Page 1
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D102
BC849W; BC850W
NPN general purpose transistors
Product data sheet
Supersedes data of 1997 Jun 20
1999 Apr 12
Page 2
NXP Semiconductors Product data sheet
NPN general purpose transistors BC849W; BC850W
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
NPN transistor in a SOT323 plastic package.
complements: BC859W and BC860W.
PNP
MARKING
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
(1)
CODE
BC849BW 2B∗ BC850BW 2F∗
BC849CW 2C∗ BC850CW 2G∗
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
3
2
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC849W − 30 V
BC850W − 50 V
V
CEO
collector-emitter voltage open base
BC849W − 30 V
BC850W − 45 V
V
I
I
I
P
T
T
T
EBO
C
CM
BM
tot
stg
j
amb
emitter-base voltage open collector − 5 V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12 2
Page 3
NXP Semiconductors Product data sheet
NPN general purpose transistors BC849W; BC850W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
C
e
f
T
F noise figure IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE = 0; VCB = 30 V − − 15 nA
IE = 0; VCB = 30 V; Tj = 150 °C − − 5 μA
emitter cut-off current IC = 0; VEB = 5 V − − 100 nA
DC current gain IC = 2 mA; VCE = 5 V; see Figs 2 and 3
BC849BW; BC850BW 200 − 450
BC849CW; BC850CW 420 − 800
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA − − 250 mV
IC = 100 mA; IB = 5 mA; note 1 − − 600 mV
base-emitter voltage IC = 2 mA; VCE = 5 V 580 − 700 mV
IC = 10 mA; VCE = 5 V − − 770 mV
collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − − 3 pF
emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz − 11 − pF
transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz
− − 4 dB
= 10 Hz to 15.7 kHz
f
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
= 1 kHz; B = 200 Hz
f
− − 4 dB
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
1999 Apr 12 3
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NXP Semiconductors Product data sheet
NPN general purpose transistors BC849W; BC850W
300
handbook, full pagewidth
h
FE
200
100
0
−2
10
BC849BW; BC850BW.
MBH724
VCE = 5 V
−1
10
1
10 10
2
10
IC (mA)
3
Fig.2 DC current gain; typical values.
600
handbook, full pagewidth
h
FE
400
200
0
−2
10
BC849CW; BC850CW.
MBH725
VCE = 5 V
−1
10
1
10 10
2
10
IC (mA)
3
Fig.3 DC current gain; typical values.
1999 Apr 12 4
Page 5
NXP Semiconductors Product data sheet
3
NPN general purpose transistors BC849W; BC850W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT32
D
y
3
A
12
e
b
1
p
e
B
w
M
E
H
E
A
1
detail X
AB
Q
L
p
X
v
M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max
0.1
1
b
cD
p
0.4
0.25
0.10
2.2
1.8
0.3
IEC JEDEC EIAJ
E
1.35
1.15
REFERENCES
1.3
e
e1H
0.65
2.2
2.0
L
Qwv
p
E
0.45
0.15
0.23
0.13
0.20.2
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
UNIT
A
1.1
mm
0.8
OUTLINE
VERSION
SOT323 SC-70
1999 Apr 12 5
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NXP Semiconductors Product data sheet
NPN general purpose transistors BC849W; BC850W
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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General ⎯ Information in this document is believed to be
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does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
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Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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of an NXP Semiconductors product can reasonably be
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accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
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national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
1999 Apr 12 6
60134) may cause permanent damage to
Page 7
NXP Semiconductors
Customer notification
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made to the content, except for the legal definitions and disclaimers.
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
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under patent- or other industri al or intellectual property rights.
Printed in The Netherlands 115002/00/03/pp7 Date of release: 1999 Apr 12 Document order number: 9397 750 05587
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