5 V; IC= −2 mA 110 - ­collector-emitter

saturation voltage

base-emitter
saturation voltage

base-emitter voltage IC= −2 mA; VCE= −5V −600 −650 −750 mV

collector capacitance IE=ie=0A;VCB= −10 V;

transition frequency IC= −10 mA; VCE= −5V;

VCB= −30 V; IE=0A - - −15 nA

= −30 V; IE=0A;

V

CB

T

= 150 °C

j

--−5 µA

VEB= −5 V; IC=0A - - −100 nA

IC= −10 mA;
I

= −0.5 mA

B

= −100 mA; IB= −5mA

I

C

IC= −10 mA;
I

= −0.5 mA

B

= −10 mA; VCE= −5V - - −820 mV

I

C

--−100 mV

[1]

--−300 mV

- 700 - mV

- - 2.5 pF

f=1MHz

100 - - MHz

f = 100 MHz

[1] Pulse test: tp≤ 300 µs; δ≤0.02.

BC856S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 19 February 2009 5 of 12

NXP Semiconductors

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

−10

006aab429

2

I

(mA)

C

−10

3

500

h

FE

400

(1)

300

200

100

0

−10

−1

(2)

(3)

−1 −10

VCE= −5V
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −55 °C

Fig 4. Per transistor: DC current gain as a function of

collector current; typical values

−4.0

−3.0

−2.0

−1.0

006aab430

−4.5

−3.5

−2.5

−1.5

−0.5

VCE (V)

−0.20
I

C

(A)

−0.15

−0.10

−0.05

0

0 −5−4−2 −3−1

T

amb

IB (mA) = −5.0

=25°C

Fig 5. Per transistor: Collector current as a function

of collector-emitter voltage; typical values

−10

006aab431

2

I

(mA)

C

−10

V

(V)

−1.2

BE

−1.0

−0.8

−0.6

−0.4

−0.2

−10

(1)

(2)

(3)

−1

−1 −10

VCE= −5V
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 150 °C

Fig 6. Per transistor: Base-emitter voltage as a

function of collector current; typical values

−10

006aab432

2

I

(mA)

C

−10

3

−1.2

V

BEsat

(V)

−1.0

(1)

−0.8

−0.6

−0.4

3

−0.2

−10

−1

(2)

(3)

−1 −10

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 150 °C

Fig 7. Per transistor: Base-emitter saturation voltage

as a function of collector current; typical

values

BC856S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 19 February 2009 6 of 12

NXP Semiconductors

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

−10

006aab433

2

IC (mA)

−10

3

V

CEsat

(V)

−10

−10

−1

−1

−2

−10

(1)

(2)

(3)

−1

−1 −10

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −55 °C

Fig 8. Per transistor: Collector-emitter saturation

voltage as a function of collector current;

typical values

9

10

f

T

(Hz)

8

10

7

10

−1

−10

VCE= −5 V; f = 1 MHz; T

amb

=25°C

006aab434

−10−1
IC (mA)

−10

Fig 9. Per transistor: Transition frequency as a

function of collector current; typical values

2

BC856S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 19 February 2009 7 of 12

NXP Semiconductors

8. Package outline

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

Fig 10. Package outline SOT363 (SC-88)

9. Packing information

Table 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

BC856S SOT363 4 mm pitch, 8 mm tape and reel; T1

2.2

1.8

2.2

1.35

2.0

1.15

pin 1
index

132

0.65

1.3

4 mm pitch, 8 mm tape and reel; T2

1.1

0.8

0.45

465

0.15

0.3

0.2

0.25

0.10

06-03-16Dimensions in mm

[1]

3000 10000

[2]

-115 -135

[3]

-125 -165

[1] For further information and the availability of packing methods, seeSection 13.
[2] T1: normal taping
[3] T2: reverse taping

BC856S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 19 February 2009 8 of 12

NXP Semiconductors

10. Soldering

2.35

1.5

0.6

(4×)

0.5

(4×)

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

2.65

solder lands

0.4 (2×)
solder resist

solder paste

0.5

(4×)

0.6

(4×)

0.6

(2×)

1.8

Fig 11. Reflow soldering footprint SOT363 (SC-88)

1.5

4.5

1.5

1.3 1.3

2.45

5.3

Fig 12. Wave soldering footprint SOT363 (SC-88)

0.3

occupied area

Dimensions in mm

sot363_fr

solder lands

2.5
solder resist

occupied area

Dimensions in mm

preferred transport

direction during soldering

sot363_fw

BC856S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 19 February 2009 9 of 12

NXP Semiconductors

65 V, 100 mA PNP/PNP general-purpose transistor

BC856S

11. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BC856S_2 20090219 Product data sheet - BC856S_1
Modifications:

BC856S_1 19990824 Product specification - -

• The format of this data sheet has been redesigned to comply with the new identity guidelines

of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Section 1.2 “Features”: adapted

• Section 4 “Marking”: updated

• Section 7 “Characteristics”: enhanced

• Section 9 “Packing information”: added

• Section 10 “Soldering”: added

• Section 12 “Legal information”: updated

BC856S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 19 February 2009 10 of 12

NXP Semiconductors

12. Legal information

12.1 Data sheet status

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product statusof device(s) described in this document mayhave changedsince this document was published and may differ incase of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included hereinand shall have no liabilityfor the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the sameproduct type number(s) and title.A short datasheetis intended
for quickreference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not give any representations or
warranties, expressedor implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System ofIEC 60134) may cause permanent
damage to the device.Limiting values are stress ratings onlyand operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: Allreferenced brands, product names,service names and trademarks
are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

BC856S_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 19 February 2009 11 of 12

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 8

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Contact information. . . . . . . . . . . . . . . . . . . . . 11

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 19 February 2009

Document identifier: BC856S_2