Philips BC848CF, BC848BF, BC847BF, BC847CF, BC846AF Datasheet
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DATA SH EET
Preliminary specification
Supersedes data of 1998 Nov 10
1999 May 18
DISCRETE SEMICONDUCTORS
BC846F; BC847F; BC848F series
NPN general purpose transistors
M3D425
1999 May 18 2
Philips Semiconductors Preliminary specification
NPN general purpose transistors BC846F; BC847F; BC848F series
FEATURES
• Power dissipation comparable to SOT23
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification, especially
in portable equipment.
DESCRIPTION
NPN transistor encapsulated in an ultra small SC-89
(SOT490) plastic SMD package.
PNP complements: BC856F, BC857F and BC858F series.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC846AF 1A BC847CF 1G
BC846BF 1B BC848AF 1J
BC847AF 1E BC848BF 1K
BC847BF 1F BC848CF 1L
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SC-89; SOT490) and
symbol.
handbook, halfpage
MAM410
1
2
3
12
Top view
3
1999 May 18 3
Philips Semiconductors Preliminary specification
NPN general purpose transistors BC846F; BC847F; BC848F series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC846AF; BC846BF − 80 V
BC847AF; BC847BF; BC847CF − 50 V
BC848AF; BC848BF; BC848CF − 30 V
V
CEO
collector-emitter voltage open base
BC846AF; BC846BF − 65 V
BC847AF; BC847BF; BC847CF − 45 V
BC848AF; BC848BF; BC848CF − 30 V
V
EBO
emitter-base voltage open collector − 5V
I
C
collector current (DC) − 100 mA
I
CM
peak collector current − 200 mA
I
BM
peak base current − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
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