Philips bc846t, bc847t DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D173
BC846T; BC847T series
NPN general purpose transistors
Product specification
Supersedes data of 1999 Apr 26
2000 Nov 15
Philips Semiconductors Product specification
NPN general purpose transistors BC846T; BC847T series
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purposeswitching and amplification, especially
in portable equipment.
DESCRIPTION
NPN general purpose transistor in an SC-75 (SOT416)
plastic package.
PNP complements: BC856T; BC857T series.
MARKING
TYPE NUMBER MARKING CODE
BC846AT 1A
BC846BT 1B
BC847AT 1E
BC847BT 1F
BC847CT 1G
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
12
Top view
3
1
Fig.1 Simplified outline (SC-75; SOT416) and
symbol.
3
2
MAM348
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC846AT; BC846BT − 80 V
BC847AT; BC847BT; BC847CT − 50 V
V
CEO
collector-emitter voltage open base
BC846AT; BC846BT − 65 V
BC847AT; BC847BT; BC847CT − 45 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 150 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2000 Nov 15 2
Philips Semiconductors Product specification
NPN general purpose transistors BC846T; BC847T series
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
C
e
f
T
F noise figure V
thermal resistance from junction to ambient in free air; note 1 833 K/W
collector-base cut-off current VCB=30V; IE=0 −−15 nA
V
=30V; IE= 0; Tj= 150 °C −−5µA
CB
emitter cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=2mA
BC846AT; BC847AT 110 − 220
BC846BT; BC847BT 200 − 450
BC847CT 420 − 800
collector-emitter saturation
voltage
IC= 10 mA; IB= 0.5 mA; −−200 mV
I
= 100 mA; IB= 5 mA; note 1 −−400 mV
C
base-emitter voltage IC= 2 mA; VCE= 5 V 580 − 700 mV
I
= 10 mA; VCE=5V −−770 mV
C
collector capacitance VCB= 10 V; f = 1 MHz; IE=ie=0 −−1.5 pF
emitter capacitance VEB= 0.5 V; f = 1 MHz; IC=ic=0 − 11 − pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 −−MHz
=5V; IC= 200 µA; RS=2kΩ;
CE
−−10 dB
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2000 Nov 15 3
Philips Semiconductors Product specification
NPN general purpose transistors BC846T; BC847T series
GRAPHICAL INFORMATION BC847AT
400
handbook, halfpage
h
FE
300
200
100
0
−1
10
VCE=5V.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
Fig.2 DC current gain; typical values.
MGT723
(1)
(2)
(3)
11010
2103
IC (mA)
1200
handbook, halfpage
V
BE
(mV)
1000
800
(1)
(2)
600
400
(3)
200
0
−1
10
11010
2103
IC (mA)
VCE=5V.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MGT724
3
10
handbook, halfpage
V
CEsat
(mV)
2
10
10
−1
10
(1)
(2)
(3)
11010
MGT725
2103
IC (mA)
IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
1200
handbook, halfpage
V
BEsat
(mV)
1000
(1)
800
(2)
600
(3)
400
200
0
−1
10
11010
2103
IC (mA)
IC/IB= 10.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
MGT726
2000 Nov 15 4
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