Philips BC846S Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ndbook, halfpage
MBD128
BC846S
NPN general purpose double
transistor
Product specification
Supersedes data of 1999 May 28
1999 Sep 01
Philips Semiconductors Product specification
NPN general purpose double transistor BC846S
FEATURES
• Two transistors in one package
• Reduces number of components and board space
• No mutual interference between the transistors.
handbook, halfpage
56
4
645
APPLICATIONS
• General purpose switching and small signal
amplification.
132
Top view
MAM340
TR1
132
TR2
DESCRIPTION
NPN double transistor in an SC-88 (SOT363) plastic six
lead package.
Fig.1 Simplified outline (SC-88) and symbol.
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
MARKING
TYPE NUMBER MARKING CODE
BC846S 4Ft
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 80 V
collector-emitter voltage open base − 65 V
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
total power dissipation T
≤ 25 °C − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
1999 Sep 01 2
Philips Semiconductors Product specification
NPN general purpose double transistor BC846S
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
thermal resistance from junction to ambient note 1 416 K/W
collector cut-off current IE= 0; VCB=30V −−15 nA
I
= 0; VCB=30V; Tj= 150 °C −−5µA
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 2 mA; VCE= 5 V 110 −−
collector-emitter saturation
voltage
base-emitter saturation
IC= 10 mA; IB= 0.5 mA −−100 mV
I
= 100 mA; IB= 5 mA; note 1 −−300 mV
C
IC= 10 mA; IB= 0.5 mA − 770 − mV
voltage
collector capacitance IE=ie= 0; VCB=10V; f=1MHz −−1.5 pF
transition frequency IC= 10 mA; VCE=5V;
100 −−MHz
f = 100 MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Sep 01 3
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