Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
4
M3D74
BC847BV
NPN general purpose double
transistor
Product data sheet 2001 Sep 10
Page 2
NXP Semiconductors Product data sheet
NPN general purpose double transistor BC847BV
FEATURES
• 300 mW total power dissipation
• Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin
package
• Excellent coplanarity due to straight leads
• Low collector capacitance
• Improved thermal behaviour due to flat leads
• Reduces number of components as repl acement of two
SC-75/SC-89 packaged BISS transistors
• Reduces required board space
• Reduces pick and place costs.
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN double transistor in a SOT666 plastic package.
PNP
complement: BC857BV.
MARKING
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
Top view
5
46
123
MAM447
645
TR2
TR1
132
T YPE NUMBER MARKING CODE
BC847BV 1F
Fig.1 Simplified outline (SOT666) and symbol.
2001 Sep 10 2
Page 3
NXP Semiconductors Product data sheet
NPN general purpose double transistor BC847BV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 45 V
emitter-base voltage open collector − 5 V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient notes 1 and 2 416 K/W
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Sep 10 3
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NXP Semiconductors Product data sheet
NPN general purpose double transistor BC847BV
CHARACTERISTICS
T
= 25 °C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
I
CBO
I
EBO
h
V
V
V
C
C
f
T
FE
BE
CEsat
BEsat
c
e
collector-base cut-off current IE = 0; VCB = 30 V − − 15 nA
IE = 0; VCB = 30 V; Tj = 150 °C − − 5 μA
emitter-base cut-off current IC = 0; VEB = 5 V − − 100 nA
DC current gain IC = 2 mA; VCE = 5 V 200 − 450
base-emitter voltage IC = 2 mA; VCE = 5 V 580 655 700 mV
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA − − 100 mV
IC = 100 mA; IB = 5 mA; note 1 − − 300 mV
base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 755 − mV
collector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz − − 1.5 pF
emitter capacitance IC = ic = 0; VEB = 500 mV;f = 1 MHz − 11 − pF
transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
300
handbook, full pagewidth
h
FE
200
100
0
−2
10
−1
10
MBH724
VCE = 5 V
1
10 10
2
10
IC (mA)
3
Fig.2 DC current gain; typical values.
2001 Sep 10 4
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NXP Semiconductors Product data sheet
NPN general purpose double transistor BC847BV
Graphical information BC847BV
600
handbook, halfpage
h
FE
500
400
300
200
100
0
−1
10
VCE = 5 V.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.3 DC current gain; typical values.
(1)
(2)
(3)
110
10
2
IC (mA)
MHB971
1200
handbook, halfpage
V
BE
(mV)
MHB972
1000
800
600
(1)
(2)
400
(3)
200
3
10
0
−2
10
−1
10
110
10
2
IC (mA)
3
10
VCE = 5 V.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.4 Base-emitter voltage as a function of
collector current; typical values.
10
MHB973
2
IC (mA)
4
10
handbook, halfpage
V
CEsat
(mV)
3
10
2
10
10
−1
10
(1)
(2)
(3)
110
IC/IB = 20.
= 150 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.5 Collector-emitter saturation voltage as a
function of collector current; typical values.
1200
handbook, halfpage
V
BEsat
(mV)
MHB974
1000
800
(1)
(2)
600
(3)
400
200
3
10
0
−1
10
110
10
2
IC (mA)
3
10
IC/IB 20.
= −55 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.6 Base-emitter saturation voltage as a
function of collector current; typical values.
2001 Sep 10 5
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NXP Semiconductors Product data sheet
6
NPN general purpose double transistor BC847BV
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads SOT66
D
A
E
X
S
YS
pin 1 index
123
e
DIMENSIONS (mm are the original dimensions)
UNIT b
mm
A
0.6
0.5
0.27
0.17
p
cD
0.18
0.08
1
1.7
1.5
b
p
e
E
1.3
1.1
456
A
w M
A
0 1 2 mm
scale
e
H
L
1.0
e
1
E
1.7
0.5
1.5
0.3
0.1
p
w
0.1y0.1
H
E
detail X
c
L
p
OUTLINE
VERSION
SOT666
REFERENCES
IEC JEDEC EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
2001 Sep 10 6
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NXP Semiconductors Product data sheet
NPN general purpose double transistor BC847BV
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This doc ume nt contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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does not give any representations or warranties,
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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http://www.nxp.com/profile/terms, including those
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2001 Sep 10 7
60134) may cause permanent damage to
Page 8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were
made to the content, except for the legal definitions and disclaimers.
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed
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under patent- or other industri al or intellectual property right s.
Printed in The Netherlands 613514/01/pp8 Date of release: 2001 Sep 10 Document order number: 9397 750 08589
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