Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
4
M3D74
BC847BVN
NPN/PNP general purpose
transistor
Product data sheet
Supersedes data of 2001 Aug 30
2001 Nov 07
Page 2
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistor BC847BVN
FEATURES
• 300 mW total power dissipation
• Very small 1.6 mm x 1.2 mm ultra thin package
• Excellent coplanarity due to straight leads
• Replaces two SC-75/SC-89 packaged transistors on
same PCB area
• Reduced required PCB area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Switch mode power supply complementary MOSFET
driver
• Complementary driver for audio amplifiers.
DESCRIPTION
NPN/PNP transistor pair in a SOT666 plastic package.
MARKING
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
Top view
5
46
123
MAM443
645
TR2
TR1
132
T YPE NUMBER MARKING CODE
Fig.1 Simplified outline (SOT666) and symbol.
BC847BVN 13
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 45 V
emitter-base voltage open collector − 5 V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
2001 Nov 07 2
Page 3
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistor BC847BVN
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
NPN transistor
V
BE
C
c
C
e
PNP transistor
V
BE
C
c
C
e
thermal resistance from junction to ambient notes 1 and 2 416 K/W
collector-base cut-off curren t VCB = 30 V; IE = 0 − − 15 nA
VCB = 30 V; IE = 0; Tj = 150 °C − − 5 μA
emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA
DC current gain VCE = 5 V; IC = 2 mA 200 − 450
collector-emitter saturation
voltage
collector-emitter saturation
IC = 10 mA; IB = 0.5 mA − − 100 mV
IC = 100 mA; IB = 5 mA; note 1 − − 300 mV
IC = 10 mA; IB = 0.5 mA − 755 − mV
voltage
transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz
base-emitter turn-on voltage VCE = 5 V; IC = 2 mA 580 655 700 mV
collector capacitance VCB = 10 V; IE = Ie = 0; f = 1MHz − − 1.5 pF
emitter capacitance VEB = 500 mV; IC = Ic = 0; f = 1MHz − 11 − pF
base-emitter turn-on voltage VCE = −5 V; IC = −2 mA 600 655 750 mV
collector capacitance VCB = −10 V; IC = Ic = 0; f = 1MHz − − 2.2 pF
emitter capacitance VEB = −500 mV; IE = Ie = 0; f = 1MHz − 10 − pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2001 Nov 07 3
Page 4
NXP Semiconductors Product data sheet
C
NPN/PNP general purpose transistor BC847BVN
600
handbook, halfpage
h
FE
(1)
MLD703
400
(2)
200
(3)
0
−1
10
110
2
10
I
(mA)
TR1 (NPN); VCE = 5 V.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.2 DC current gain as a function of collector
current: typical values.
1200
handbook, halfpage
V
BE
MLD704
mV
1000
(1)
800
(2)
600
(3)
400
200
3
10
−2
10
−1
10
1
10 10
2
IC (mA)
3
10
TR1 (NPN); VCE = 5 V.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
4
10
handbook, halfpage
V
CEsat
MLD705
(mV)
3
10
2
10
10
−1
10
(2)
110
(1)
(3)
2
10
IC (mA)
TR1 (NPN); IC/IB = 20.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
= −55 °C.
(3) T
amb
Fig.4 Collector-emitter saturation voltage as a
function of collector current: typical values.
1200
handbook, halfpage
V
BEsat
MLD706
(mV)
1000
800
(1)
(2)
(3)
600
400
3
10
200
−1
110
10 10
2
IC (mA)
3
10
TR1 (NPN); IC/IB = 20.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
= 150 °C.
(3) T
amb
Fig.5 Base-emitter saturation voltage as a
function of collector current.
2001 Nov 07 4
Page 5
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistor BC847BVN
1000
handbook, halfpage
h
FE
MLD699
800
600
(1)
400
(2)
200
0
−10
−2
−10
(3)
−1
−1
−10 −10
2
IC (mA)
TR2 (PNP); VCE = −5 V.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.6 DC current gain as a function of collector
current: typical values.
−10
−1200
handbook, halfpage
V
BE
MLD700
mV
−1000
−800
(1)
(2)
−600
−400
3
−200
−10−2−10
−1
(3)
−1
−10 −10
2
IC (mA)
−10
3
TR2 (PNP); VCE = −5 V.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
4
−10
handbook, halfpage
V
CEsat
MLD701
(mV)
3
−10
−10
−10
2
−10
(2)
−1
−1 −10
(1)
(3)
2
−10
IC (mA)
TR2 (PNP); IC/IB = 20.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
= −55 °C.
(3) T
amb
Fig.8 Collector-emitter saturation voltage as a
function of collector current: typical values.
−10
−1200
handbook, halfpage
V
BEsat
MLD702
(mV)
−1000
(1)
−800
−600
(2)
(3)
−400
3
−200
−1
−1−10
−10 −10
2
IC (mA)
−10
3
TR2 (PNP); IC/IB = 20.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
= 150 °C.
(3) T
amb
Fig.9 Base-emitter saturation voltage as a
function of collector current.
2001 Nov 07 5
Page 6
NXP Semiconductors Product data sheet
6
NPN/PNP general purpose transistor BC847BVN
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads SOT66
D
A
E
X
S
YS
pin 1 index
123
e
DIMENSIONS (mm are the original dimensions)
UNIT b
mm
A
0.6
0.5
0.27
0.17
p
cD
0.18
0.08
b
1
1.7
1.5
p
e
E
1.3
1.1
456
A
w M
A
0 1 2 mm
scale
e
H
L
1.0
e
1
E
1.7
0.5
1.5
0.3
0.1
p
w
0.1y0.1
H
E
detail X
c
L
p
OUTLINE
VERSION
SOT666
REFERENCES
IEC JEDEC EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
2001 Nov 07 6
Page 7
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistor BC847BVN
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be su itable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2001 Nov 07 7
60134) may cause permanent damage to
Page 8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industri al or intellectual property right s.
Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Nov 07 Doc ument order number: 9397 750 09039
Loading...